MRF7S19100NBR1 vs MRF7S19100NR1 Perbandingan
Perbandingan bersamaan detil MRF7S19100NBR1 dari NXP Semiconductors dan MRF7S19100NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF7S19100NBR1 | MRF7S19100NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Paket / Case | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | — |
| Configuration | Single, N-Channel | Single, Common Source |
| Gaya Mounting | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| Status RoHS | compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead-Free | yes | — |
| Tipe Transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| Paket | — | TO-270 WB-4 (Case 1486-03) Plastic |
| Tipe Mounting | — | Surface Mount |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| Level MSL | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |