VNQ660SPTR-E vs VNQ660SP-E Perbandingan

Perbandingan bersamaan detil VNQ660SPTR-E dari STMicroelectronics dan VNQ660SP-E dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum VNQ660SPTR-E VNQ660SP-E
Merek STMicroelectronics STMicroelectronics
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Quad-channel high-side solid-state relay —
Technology ST VIPower M0-3 (vertical DMOS) STMicroelectronics VIPower M0-3
Number of Channels 4 4 (Quad)
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) 40 mOhm per channel (typical)
Input Compatibility CMOS logic-level inputs —
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
Suhu Kerja -40 C to +125 C [DATA_NEEDED: operating temperature range]
Paket PowerSO-10 with exposed bottom pad PowerSO-10 (Exposed Bottom Pad)
Tipe Mounting Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
Status RoHS Compliant Compliant
Topologi — High-Side Switch (Solid State Relay)
Supply Voltage (Vcc) — 6 V to 36 V
Output Current per Channel — 6 A continuous
Output Current (Peak) — [DATA_NEEDED: peak current per channel]
Input Type — CMOS-compatible logic inputs
Off-State Open-Load Detection — Yes
Undervoltage Shutdown — Yes
Overvoltage Shutdown / Clamp — Yes
Penutupan Panas — Yes
Current Limitation — Yes
Waktu Jeda Menyalakan — 40 us (typ)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon