M29F400FT55N3E2 vs M29F800FT55N3E2 Perbandingan
Perbandingan bersamaan detil M29F400FT55N3E2 dari Micron Technology dan M29F800FT55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | M29F400FT55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel) | NOR Flash |
| Density | 4 Mbit (512K x 8) | 8389 kbits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V (single supply) | 5 V |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | Top Boot Block |
| Paket | 44-SO (SOP-44) | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | 100,000 cycles per block (typical for family) |
| Data Retention | [DATA_NEEDED: Data Retention] | >20 years (typical for family) |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant (E suffix = lead-free/RoHS) |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Ready/Busy Output | — | Yes |