MT40A256M16GE-075E:B vs K4A4G165WD-BCPB Perbandingan
Perbandingan bersamaan detil MT40A256M16GE-075E:B dari Micron Technology dan K4A4G165WD-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | MT40A256M16GE-075E:B | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $3,95 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Laju Data | 2666 MT/s (DDR4-2666) | 2133 MT/s |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | Self-refresh supported (TCSR per DDR4 standard features) |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Paket | 96-FBGA (9 x 14 mm) | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range for standard grade] | [DATA_NEEDED: operating temperature range] |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Antarmuka | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Status RoHS | — | Compliant (lead-free suffix) |