NT5CC256M16DP-DI vs MT40A512M16JY-07EAIT:B Perbandingan
Perbandingan bersamaan detil NT5CC256M16DP-DI dari Nanya Technology dan MT40A512M16JY-07EAIT:B dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | NT5CC256M16DP-DI | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | 512M x 16 |
| Tegangan Pemuat | 1.35V | — |
| Laju Data | 1600 Mbps/pin (800MHz) | 2666 MT/s |
| Paket | VFBGA-96 | 96-FBGA (8x14) |
| Rentang Suhu Kerja | -40°C to +95°C (industrial) | -40°C to +105°C (AIT grade) |
| Latensi CAS | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| Antarmuka | Differential clock (CK, CK#) | Parallel |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Ukuran Memori | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |