VNQ660SPTR-E vs VNQ660SP-E 比較

詳細並排比較 VNQ660SPTR-E 由 STMicroelectronics 與 VNQ660SP-E 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 啟用中

規格比較

參數 VNQ660SPTR-E VNQ660SP-E
品牌 STMicroelectronics STMicroelectronics
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Quad-channel high-side solid-state relay —
Technology ST VIPower M0-3 (vertical DMOS) STMicroelectronics VIPower M0-3
Number of Channels 4 4 (Quad)
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) 40 mOhm per channel (typical)
Input Compatibility CMOS logic-level inputs —
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
工作溫度 -40 C to +125 C [DATA_NEEDED: operating temperature range]
封裝 PowerSO-10 with exposed bottom pad PowerSO-10 (Exposed Bottom Pad)
安裝類型 Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS 狀態 Compliant Compliant
拓撲 — High-Side Switch (Solid State Relay)
Supply Voltage (Vcc) — 6 V to 36 V
Output Current per Channel — 6 A continuous
Output Current (Peak) — [DATA_NEEDED: peak current per channel]
Input Type — CMOS-compatible logic inputs
Off-State Open-Load Detection — Yes
Undervoltage Shutdown — Yes
Overvoltage Shutdown / Clamp — Yes
過熱關機 — Yes
Current Limitation — Yes
導通延遲時間 — 40 us (typ)

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