M29W800FT70ZA3SE vs M29W160EB80ZA3SE Perbandingan
Perbandingan bersamaan detil M29W800FT70ZA3SE dari Micron Technology dan M29W160EB80ZA3SE dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded
M29W800FT70ZA3SE ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29W800FT70ZA3SE | M29W160EB80ZA3SE |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Ukuran Memori | 8 Mbit | 16 Mbit (2M x8 / 1M x16) |
| Organisasi | 512K x 16 | 16 Mbit Boot Block, x8/x16 selectable |
| Technology | SLC | — |
| Access Time | 70 ns | 80 ns |
| Antarmuka | Parallel | Parallel (Byte-wide / Word-wide) |
| Tegangan Pemuat | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TFBGA (6x8 mm) | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Programming Interface | CFI command set | — |
| Boot Block Architecture | Top boot (FT = top boot block) | — |
| Density | 8 Mb | — |
| FBGA Code | [DATA_NEEDED: FBGA code] | — |
| Chipset Validation | N/A | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Pb-free (SE suffix) |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Packaging | — | Tape & Reel (TR) |
| Qualification | — | AEC-Q100 (automotive grade per datasheets.com listing) |
| Programming Supply | — | Single 3V supply for program, erase and read |
| Technology Family | — | M29W160EB (3rd generation M29W series) |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Erase Block Architecture | — | Boot block (parameter and main blocks) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |