UCC21550ADWR vs UCC21550BDWR Perbandingan

Perbandingan bersamaan detil UCC21550ADWR dari Texas Instruments dan UCC21550BDWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum UCC21550ADWR UCC21550BDWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Number of Channels 2 (dual) —
Configuration Dual low-side, dual high-side, or half-bridge —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling Capacitive coupling, reinforced isolation
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI > 125 V/ns —
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable —
Disable Function Yes (DISABLE pin) Yes
Driven Devices Power MOSFET, SiC, GaN, IGBT Power MOSFET, SiC MOSFET, GaN FET, IGBT
Junction Temperature Range -40C to +150C -40 C to +150 C
Paket 16-SOIC (DW) 16-SOIC (DW)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Konfigurasi Output — Dual-channel (dual low-side, dual high-side, or half-bridge)
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes

Spek dan Sumber

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