MRF7S19170HSR3 vs MRF7S19100NBR1 Perbandingan
Perbandingan bersamaan detil MRF7S19170HSR3 dari NXP Semiconductors dan MRF7S19100NBR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | MRF7S19170HSR3 | MRF7S19100NBR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status (Rochester) | Active - Rochester Electronics LLC authorized stock | — |
| Tipe Transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | HV7 LDMOS | — |
| Frequency Band | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) | 1.93 GHz to 1.99 GHz |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Operating Drain Voltage | 28 V (typical) | — |
| Test Drain Current | 1.4 A | — |
| Output Power (Avg) | 50 W (W-CDMA) | — |
| Power Gain (typ) | 17.2 dB | — |
| Paket / Case | NI-880S (ceramic flange, bolt-down) | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount |
| Tipe Mounting | Chassis / Heatsink Mount (flange) | — |
| Operating Mode | Class AB / Class C | — |
| Modulation Supported | CDMA, W-CDMA, multi-carrier GSM, EDGE | — |
| Lead Finish | Ni-Au (lead-free compatible) | — |
| Status RoHS | Compliant (per NXP product page) | compliant (per NXP product page) |
| Part Number | — | MRF7S19100NBR1 |
| Device Type | — | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) |
| Test Frequency (typical) | — | 1.96 GHz |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | — | 65 V |
| Drain Operating Voltage (VDD) | — | 28 V (nominal) |
| Quiescent Drain Current (IDQ) | — | 1000 mA |
| Output Power (Pout, average) | — | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) |
| Power Gain (Gp, typical) | — | 17.5 dB |
| Drain Efficiency (typical) | — | [DATA_NEEDED: typical drain efficiency %] |
| Configuration | — | Single, N-Channel |
| Gaya Mounting | — | Surface Mount with copper ground flange (heatsink bolted) |
| JEDEC Terminal Code | — | JESD-30: R-PDFM-F4 |
| Terminal Finish (JESD-609) | — | e3 (tin-lead reflow compatible per manufacturer data) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range C] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range C] |
| Lead-Free | — | yes |