MRF5S19060NR1 vs MRF5S19060MR1 Perbandingan

Perbandingan bersamaan detil MRF5S19060NR1 dari NXP Semiconductors dan MRF5S19060MR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ Aktif
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRF5S19060NR1 MRF5S19060MR1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Transceivers MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Output Power (Average) 12 W —
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
Paket / Case TO-270 WB-4 (over-molded plastic, 4-lead) —
Gaya Mounting Surface Mount —
Configuration Single, Common-Source —
Application Base station / broadband commercial amplifier —
Jumlah Pin 5 —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP (formerly Freescale Semiconductor)
Part Number — MRF5S19060MR1
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
Paket — TO-270 WB-4 (Ceramic)
Tipe Mounting — Surface Mount / Flange Mount
Test Signal — 2 x N-CDMA
Level MSL — [DATA_NEEDED: MSL rating]
Operating Class — Class AB

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