MRF8HP21130HSR3 vs MRF8S21200HR6 比較
詳細並排比較 MRF8HP21130HSR3 由 NXP Semiconductors 與 MRF8S21200HR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 啟用中規格比較
| 參數 | MRF8HP21130HSR3 | MRF8S21200HR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF8HP21130HSR3 | — |
| Device Type | Lateral N-Channel RF Power MOSFET | — |
| Application Band | 2110 - 2170 MHz (W-CDMA / LTE) | — |
| Drain Voltage (VDD) | 28 V | — |
| Output Power (Average, W-CDMA / LTE) | 28 W | — |
| Power Gain (typ.) | 14 dB | — |
| Drain Current (test condition) | 360 mA | — |
| Operating Frequency (f) | 2.17 GHz (max in band) | — |
| Architecture | In-package Doherty (two-stage) | — |
| 封裝 / 外殼 | NI-780S-4 (air-cavity ceramic) | — |
| 安裝方式 | Flange mount, screw-down | — |
| Bias Class | Class AB / Class C capable | — |
| Modulation Support | W-CDMA, LTE | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 工作溫度 | -40C to +150C (junction) | — |
| Datasheet Document | MRF8HP21130H datasheet (NXP) | — |
| 電晶體類型 | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.4 A |
| Power Gain | — | 18.1 dB |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| 安裝類型 | — | Surface Mount (NI-1230 ceramic flange) |
| 封裝 | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| RoHS 狀態 | — | Compliant |