MT40A2G8AG-062E vs H5ANAG8NAMR-UHC Perbandingan
Perbandingan bersamaan detil MT40A2G8AG-062E dari Micron Technology dan H5ANAG8NAMR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A2G8AG-062E | H5ANAG8NAMR-UHC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Organisasi | 2G x 8 | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Paket | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (lead-free FBGA package) |
| Die Revision | AG (current generation) | — |
| Manufacturer | — | SK Hynix |
| Laju Data | — | DDR4-2400 (2400 MT/s) |
| Tegangan Pemuat | — | 1.2 V |
| Antarmuka | — | Parallel, DDR4 |
| Bank Group Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | Self-refresh and auto-refresh (DDR4) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Applications | — | Data storage, firmware boot, industrial controllers, computing modules |