MT40A512M16JY-083E vs MT40A512M16LY-075:E Perbandingan
Perbandingan bersamaan detil MT40A512M16JY-083E dari Micron Technology dan MT40A512M16LY-075:E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ AktifMicron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A512M16JY-083E | MT40A512M16LY-075:E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (Automotive) | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organisasi | 512M x 16 | — |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | 1.33 GHz |
| Laju Data | 2400 MT/s (speed grade -083E) | 2666 MT/s |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| Paket | 96-FBGA (8 x 14 mm) | 96-FBGA (7.5x13.5mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| Bebas Halogen | Compliant | — |
| Country of Origin | China | — |
| Ukuran Memori | — | 8 Gbit (512M x 16) |
| Latensi CAS | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Antarmuka | — | Parallel |
| Rentang Suhu Kerja | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |