MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MPN: MT40A512M16LY-075:E ✓ AktifMT40A512M16LY-075:E Ringkasan
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V vs 1.5V for DDR3), reducing power dissipation and enabling higher density modules.
Key features include on-die, internal, adjustable VREFDQ generation for improved signal integrity, 1.2V pseudo open-drain I/O for compatibility with modern controllers, and a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (DTC), CRC function, and data mask function, ensuring reliable operation in high-speed systems.
The MT40A512M16LY-075:E is designed for high-bandwidth applications such as enterprise servers, networking equipment, and high-performance computing. Its 16-bit data bus and 8Gb density make it suitable for memory modules (DIMMs) and embedded systems requiring large memory capacity. The device is compliant with JEDEC DDR4 standards and is RoHS compliant.
When designing with this component, ensure proper decoupling of VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the pins. The VPP supply must be clean and within 2.5V ±250mV. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
Alternatif penggantian untuk MT40A512M16LY-075:E — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian MT40A512M16LY-075:E (sama faktor bentuk dan footprint) — berbeda di dalam Package, Data Rate, Memory Size, Clock Frequency, Features.
MT40A512M16JY-075E
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT40A512M16LY-062E
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT40A512M16TB-062E
✅ Drop-InKontak untuk harga
Lihat Datasheet →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4A8G165WB-BCWE
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →MT40A512M16LY-075:E Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit (512M x 16) |
| Laju Data | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| Latensi CAS | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Antarmuka | Parallel |
| Paket | 96-FBGA (7.5x13.5mm) |
| Rentang Suhu Kerja | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| Tipe Mounting | Surface Mount |
Konfigurasi Pin MT40A512M16LY-075:E
| Pin produk A1 | VDD — Power supply (1.2V) |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | VSS — Ground |
| Pin produk B1 | DQ1 — Data input/output 1 |
| Pin produk B2 | VDDQ — I/O power supply (1.2V) |
| Pin produk B3 | DQ2 — Data input/output 2 |
| Pin produk C1 | DQ3 — Data input/output 3 |
| Pin produk C2 | VSSQ — I/O ground |
| Pin produk C3 | DQ4 — Data input/output 4 |
| Pin produk D1 | DQ5 — Data input/output 5 |
| Pin produk D2 | VDD — Power supply (1.2V) |
| Pin produk D3 | DQ6 — Data input/output 6 |
| Pin produk E1 | DQ7 — Data input/output 7 |
| Pin produk E2 | VSS — Ground |
| Pin produk E3 | DQS0 — Data strobe 0 |
| Pin produk F1 | DQS0# — Data strobe 0 complement |
| Pin produk F2 | VDDQ — I/O power supply (1.2V) |
| Pin produk F3 | DM0 — Data mask 0 |
| Pin produk G1 | A0 — Address input 0 |
| Pin produk G2 | A1 — Address input 1 |
| Pin produk G3 | A2 — Address input 2 |
| Pin produk H1 | A3 — Address input 3 |
| Pin produk H2 | A4 — Address input 4 |
| Pin produk H3 | A5 — Address input 5 |
| Pin produk J1 | A6 — Address input 6 |
| Pin produk J2 | A7 — Address input 7 |
| Pin produk J3 | A8 — Address input 8 |
| Pin produk K1 | A9 — Address input 9 |
| Pin produk K2 | A10/AP — Address input 10 / Auto-precharge |
| Pin produk K3 | A11 — Address input 11 |
| Pin produk L1 | A12 — Address input 12 |
| Pin produk L2 | A13 — Address input 13 |
| Pin produk L3 | A14 — Address input 14 |
| Pin produk M1 | A15 — Address input 15 |
| Pin produk M2 | BA0 — Bank address 0 |
| Pin produk M3 | BA1 — Bank address 1 |
| Pin produk N1 | BA2 — Bank address 2 |
| Pin produk N2 | BG0 — Bank group 0 |
| Pin produk N3 | BG1 — Bank group 1 |
| Pin produk P1 | CK — Clock input |
| Pin produk P2 | CK# — Clock input complement |
| Pin produk P3 | CKE — Clock enable |
| Pin produk R1 | CS# — Chip select |
| Pin produk R2 | ODT — On-die termination |
| Pin produk R3 | RAS# — Row address strobe |
| Pin produk T1 | CAS# — Column address strobe |
| Pin produk T2 | WE# — Write enable |
| Pin produk T3 | RESET# — Reset |
| Pin produk U1 | VPP — Wordline boost supply (2.5V) |
| Pin produk U2 | VDD — Power supply (1.2V) |
| Pin produk U3 | VSS — Ground |
Aplikasi Umum
MT40A512M16LY-075:E cocok untuk 6 aplikasis: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
Direkomendasikan
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
Direkomendasikan
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
Direkomendasikan
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
Direkomendasikan
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
Direkomendasikan
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk MT40A512M16LY-075:E — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
Diferensiator Kunci
- Active lifecycle status (vsMT40A512M16LY-062E)
- Lower speed grade for cost optimization (vsAS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility (vsK4A8G165WB-BCWE)
Catatan Desain
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Informasi Konformitas
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
