M29F400FT55N3E2 vs M29F800FT55N3E2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F400FT55N3E2 tarafından Micron Technology ve M29F800FT55N3E2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ Aktif
Özellik Karşılaştırması
| Parametre | M29F400FT55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash (Parallel) | NOR Flash |
| Density | 4 Mbit (512K x 8) | 8389 kbits |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V (single supply) | 5 V |
| Arayüz | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | Top Boot Block |
| Paket | 44-SO (SOP-44) | 48-TSOP I |
| Montaj Türü | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| İşletim Sıcaklığı | [DATA_NEEDED: Operating Temperature Range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | 100,000 cycles per block (typical for family) |
| Data Retention | [DATA_NEEDED: Data Retention] | >20 years (typical for family) |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL Seviyesi | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS Durumu | [DATA_NEEDED: RoHS Status] | Compliant (E suffix = lead-free/RoHS) |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Ready/Busy Output | — | Yes |