MT40A512M16JY-083E vs MT40A512M16LY-075:E 比較
詳細並排比較 MT40A512M16JY-083E 由 Micron Technology 與 MT40A512M16LY-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 啟用中規格比較
| 參數 | MT40A512M16JY-083E | MT40A512M16LY-075:E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (Automotive) | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | — |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | 1.33 GHz |
| 資料速率 | 2400 MT/s (speed grade -083E) | 2666 MT/s |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| 封裝 | 96-FBGA (8 x 14 mm) | 96-FBGA (7.5x13.5mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| 無鹵素 | Compliant | — |
| Country of Origin | China | — |
| 記憶體容量 | — | 8 Gbit (512M x 16) |
| CAS 延遲 | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| 介面 | — | Parallel |
| 工作溫度範圍 | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |