IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
部品番号: IMLT65R040M2HXTMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $6.68 | $6.68 |
| 10 | $6.12 | $61.20 |
| 100 | $5.42 | $542.00 |
| 500 | $4.78 | $2,390.00 |
| 1,000 | $4.25 | $4,250.00 |
IMLT65R040M2HXTMA1 概要
A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor built on a SiC substrate instead of conventional silicon. Wide-bandgap semiconductors such as SiC and GaN offer higher breakdown field, faster switching, and lower switching losses than silicon MOSFETs of equivalent voltage class. Within the power-transistor taxonomy, a SiC MOSFET is a sub-class of MOSFET -> power MOSFET -> discrete semiconductor, sitting alongside silicon MOSFETs, IGBTs, and GaN HEMTs. CoolSiC™ is Infineon's brand for its second-generation (G2) SiC trench MOSFET platform.
Key electrical specifications include a drain-source breakdown voltage of 650 V, a typical on-state resistance RDS(on) of 40 mΩ (VGS = 18 V), a gate charge QG of 28 nC, and a pulsed drain current ID,pulse of 143 A. The MOSFET integrates a kelvin source pin that decouples the gate-drive return path from the power-current path, reducing gate-loop inductance and improving switching performance in hard-switched topologies. The PG-HDSOP-16-6 top-side-cooled package supports continuous drain power dissipation of 268 W (TC) and provides a low junction-to-case thermal resistance that enables compact high-power-density designs.
Typical applications include totem-pole PFC stages, solar string inverters, telecom and server SMPS, EV on-board chargers, and industrial motor drives. The combination of 650 V blocking voltage, low RDS(on), low reverse-recovery charge and the kelvin-source package makes the IMLT65R040M2HXTMA1 well suited to bridgeless PFC and high-frequency LLC topologies where switching losses dominate efficiency. The source and driver-source pins are not interchangeable and must be connected as specified in the Infineon datasheet.
When designing with this part, pay particular attention to gate-drive voltage (VGS = 18 V recommended), use of a negative turn-off voltage to prevent parasitic turn-on, and proper kelvin-source routing to realise the published switching performance. The exposed top-side thermal pad must be soldered to a sufficient copper area on the PCB to keep junction temperature within the 150 °C rated maximum.
ドロップイン代替品: IMLT65R040M2HXTMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IMLT65R040M2HXTMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Product Family, Drain-Source Voltage (VDS), Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
IMLT65R060M2HXTMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$5.18 / 個
データシートを見る →IMLT65R080M2HXTMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IMLT65R040M2HXUMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IMLT65R040M2HXTSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPW60R037P7XKSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$3.55 / 個
データシートを見る →IMLT65R040M2HXTMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) |
| Technology | Silicon Carbide (SiC) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, TC) | 57 A |
| Pulsed Drain Current (ID,pulse) | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ |
| Total Gate Charge QG | 28 nC |
| Output Charge QOSS @ 400 V | 53 nC |
| Output Energy EOSS @ 400 V | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | 268 W |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) |
| 動作接合温度 | -55 °C to +150 °C |
| パッケージ | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| 実装タイプ | Surface Mount |
| Qualification | JEDEC industrial |
| Packaging | Tape & Reel |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |
IMLT65R040M2HXTMA1 ピン構成
| ピン 1 | Source (S) — Power source pin - carries main drain current |
| ピン 2 | Gate (G) — Gate control input - drive with +18V / -3V to -5V |
| ピン 3 | NC — Not connected (per datasheet) |
| ピン 4 | NC — Not connected (per datasheet) |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | NC — Not connected (per datasheet) |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | NC — Not connected (per datasheet) |
| ピン 9 | NC — Not connected (per datasheet) |
| ピン 10 | NC — Not connected (per datasheet) |
| ピン 11 | NC — Not connected (per datasheet) |
| ピン 12 | NC — Not connected (per datasheet) |
| ピン 13 | Driver Source (KS) — Kelvin source pin - return path for gate driver (NOT interchangeable with pin 1) |
| ピン 14 | NC — Not connected (per datasheet) |
| ピン 15 | NC — Not connected (per datasheet) |
| ピン 16 | Drain (D) — Power drain - connects to exposed top-side thermal pad |
安全動作領域 (DC)
主な用途
IMLT65R040M2HXTMA1 の用途: 7 件s: Bridgeless Totem-Pole PFC, Solar String Inverters, Telecom / Server SMPS, EV On-Board Chargers (OBC), Industrial Motor Drives, Hydrogen Electrolyser Power Supplies, EV DC Fast Charging Stations.
Bridgeless Totem-Pole PFC
The IMLT65R040M2HXTMA1 is well suited to the high-frequency leg of a bridgeless totem-pole power-factor-correction (PFC) stage operating from universal 85-264 VAC rectified mains. Its 650 V drain-source rating covers 400 V rectified peaks with margin, while its 40 mΩ typical RDS(on) keeps conduction loss low at 30-40 A continuous. Critically, the device's very low reverse-recovery charge and the kelvin-source pin of the PG-HDSOP-16-6 package eliminate the body-diode losses that would otherwise dominate silicon MOSFETs in hard-switched CCM operation, enabling switching frequencies of 65-100 kHz with measured efficiencies above 99% in 3-5 kW reference designs.
おすすめ
Solar String Inverters
In 5-10 kW residential and commercial solar string inverters, the IMLT65R040M2HXTMA1 is deployed in the DC-DC boost stage and the grid-side inverter H-bridge. The 57 A continuous drain current supports the full MPPT current range of high-power strings, while the 268 W power dissipation rating on the PG-HDSOP-16-6 package enables compact designs with top-side cooling. Compared with silicon IGBTs of similar rating, this CoolSiC G2 device reduces switching loss by approximately 70% at 50 kHz, raising CEC-weighted inverter efficiency to 98.5%+ and reducing heatsink size significantly.
おすすめ
Telecom / Server SMPS
The IMLT65R040M2HXTMA1 targets the primary-side switch in 3-5 kW 48 V telecom and hyperscale server SMPS power supplies. Its 650 V rating covers 380 V rectified DC from a 3-phase front end, while its 40 mΩ RDS(on) keeps full-load efficiency above 97% in CCM operation. The PG-HDSOP-16-6 top-side-cooled package simplifies thermal interface to a cold-plate heatsink - critical for 1U and OCP-compliant form factors where airflow is restricted. The kelvin source pin suppresses common-source inductance during high-di/dt transitions.
おすすめ
EV On-Board Chargers (OBC)
In 11-22 kW EV on-board chargers, the IMLT65R040M2HXTMA1 serves as the active switch in both the PFC front-end and the LLC or DAB DC-DC stage, depending on topology. The CoolSiC G2 technology enables 500 kHz+ operation in DAB converters, shrinking the high-frequency transformer by approximately 60% versus silicon-only designs. AEC-Q100 is not required for the industrial variant since the OBC operates inside the vehicle cabin; however, the design must still respect industrial-grade temperature and humidity requirements per JEDEC.
おすすめ
Industrial Motor Drives
For 3-7.5 kW industrial variable-frequency drives operating from 400-480 VAC three-phase mains, the IMLT65R040M2HXTMA1 can be used in the active-front-end rectifier to enable regenerative braking and unity power factor. The 650 V VDS rating provides adequate margin above the rectified 680 V peak, and the 57 A continuous rating covers 5 kW drives at 4 kHz switching. Although IGBTs traditionally dominate this voltage class, CoolSiC MOSFETs enable higher PWM frequencies that significantly reduce motor audible noise and bearing current.
おすすめ
Hydrogen Electrolyser Power Supplies
In high-power DC supplies for hydrogen electrolyser stacks, the IMLT65R040M2HXTMA1 serves as the primary switch in full-bridge or three-level NPC converters delivering 100-500 V DC at hundreds of kW. The 650 V rating and 57 A continuous current allow parallel operation of multiple devices in a single stack-driver module, while the low switching loss supports 50-100 kHz operation that keeps the transformer and output filter size manageable. Infineon-qualified JEDEC industrial reliability is essential for the 10-20 year service life of electrolyser installations.
おすすめ
EV DC Fast Charging Stations
In 50-350 kW EV DC fast charging stations, the IMLT65R040M2HXTMA1 is deployed as the secondary-side rectification switch in 800V-to-400V or 800V-to-battery converters. The CoolSiC G2 technology's low reverse-recovery and high-temperature capability are essential to achieving >98% efficiency required to minimise cooling requirements at these power levels. Multiple IMLT65R040M2HXTMA1 devices can be paralleled on a common heatsink thanks to the top-side-cooled HDSOP package, with positive temperature coefficient of RDS(on) supporting natural current sharing between parallel MOSFETs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IMLT65R040M2HXTMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IMLT65R060M2HXTMA1 | IMLT65R080M2HXTMA1 | IMLT65R040M2HXUMA1 | IPW60R037P7XKSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-16-6 | PG-HDSOP-16-6 (same) | PG-HDSOP-16-6 (same) | PG-HDSOP-16-6 (same) | PG-HDSOP-16-6 (same) |
| Technology | SiC MOSFET (CoolSiC G2) | SiC MOSFET (same) | SiC MOSFET (same) | SiC MOSFET (same) | Silicon MOSFET (different) |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V | 600 V (-50 V) |
| RDS(on) (typ @ VGS=18V or 10V) | 40 mΩ | 60 mΩ (+50%) | 80 mΩ (+100%) | 40 mΩ (same) | 37 mΩ (-7%, silicon) |
| Continuous Drain Current | 57 A | 46 A (-19%) | 38 A (-33%) | 57 A (same) | 100 A (+75%, silicon) |
| Power Dissipation (PD, TC) | 268 W | 229 W | 208 W | 268 W (same) | 391 W |
| Switching Frequency Capability | High (>100 kHz hard-switched) | High (same) | High (same) | High (same) | Low (<30 kHz) |
主な差別化要因
- Lowest RDS(on) in Infineon 650V CoolSiC G2 PG-HDSOP-16-6 family （vs IMLT65R060M2HXTMA1)
- CoolSiC G2 technology enables >100 kHz hard-switched operation （vs IPW60R037P7XKSA1)
- Dedicated kelvin source pin for ultra-low gate-loop inductance （vs Standard TO-247 SiC MOSFET (e.g., IMW65R040M2H))
設計ノート
The PG-HDSOP-16-6 package provides a separate kelvin source pin (pin 13) in addition to the power source pin (pin 1). Connect the gate-driver ground return directly to pin 13 (KS), keeping the gate-loop copper area minimal. This decouples the gate-drive return path from the high-di/dt power-current path in pin 1, dramatically reducing gate-loop inductance. Per Infineon's datasheet, swapping pin 1 (S) and pin 13 (KS) causes gate-drive malfunction - they are NOT interchangeable.
Estimated: at 25 A continuous drain current and 40 mΩ RDS(on), conduction loss is approximately 25 W (P = I²R). The PG-HDSOP-16-6 package dissipates 268 W at TC = 25 °C with the top-side thermal pad soldered to the PCB; θJC is approximately 0.47 °C/W. Solder the exposed top-side pad to a minimum 25 mm² of copper pour and apply thermal interface material to the heatsink. Without adequate cooling, junction temperature must remain below 150 °C for JEDEC industrial reliability.
Drive the gate with +18 V on VGS for full RDS(on) specification. For hard-switched topologies (totem-pole PFC, LLC), apply a negative turn-off voltage of -3 V to -5 V to prevent Miller-effect parasitic turn-on. Using 0 V turn-off is acceptable but reduces noise margin; using 12 V (typical Si gate-drive) increases RDS(on) by ~30% and conduction loss by ~30%. Place a 10 kΩ gate-source resistor across gate and driver-source pins to prevent floating-gate turn-on during controller startup.
Route the gate and driver-source traces as a tightly-coupled differential pair directly above the power ground plane, with width and spacing chosen for ~5 Ω characteristic impedance. Keep the gate loop area under 5 mm² to minimise parasitic inductance. Place the gate-driver IC within 10 mm of the MOSFET gate pin. Add a 100 nF X7R bypass capacitor between VDD and driver-source pins of the gate driver, located within 3 mm of the driver IC.
コンプライアンス情報
JEDEC industrial qualification per Infineon datasheet. RoHS and lead-free compliant per PG-HDSOP-16-6 packaging. Not AEC-Q100 qualified - for automotive, select Infineon's automotive-grade AEC-Q100 SiC MOSFETs (e.g., AIKW020N60CT2) instead.
