MT40A1G8SA-062E vs K4A8G085WB-BICR Perbandingan
Perbandingan bersamaan detil MT40A1G8SA-062E dari Micron Technology dan K4A8G085WB-BICR dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A1G8SA-062E | K4A8G085WB-BICR |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 MT/s (DDR4-3200) | 2400 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| Suhu Kerja | 0C to +95C (CT range; IT: -40C to +95C) | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| Paket | 78-ball FBGA (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Fitur | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| Tegangan Pemuat | — | 1.2 V (VDD/VDDQ) |
| Number of Banks | — | 16 |
| Refresh Cycles | — | 8192 |
| Jumlah Pin | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |