M29F800FB55N3F2 vs M29F800FB55N3E2 Perbandingan

Perbandingan bersamaan detil M29F800FB55N3F2 dari Micron Technology dan M29F800FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif
Micron Technology
M29F800FB55N3E2 M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55N3F2 M29F800FB55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Memory Density 8389 kbits (8 Mbit) —
Organisasi 1M x 8 / 512K x 16 Bottom boot (B suffix)
Tegangan Pemuat 5 V —
Access Time 55 ns 55 ns
Tipe Antarmuka Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
Suhu Kerja -40C to +125C Up to +125 C (Auto Grade 3 suffix)
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
Tipe Mounting Surface Mount Surface Mount (SMD/SMT)
Packaging Tape & Reel (T/R) —
Status RoHS Compliant (lead-free terminations) Compliant (E suffix)
Ukuran Memori — 8 Mbit (1 M x 8 / 512 K x 16)
Tipe Memori — NOR Flash, SLC, Parallel
Supply Voltage Min — 4.5 V
Supply Voltage Max — 5.5 V
Antarmuka — Parallel
Lebar Bus Data — 8-bit or 16-bit (BYTE# selectable)
Paket — 48-pin TSOP Type I (N suffix)
Packing — Tray (blank suffix)
Programming Operations — READ, ERASE, PROGRAM via command set
Write Protection — Block protection with lockable boot block
Status Output — RB# (Ready/Busy)

Spek dan Sumber

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