MRF8HP21130HSR3 vs MRF8S21200HR6 Perbandingan
Perbandingan bersamaan detil MRF8HP21130HSR3 dari NXP Semiconductors dan MRF8S21200HR6 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
MRF8HP21130HSR3 ✓ AktifNXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF8HP21130HSR3 | MRF8S21200HR6 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF8HP21130HSR3 | — |
| Device Type | Lateral N-Channel RF Power MOSFET | — |
| Application Band | 2110 - 2170 MHz (W-CDMA / LTE) | — |
| Drain Voltage (VDD) | 28 V | — |
| Output Power (Average, W-CDMA / LTE) | 28 W | — |
| Power Gain (typ.) | 14 dB | — |
| Drain Current (test condition) | 360 mA | — |
| Operating Frequency (f) | 2.17 GHz (max in band) | — |
| Architecture | In-package Doherty (two-stage) | — |
| Paket / Case | NI-780S-4 (air-cavity ceramic) | — |
| Gaya Mounting | Flange mount, screw-down | — |
| Bias Class | Class AB / Class C capable | — |
| Modulation Support | W-CDMA, LTE | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Suhu Kerja | -40C to +150C (junction) | — |
| Datasheet Document | MRF8HP21130H datasheet (NXP) | — |
| Tipe Transistor | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.4 A |
| Power Gain | — | 18.1 dB |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| Tipe Mounting | — | Surface Mount (NI-1230 ceramic flange) |
| Paket | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| Status RoHS | — | Compliant |