MRF7S19170HSR3 vs MRF7S19100NBR1 موازنہ
تفصیلی ساتھ ساتھ موازنہ از MRF7S19170HSR3 بذریعہ NXP Semiconductors اور MRF7S19100NBR1 بذریعہ NXP Semiconductors. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ فعال
خصوصیات کا موازنہ
| پیرامیٹر | MRF7S19170HSR3 | MRF7S19100NBR1 |
|---|---|---|
| برانڈ | NXP Semiconductors | NXP Semiconductors |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status (Rochester) | Active - Rochester Electronics LLC authorized stock | — |
| ٹرانزسٹر کی قسم | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | HV7 LDMOS | — |
| Frequency Band | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) | 1.93 GHz to 1.99 GHz |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Operating Drain Voltage | 28 V (typical) | — |
| Test Drain Current | 1.4 A | — |
| Output Power (Avg) | 50 W (W-CDMA) | — |
| Power Gain (typ) | 17.2 dB | — |
| پیکیج / کیس | NI-880S (ceramic flange, bolt-down) | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount |
| ماؤنٹنگ ٹائپ | Chassis / Heatsink Mount (flange) | — |
| Operating Mode | Class AB / Class C | — |
| Modulation Supported | CDMA, W-CDMA, multi-carrier GSM, EDGE | — |
| Lead Finish | Ni-Au (lead-free compatible) | — |
| RoHS اسٹیٹس | Compliant (per NXP product page) | compliant (per NXP product page) |
| Part Number | — | MRF7S19100NBR1 |
| Device Type | — | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) |
| Test Frequency (typical) | — | 1.96 GHz |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | — | 65 V |
| Drain Operating Voltage (VDD) | — | 28 V (nominal) |
| Quiescent Drain Current (IDQ) | — | 1000 mA |
| Output Power (Pout, average) | — | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) |
| Power Gain (Gp, typical) | — | 17.5 dB |
| Drain Efficiency (typical) | — | [DATA_NEEDED: typical drain efficiency %] |
| Configuration | — | Single, N-Channel |
| ماؤنٹنگ اسٹائل | — | Surface Mount with copper ground flange (heatsink bolted) |
| JEDEC Terminal Code | — | JESD-30: R-PDFM-F4 |
| Terminal Finish (JESD-609) | — | e3 (tin-lead reflow compatible per manufacturer data) |
| آپریٹنگ درجہ حرارت رینج | — | [DATA_NEEDED: operating temperature range C] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range C] |
| Lead-Free | — | yes |