MRF7S19170HSR3 vs MRF7S19100NBR1 مقایسه

مقایسه دقیق کنار به کنار MRF7S19170HSR3 توسط NXP Semiconductors و MRF7S19100NBR1 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.

NXP Semiconductors
MRF7S19170HSR3 MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP

MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP

MRF7S19170HSR3 ✓ فعال
NXP Semiconductors
MRF7S19100NBR1 MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP

MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP

MRF7S19100NBR1 ✓ فعال

مقایسه مشخصات

پارامتر MRF7S19170HSR3 MRF7S19100NBR1
برند NXP Semiconductors NXP Semiconductors
دسته‌بندی MOSFETs MOSFETs
وضعیت چرخه عمر فعال فعال
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Part Status (Rochester) Active - Rochester Electronics LLC authorized stock —
نوع ترانزیستور LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology HV7 LDMOS —
Frequency Band 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) 1.93 GHz to 1.99 GHz
Test Frequency 1.99 GHz —
Drain-Source Voltage (Max) 65 V —
Operating Drain Voltage 28 V (typical) —
Test Drain Current 1.4 A —
Output Power (Avg) 50 W (W-CDMA) —
Power Gain (typ) 17.2 dB —
بسته‌بندی / کیس NI-880S (ceramic flange, bolt-down) TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount
نوع نصب Chassis / Heatsink Mount (flange) —
Operating Mode Class AB / Class C —
Modulation Supported CDMA, W-CDMA, multi-carrier GSM, EDGE —
Lead Finish Ni-Au (lead-free compatible) —
وضعیت RoHS Compliant (per NXP product page) compliant (per NXP product page)
Part Number — MRF7S19100NBR1
Device Type — RF Power MOSFET (N-Channel Enhancement-Mode Lateral)
Test Frequency (typical) — 1.96 GHz
Drain-Source Breakdown Voltage (V(BR)DSS, min) — 65 V
Drain Operating Voltage (VDD) — 28 V (nominal)
Quiescent Drain Current (IDQ) — 1000 mA
Output Power (Pout, average) — 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping)
Power Gain (Gp, typical) — 17.5 dB
Drain Efficiency (typical) — [DATA_NEEDED: typical drain efficiency %]
Configuration — Single, N-Channel
سبک نصب — Surface Mount with copper ground flange (heatsink bolted)
JEDEC Terminal Code — JESD-30: R-PDFM-F4
Terminal Finish (JESD-609) — e3 (tin-lead reflow compatible per manufacturer data)
محدوده دمای کاری — [DATA_NEEDED: operating temperature range C]
Storage Temperature Range — [DATA_NEEDED: storage temperature range C]
Lead-Free — yes

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