MPC17531ATEP vs MPC17529EP Perbandingan
Perbandingan bersamaan detil MPC17531ATEP dari NXP Semiconductors dan MPC17529EP dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MPC17531ATEP - Dual H-Bridge Motor Driver, 8.6V, 700mA | NXP
MPC17531ATEP ⚠ Waktu Beli TerakhirNXP Semiconductors
MPC17529EP - 0.7A Dual H-Bridge Motor Driver | NXP | 24-QFN-EP
MPC17529EP ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MPC17531ATEP | MPC17529EP |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Motor Drivers | Motor Drivers |
| Status Lingkungan Hidup | Waktu Pembelian Terakhir | Aktif |
| Topologi | Dual monolithic H-Bridge | Dual H-Bridge |
| Jumlah Output | 1 or 2 H-Bridges | 2 (dual H-bridge) |
| Motor Type | DC brushed / bipolar stepper | Brushed DC, Bipolar Stepper |
| Load Supply Voltage (VM) | 2.0 V to 8.6 V | 2.0 V to 6.8 V |
| Logic Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 5.6 V |
| Continuous Output Current per Channel | 700 mA | — |
| Peak Output Current per Channel | 1.4 A | — |
| On-Resistance (typ per FET) | [DATA_NEEDED: Rdson typ] | — |
| PWM Switching Frequency | Up to 200 kHz | — |
| Control Interface | Parallel (4 input pins per bridge) | — |
| Shoot-Through Protection | Built-in (cross-conduction dead time) | Yes (built-in) |
| Charge Pump | Internal | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temp range] | — |
| Paket | 24-QFN-EP (HVQCCN) 4x4 mm | 24-QFN-EP (4x4 mm) with exposed thermal pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | — |
| Output Current (Continuous) | — | 0.7 A per bridge |
| Logic Interface | — | CMOS Parallel, 3.0 V/5.0 V compatible |
| Control Inputs | — | 4 (IN1, IN2, IN3, IN4) |
| On-chip Charge Pump | — | Yes (for high-side gate drive) |
| Undervoltage Shutdown | — | Yes |
| Junction Operating Temperature | — | -20 C to +150 C TJ |
| Process Technology | — | CMOS / Power MOSFET monolithic |