MRF7S19100NBR1 vs MRF7S19100NR1 مقایسه
مقایسه دقیق کنار به کنار MRF7S19100NBR1 توسط NXP Semiconductors و MRF7S19100NR1 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ فعالمقایسه مشخصات
| پارامتر | MRF7S19100NBR1 | MRF7S19100NR1 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| بسته‌بندی / کیس | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | — |
| Configuration | Single, N-Channel | Single, Common Source |
| سبک نصب | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| محدوده دمای کاری | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| وضعیت RoHS | compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead-Free | yes | — |
| نوع ترانزیستور | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| بسته‌بندی | — | TO-270 WB-4 (Case 1486-03) Plastic |
| نوع نصب | — | Surface Mount |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| سطح MSL | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |