UCC21550ADWR vs UCC21550BDWR Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng UCC21550ADWR sa pamamagitan ng Texas Instruments at UCC21550BDWR sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Texas Instruments
UCC21550ADWR UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR ✓ Nakahanda
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro UCC21550ADWR UCC21550BDWR
Brand Texas Instruments Texas Instruments
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Number of Channels 2 (dual) —
Configuration Dual low-side, dual high-side, or half-bridge —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling Capacitive coupling, reinforced isolation
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI > 125 V/ns —
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable —
Disable Function Yes (DISABLE pin) Yes
Driven Devices Power MOSFET, SiC, GaN, IGBT Power MOSFET, SiC MOSFET, GaN FET, IGBT
Junction Temperature Range -40C to +150C -40 C to +150 C
Packhaging 16-SOIC (DW) 16-SOIC (DW)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant [DATA_NEEDED: RoHS status]
Output Kumpigurasyon — Dual-channel (dual low-side, dual high-side, or half-bridge)
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes

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