MT40A1G8SA-062E vs K4A8G085WB-BICR 对比
详细并排对比 MT40A1G8SA-062E 出自 Micron Technology 和 K4A8G085WB-BICR 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中规格对比
| 参数 | MT40A1G8SA-062E | K4A8G085WB-BICR |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.05 | $4.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 存储组织 | 1G x 8 | 1G x 8 |
| 数据速率 | 3200 MT/s (DDR4-3200) | 2400 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| 工作温度 | 0C to +95C (CT range; IT: -40C to +95C) | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| 封装 | 78-ball FBGA (7.5 x 11 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 特性 | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| 电源电压 | — | 1.2 V (VDD/VDDQ) |
| Number of Banks | — | 16 |
| Refresh Cycles | — | 8192 |
| 引脚数量 | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| 工作温度范围 | — | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |