MT40A1G8AG-062E vs H5AN8G4NAFR-RDC 比較
詳細並排比較 MT40A1G8AG-062E 由 Micron Technology 與 H5AN8G4NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8AG-062E | H5AN8G4NAFR-RDC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 1G x 8 | 1G x 4 |
| 介面 | Parallel | Synchronous, differential clock CK_t/CK_c |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | — |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封裝 | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free) |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Density | — | 8Gb |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| CAS Latency (CL) | — | [DATA_NEEDED: CL for -RDC bin] |
| Bank Architecture | — | DDR4 bank-group architecture |
| 無鹵素 | — | Yes |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Manufacturer | — | SK hynix |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |