M29W064FB70N3F vs M29W064FT70N3E Perbandingan

Perbandingan bersamaan detil M29W064FB70N3F dari Micron Technology dan M29W064FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W064FB70N3F M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F Obsolete
Micron Technology
M29W064FT70N3E M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W064FB70N3F M29W064FT70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Aktif
Tipe Memori NOR Flash, Parallel NOR Flash (Parallel)
Density 64 Mbit 64 Mbit
Organisasi 8M x8 / 4M x16 8 Mb x8 or 4 Mb x16
Tegangan Pemuat 2.7 V to 3.6 V 2.7 V to 3.6 V
Access Time 70 ns 70 ns
Antarmuka Parallel, x8/x16 selectable (BYTE#) Parallel, CFI compliant
Boot Block Configuration Bottom boot block (FB) —
Suhu Kerja -40C to +125C -40C to +85C
Automotive Qualification AEC-Q100 qualified —
Paket 48-TSOP 48-TSOP
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TR suffix) —
Status Polling RY/BY# hardware pin + data polling —
Erase/Program Interface Command set (M29W family compatible) —
Status RoHS Compliant (F suffix) [DATA_NEEDED: RoHS compliance status]
Part Status Obsolete —
Boot Block Architecture — Top boot block (FT)
Programming Voltage — Single 3 V supply (no separate VPP required)
Erase/Program Method — Command-set page programming, block erase
Product Longevity Program — No
Program/Erase Cycles — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: active read supply current]
Standby Current — [DATA_NEEDED: standby current]

Spek dan Sumber

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