MT40A1G8AG-062E vs H5AN8G4NAFR-RDC Perbandingan
Perbandingan bersamaan detil MT40A1G8AG-062E dari Micron Technology dan H5AN8G4NAFR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A1G8AG-062E | H5AN8G4NAFR-RDC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 1G x 8 | 1G x 4 |
| Antarmuka | Parallel | Synchronous, differential clock CK_t/CK_c |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | — |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Paket | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free) |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Density | — | 8Gb |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| CAS Latency (CL) | — | [DATA_NEEDED: CL for -RDC bin] |
| Bank Architecture | — | DDR4 bank-group architecture |
| Bebas Halogen | — | Yes |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Manufacturer | — | SK hynix |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |