MRF8HP21130HSR3 vs MRF8S21200HR6 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8HP21130HSR3 sa pamamagitan ng NXP Semiconductors at MRF8S21200HR6 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8HP21130HSR3 MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP

MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP

MRF8HP21130HSR3 ✓ Nakahanda
NXP Semiconductors
MRF8S21200HR6 MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station

MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station

MRF8S21200HR6 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8HP21130HSR3 MRF8S21200HR6
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Part Number MRF8HP21130HSR3 —
Device Type Lateral N-Channel RF Power MOSFET —
Application Band 2110 - 2170 MHz (W-CDMA / LTE) —
Drain Voltage (VDD) 28 V —
Output Power (Average, W-CDMA / LTE) 28 W —
Power Gain (typ.) 14 dB —
Drain Current (test condition) 360 mA —
Operating Frequency (f) 2.17 GHz (max in band) —
Architecture In-package Doherty (two-stage) —
Packhaging / Kaso NI-780S-4 (air-cavity ceramic) —
Style ng Pagpapasok Flange mount, screw-down —
Bias Class Class AB / Class C capable —
Modulation Support W-CDMA, LTE —
RoHS Compliant —
Lead-Free Yes —
Temperature na Operasyon -40C to +150C (junction) —
Datasheet Document MRF8HP21130H datasheet (NXP) —
Uri ng Transistor — LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET
Frequency — 2.11 GHz to 2.17 GHz (2110-2170 MHz)
Test Voltage — 28 V
Test Current — 1.4 A
Power Gain — 18.1 dB
Output Power (Average) — 48 W
Drain-Source Voltage (Max) — 65 V
Configuration — Common Source, 2 elements
Case Connection — Source
Uri ng Pagpapasok — Surface Mount (NI-1230 ceramic flange)
Packhaging — NI-1230
Application — W-CDMA, LTE base station power amplifiers
Class of Operation — Class AB, Class C
Surface Mount — Yes
Tindminan RoHS — Compliant

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