MT40A512M16LY-075:E vs MT40A512M16JY-083E Perbandingan
Perbandingan bersamaan detil MT40A512M16LY-075:E dari Micron Technology dan MT40A512M16JY-083E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ AktifMicron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A512M16LY-075:E | MT40A512M16JY-083E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Ukuran Memori | 8 Gbit (512M x 16) | — |
| Laju Data | 2666 MT/s | 2400 MT/s (speed grade -083E) |
| Clock Frequency | 1.33 GHz | 1.2 GHz (tCK = 0.83 ns) |
| Latensi CAS | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Antarmuka | Parallel | — |
| Paket | 96-FBGA (7.5x13.5mm) | 96-FBGA (8 x 14 mm) |
| Rentang Suhu Kerja | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Density | — | 8 Gbit |
| Organisasi | — | 512M x 16 |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| Bebas Halogen | — | Compliant |
| Country of Origin | — | China |