M29F800FB55M3E2 vs M29F800FT55M3E2 Perbandingan

Perbandingan bersamaan detil M29F800FB55M3E2 dari Micron Technology dan M29F800FT55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55M3E2 M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 ✓ Aktif
Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55M3E2 M29F800FT55M3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Parallel NOR Flash NOR Flash
Density 8 Mbit (8389 kbits) 8389 kbits
Organisasi 512K x 16 / 1M x 8 512K x 16 bit
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Bottom boot block —
Suhu Kerja -40C to +125C -40C to +125C
Automotive Qualification AEC-Q100 (Auto Grade 125C) —
Paket 44-pin SO (SOP) 44-SO (SOP)
Tipe Mounting Surface Mount Surface Mount
Program / Erase Embedded byte/word program and erase controller —
Number of Words 512 k —
Bits per Word 16 bits —
Status RoHS Compliant (E suffix, RoHS-compliant package) Compliant (E suffix)
Standard Packing Tray —
Family M29F 200/400/800 5V Parallel NOR Flash —
Ukuran Memori — 8 Mbit
Antarmuka — Parallel
Tegangan Pemuat — 5 V
Boot Block Location — Top boot block
Program/Erase Cycles — 100,000 per block
Program Algorithm — Embedded byte/word program
Erase Features — Erase suspend and resume
Standby Mode — Automatic standby, low power
Identification — Electronic signature

Spek dan Sumber

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