MOSFET
製品 (1294)
IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon
The Infineon IPN70R2K0P7SATMA1 is a 700 V N-channel CoolMOS P7 superjunction power MOSFET delivering 3 A continuous drain current (Tc) and 6 W power dissipation in a compact PG-SOT223 surface-mount package, with a maximum on-resistance of 2.0 Ω. It is part of Infineon's CoolMOS P7 family optimized for low-power switched-mode power supplies (SMPS), targeting consumer, lighting, and auxiliary power designs where high efficiency and small form factor matter most. A superjunction MOSFET is a high-voltage power transistor that uses alternating P/N epitaxial layers to achieve a much lower on-resistance per unit area than conventional planar MOSFETs at the same breakdown voltage. In the power-converter hierarchy, this MOSFET sits inside the primary-side switch position of AC-DC flyback, buck, or quasi-resonant converters, ultimately enabling the SMPS -> AC-DC/DC-DC converter -> power management IC taxonomy that defines offline power design. The CoolMOS P7 family specifically targets the 600-700 V class where efficiency, thermal behavior, and EMI must be balanced for cost-sensitive platforms. Key specifications include 700 V drain-source breakdown voltage (VDS), 3 A continuous drain current at case temperature (TC = 25 °C), a typical R_DS(on) of approximately 2.0 Ω at VGS = 10 V, and an integrated ESD protection diode. The PG-SOT223 package provides a drain tab that can be soldered onto a DPAK-compatible footprint, enabling a cost-effective drop-in replacement for DPAK with comparable thermal performance and a smaller PCB area. The device also features a fast body diode suitable for hard-switching and quasi-resonant topologies. The CoolMOS P7 superjunction technology uses a charge-balance structure to reduce conduction and switching losses simultaneously. Compared to previous-generation CoolMOS CE and CPA families, the P7 series improves switching loss, gate charge (Qg), and EMI behavior, while simplifying gate-drive design with tightly controlled threshold voltage. This makes the IPN70R2K0P7S suitable for high-frequency operation above 100 kHz in compact adapters. Typical applications include low-power AC-DC flyback converters (such as smartphone chargers, tablet adapters, and set-top box power supplies), LED lighting drivers, standby and auxiliary power supplies in white goods and industrial controls, and low-power SMPS modules where the 700 V rating provides ample margin across universal-mains input (85-265 VAC). The combination of low Qg, low Eoss, and a robust integrated body diode also supports quasi-resonant and valley-switching topologies. When designing with this device, ensure that VGS is driven to 10 V for full R_DS(on) performance; using 12 V is acceptable but must remain within the VGS(max) limit. Heatsinking of the PG-SOT223 tab is critical at higher continuous currents - the thermal pad must be soldered to a sufficiently large copper pour to keep junction temperature below 150 °C.
IPN70R360P7SATMA1 - 700V 360mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPN70R360P7SATMA1 is a 700 V N-channel CoolMOS™ P7 superjunction (SJ) power MOSFET rated at 12.5 A continuous drain current (Tc) and 360 mΩ maximum on-state resistance, packaged in a surface-mount PG-SOT223 with a 3-pin (2+Tab) configuration. It is qualified to 7.2 W maximum power dissipation (Tc) and is designed as a cost-effective drop-in alternative to DPAK for slim low-power SMPS designs. A superjunction MOSFET (SJ MOSFET) is a power-MOSFET architecture that achieves very low on-state resistance per unit silicon area by alternating P- and N-doped epitaxial columns inside the drift region. CoolMOS™ P7 is Infineon's 700 V/800 V superjunction platform optimized for low-power switched-mode power supplies; within the broader taxonomy it sits as N-channel power MOSFET -> discrete semiconductor -> power semiconductor. The P7 family targets charger, adapter, LED-driver, and auxiliary-supply applications, and is engineered to deliver strong efficiency, fast switching, and high body-diode ruggedness at a competitive price point. Key features of the IPN70R360P7SATMA1 include integrated ESD protection (HBM class 1C), very low Qrr and Qg for reduced switching loss, a low Vth (typ. 3.0 V at Vgs=10 V), and very tight Rds(on) distribution. The SOT-223 plastic package is footprint-compatible with DPAK pads in many layouts and provides a thermal pad that can be soldered to a copper pour for heat-sinking. Combined, these features enable slim, high-efficiency flyback, PFC, and buck topologies up to the 12.5 A continuous / 700 V envelope. Technically, the part uses Infineon's charge-compensation principle: a deep-trench or multi-epi process creates lateral depletion regions that let the device sustain 700 V across a much thinner, lower-resistance drift layer than a conventional planar MOSFET. This yields the 360 mΩ Rds(on) at Vgs=10 V and at the same time keeps the figures of merit (FOMs = Rds(on) × Qg and Rds(on) × Qoss) low, which is essential for high-frequency SMPS designs. The internal body diode is designed for hard-commutation robustness in CCM PFC and active-clamp flyback stages. Typical applications are low-power SMPS adapters and chargers, LED lighting drivers, auxiliary power supplies in white goods and industrial equipment, and PFC front stages. Designers choose it where 700 V breakdown, 12.5 A continuous current, and a small SMD footprint are needed at a competitive cost. When designing with this device, pay attention to gate-drive voltage: the P7 platform is fully enhanced at Vgs=10 V, but 12 V is recommended for lowest Rds(on). The SOT-223 tab is the drain connection, so copper-area layout on the tab directly determines steady-state thermal performance and must be sized for the application's dissipation budget. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical SOT-223 layout/thermal design notes that go beyond the manufacturer datasheet.
IPN70R600P7SATMA1 - 700V 600mΩ CoolMOS P7 N-MOSFET | Infineon
The Infineon IPN70R600P7SATMA1 is a 700V N-channel CoolMOS P7 Superjunction power MOSFET in a surface-mount PG-SOT223 (3-pin + tab) package, rated for 8.5A continuous drain current at Tc and 6.9W power dissipation at Tc. It features an ultra-low on-state resistance of 600mΩ max at 25°C and is built on Infineon's P7 Superjunction technology, which combines the fast-switching benefits of a superjunction structure with an excellent price/performance ratio. A CoolMOS power MOSFET is a high-voltage N-channel enhancement-mode transistor built using a Superjunction (SJ) structure that places alternating N- and P-doped pillars inside the drift region. This pillar arrangement breaks the classical silicon limit on Rds(on) × area, so a CoolMOS device achieves far lower on-resistance per die area than a conventional planar MOSFET of the same voltage class. CoolMOS P7 is the 700V/800V consumer-optimized generation tuned for high efficiency, easy design-in and low EMI in switched-mode power supplies. Key features include a 700V drain-source breakdown voltage, 600mΩ maximum Rds(on) at Vgs=10V, an integrated Zener-protected gate for ESD robustness, and a low gate charge that supports high-frequency switching. The technology meets the highest efficiency standards (for example 80 PLUS requirements in ATX/PC silver-box designs) and supports high power density, enabling customers to design very slim form-factor adapters, chargers and open-frame SMPS units. Typical applications include flyback and quasi-resonant flyback converters in smartphone chargers, laptop adapters, TV standby and auxiliary power supplies, LED lighting drivers, and industrial auxiliary SMPS. The PG-SOT223 footprint is footprint-compatible with industry-standard SOT-223 N-channel MOSFETs, simplifying both new designs and retrofit replacements on existing 700V switcher boards. When designing with this device, observe the 700V BVdss rating with adequate derating for repetitive avalanche from the transformer's leakage inductance, and respect the PG-SOT223 RθJA thermal budget of approximately 156 C/W on the standard JEDEC 1s0p test board. Drive the gate with a 10V Vgs to reach the published 600mΩ Rds(on) curve, and use a small external gate-source resistor if paralleled-device gate ringing is a concern.
IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ω N-MOSFET | Infineon
The Infineon IPN80R1K2P7ATMA1 is an 800 V N-channel power MOSFET from the CoolMOS P7 superjunction family, rated at 4.5 A continuous drain current (Tc), 1200 mΩ maximum RDS(on), and 6.8 W maximum power dissipation in a 3-pin (2 + tab) SOT-223 surface-mount package. It targets low-to-medium power SMPS applications where designers need the high blocking voltage and low conduction losses typical of superjunction technology in a compact, easy-to-handle outline. A superjunction MOSFET (SJ-MOSFET) is a power MOSFET architecture that achieves a much higher figure-of-merit (low RDS(on) × Qg) than conventional planar or trench MOSFETs by stacking alternating P- and N-doped drift regions. This places the IPN80R1K2P7ATMA1 inside the hierarchy: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7 family → discrete semiconductors. CoolMOS P7 is Infineon's mainstream 500 V–950 V superjunction generation optimized for ease-of-use, low gate charge, and rugged body-diode reverse-recovery performance. Key specifications include an 800 V VDSS rating that exceeds typical 700 V industrial bus voltages and provides generous margin for rectified 230 VAC mains, an integrated ESD-protected gate, a low RDS(on) of 1200 mΩ max at VGS = 10 V, and a thermally efficient SOT-223 package with the tab acting as the drain connection. The P7 family is engineered for low switching losses and high body-diode ruggedness, which simplifies or eliminates snubber circuitry in hard-switching topologies. Typical applications include auxiliary and standby power supplies for white goods and industrial equipment, LED lighting drivers, smart metering, e-bike chargers, and low-power adapters. The 800 V rating and integrated ESD gate make the device especially well suited to cost-sensitive flyback converters operating directly from rectified mains. When designing with this part, observe the SOT-223 PCB layout: pins 1 (gate), 2 (drain tab + tab pin), and 3 (source) must all be soldered, with the drain tab providing both electrical contact and the primary thermal path. Keep the gate drive below the 20 V VGS absolute maximum and provide adequate copper area on the drain tab to stay within SOA at full 4.5 A load.
IPN80R1K4P7ATMA1 - 800V 4A CoolMOS P7 MOSFET | Infineon
The Infineon IPN80R1K4P7ATMA1 is an N-channel 800V CoolMOS P7 superjunction power MOSFET rated for 4A continuous drain current (Tc) and 1200 mOhm maximum static drain-source on-resistance, housed in a surface-mount PG-SOT223 package. It belongs to the 500V-950V CoolMOS P7 family targeting low-power switched-mode power supply designs where best-in-class efficiency, thermal performance and ease-of-use are required. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in power conversion topologies. The CoolMOS P7 family is built on Infineon's superjunction technology, refined over 18 years, which replaces the conventional planar DMOS structure with a deep-trench, charge-compensated drift region. This architecture collapses the historical trade-off between breakdown voltage and on-resistance, allowing the device to achieve very low RDS(on) per unit silicon area. Within the broader power-management taxonomy, MOSFETs sit alongside IGBTs as the workhorse discrete switches for AC-DC, DC-DC, and PFC stages. Key features include a 1200 mOhm maximum RDS(on) at VGS = 10V, a 4A continuous drain current rating at case temperature, and 7W power dissipation capability. The PG-SOT223 surface-mount package offers a thermal pad that simplifies PCB heatsinking while keeping the device footprint compact. The CoolMOS P7 technology also delivers low gate charge, fast switching, and intrinsic body diode with good reverse-recovery behaviour. The P7 series is optimised for hard- and soft-switching topologies including flyback, forward, and PFC boost stages. Its low specific on-resistance and reduced switching losses support higher switching frequencies, allowing designers to shrink magnetic components and improve power density. The wide 500V-950V class coverage makes the family applicable to universal-input mains designs (85-265VAC rectified to ~375V bus). Typical applications include smartphone and tablet chargers, notebook adapters, LED lighting drivers, auxiliary power supplies for white goods, and industrial SMPS modules. The 800V drain rating provides comfortable margin above typical 400V PFC bus voltages seen in European mains designs. When designing with this part, ensure the gate drive voltage reaches 10V for full RDS(on) specification and pay attention to creepage and clearance between drain pad and adjacent traces - the SOT223 tab is electrically connected to the drain. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single decision-ready reference for selecting the IPN80R1K4P7ATMA1.
IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon
The Infineon IPN80R4K5P7ATMA1 is an 800 V N-channel superjunction power MOSFET from the CoolMOS P7 family, rated for 1.5 A continuous drain current (Tc) and 6 W power dissipation in a surface-mount PG-SOT223 package with a 4.5 ohm maximum on-resistance at VGS = 10 V. Designed as an industrial-grade 800 V MOSFET, the part combines Infineon's over 18 years of superjunction technology expertise with state-of-the-art ease-of-use, providing best-in-class Figure-of-Merit and a low gate charge that simplifies gate-drive design. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in switched-mode power supplies (SMPS), motor drives, and lighting ballasts. The 800 V CoolMOS P7 sits within the discrete semiconductor hierarchy as: power MOSFET -> N-channel MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> CoolMOS family. Its superjunction (SJ) architecture replaces the conventional planar drift region with alternating P/N pillars, breaking the silicon limit on R DS(on) * area and reducing conduction loss by roughly 30-40 % versus planar 800 V predecessors. Key features include a 4.5 ohm maximum R DS(on) at VGS = 10 V, integrated Zener-protected gate for ESD robustness, and an intrinsic fast body diode that reduces reverse-recovery loss in hard-switched topologies. The SOT223 footprint supports high-density PCB layouts and a tab pin that doubles as a thermal pad for PCB copper heat-spreading, eliminating the need for an external heatsink in many low-power designs. Typical applications for the IPN80R4K5P7ATMA1 include flyback converters in auxiliary power supplies for white goods and industrial SMPS, low-power chargers, LED lighting drivers, and primary-side switches in adapters. Its 800 V drain rating provides ample derating margin for universal-input (85-265 V AC) PFC-front-end or quasi-resonant flyback converters, where avalanche ruggedness and dynamic R DS(on) stability matter most. When designing with this device, observe VGS(th) (typically 3 V) to ensure logic-level gate drives reach full enhancement, and minimize parasitic source inductance for clean switching waveforms. The PG-SOT223 thermal pad must be soldered to a copper pour of at least 1 cm² to keep Tj below 125 °C in continuous operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon
The Infineon IPN95R1K2P7ATMA1 is a 950 V N-channel power MOSFET from the CoolMOS P7 super-junction family, rated for 6 A continuous drain current and 1200 mOhm maximum on-resistance, housed in a surface-mount SOT-223-3 (PG-SOT223) package. It targets low-power switched-mode power supply (SMPS) applications and is the 950 V extension of Infineon's 500 V-950 V CoolMOS P7 platform. A super-junction MOSFET is a high-voltage power-FET architecture that uses alternating P/N epitaxial columns to deplete the drift region, dramatically reducing on-resistance per unit area compared with conventional planar MOSFETs. CoolMOS P7 is the seventh generation of Infineon's super-junction platform, designed for best-in-class efficiency in consumer and industrial high-voltage converters, while the 950 V rating provides extra margin against lightning-induced surges, inductive ringing, and unstable rectified mains. Key features include 950 V drain-to-source breakdown (V_DSS), 1.2 Ohm max R_DS(on) at V_GS = 10 V, 6 A continuous drain current at case temperature, 7 W power dissipation at T_C, and an integrated body diode suitable for quasi-resonant and flyback topologies. The SOT-223-3 footprint gives engineers a through-hole-style thermal pad in a surface-mount form factor, easing PCB layout versus DPAK alternatives. Architecturally, the device combines a high-cell-density super-junction drift region with a low-loss gate structure. The result is one of the lowest figure-of-merit (R_DS(on) x Q_G) values in the 950 V class, which translates directly into lower conduction and switching losses. The optimized body-diode reverse recovery makes the part tolerant of hard-switching and quasi-resonant topologies. Typical applications include auxiliary power supplies for white goods and home appliances, industrial SMPS, LED lighting drivers, e-bike and e-scooter chargers, and 400 V to 800 V battery management contactor drive. Designers benefit from a 950 V breakdown voltage that absorbs the inductive kickback of poorly clamped flyback transformers. When designing with this part, place the source tab on a copper pad of at least 50 mm^2 to keep the junction temperature within the safe operating area at full load, and use a 10 V gate drive for the lowest R_DS(on). Gate-source resistance of 10-100 kOhm prevents floating-gate turn-on during start-up. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, including a same-package comparison and SOA interpretation for SOT-223 thermal budgeting.
IPN95R2K0P7ATMA1 - 950V N-Channel CoolMOS P7 | Infineon
The Infineon IPN95R2K0P7ATMA1 is a 950V N-channel super-junction power MOSFET from the CoolMOS P7 family, rated for 4 A continuous drain current (Tc) and 2000 mOhm maximum on-resistance, housed in a 3-pin (2+tab) PG-SOT223 surface-mount package. This device targets low-to-medium power switched-mode power supply (SMPS) applications where 950V blocking voltage enables universal-input PFC and quasi-resonant flyback topologies without an external cascode arrangement. A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts energy by modulating current flow between its drain and source terminals under gate drive. Super-junction (SJ) MOSFETs such as the CoolMOS P7 family replace the conventional planar DMOS drift region with alternating P/N epitaxial columns that simultaneously reduce on-resistance per unit area and shrink gate charge, yielding figures of merit that far exceed those of standard 900V-1000V planar MOSFETs. The technology hierarchy is: power MOSFET -> super-junction MOSFET -> high-voltage MOSFET -> discrete semiconductor. Key differentiating specifications include a maximum drain-source voltage VDS of 950V, continuous drain current ID of 4 A at case temperature (Tc), pulsed drain current (IDM, avalanche and pulsed conditions not specified in provided data, see [DATA_NEEDED]), and a maximum static power dissipation of 7 W (Tc). The PG-SOT223 package provides a low thermal resistance path through the central tab to a copper pour on the PCB, enabling efficient heat extraction in a compact SOT-223 footprint measuring approximately 6.5 mm x 3.5 mm. Typical applications include low-power SMPS adapters, auxiliary power supplies for white goods and industrial equipment, LED lighting drivers, smart-meter power rails, and 5V/12V/19V flyback converters fed directly from rectified 230V/110V AC mains. The 950V rating provides substantial design margin for surge events on 230V rectified rails (peak 325V) and supports quasi-resonant flyback topologies that clamp leakage-energy spikes below 950V. When designing with this part, ensure the gate is driven to at least 10V for full enhancement into the rated 2000 mOhm R_DS(on). Place a 10-100 kohm gate-source resistor to suppress unintended turn-on from dv/dt-induced Miller current, and route the gate drive return to the source pad directly to minimize common-source inductance.
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
The Infineon IPN95R3K7P7ATMA1 is an N-channel power MOSFET from the CoolMOS P7 super-junction family, rated at 950 V drain-source voltage, 2.0 A continuous drain current (Tc) and 6 W power dissipation, housed in a surface-mount PG-SOT223 (3-pin + tab) package. It combines Infineon's 950 V super-junction technology with optimized low-power SMPS targeting, delivering a typical on-state resistance of 3700 mOhm at VGS=10V and best-in-class switching performance for the 950 V class. A power MOSFET is a voltage-controlled semiconductor switch used to commutate currents in power conversion circuits. The CoolMOS P7 series specifically targets high-voltage, low-power switch-mode power supplies (SMPS) and replaces conventional high-voltage MOSFETs with a super-junction structure that dramatically reduces on-state resistance and gate charge per unit area, enabling higher efficiency and smaller magnetics at 950 V operating points. Key differentiating features include an integrated Zener-protected gate (ESD ruggedness improvement), a very low reverse-recovery charge of the body diode, an ultra-wide SOA region, and high dv/dt ruggedness. These traits make the IPN95R3K7P7ATMA1 suited to quasi-resonant flyback and isolated buck topologies where avalanche energy and EMI behavior must be controlled. Architecturally, the device uses Infineon's P7 super-junction charge-balance concept, which arranges deep P-columns under the source to deplete the drift region under reverse bias. This results in a much thinner, lightly doped drift layer for the same breakdown voltage, reducing RDS(on)*A figure of merit versus standard 950 V planar MOSFETs. Typical applications include low-power SMPS adapters (e.g. 5-15 W auxiliary supplies), LED lighting drivers with universal mains input, smart-meter auxiliary rails, and industrial auxiliary supplies operating directly from rectified 400 V or 480 V AC bus voltages. The wide VDS margin of 950 V provides significant design headroom for lightning surge and reflected-voltage transients in flyback converters. When designing with this part, ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification and respect the linear derating of ID with temperature. The exposed tab on SOT-223 must be soldered to a copper pour of at least 25 mm^2 to keep junction temperature within safe limits during continuous conduction. This page synthesizes distributor pricing, parametric comparison with same-package alternatives, application context, and design considerations not all present in any single vendor datasheet.
IPP022N12NM6AKSA1 - 120V 2.2mΩ OptiMOS 6 N-MOSFET | Infineon
The Infineon IPP022N12NM6AKSA1 is an N-channel power MOSFET built on Infineon's OptiMOS 6 120V technology platform, housed in a through-hole PG-TO220-3-1 package. It is rated for 120 V VDS, 29 A continuous drain current at 25°C ambient (203 A pulsed at 25°C case), and a maximum on-resistance of 2.2 mΩ, making it well-suited for high-current, low-loss switching. The AKSA1 suffix denotes a specific orderable tube-packaged variant for high-volume manufacturing. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or chop current in power conversion circuits. MOSFETs sit within the discrete semiconductor hierarchy as a sub-category of transistors, alongside BJTs and IGBTs, and are the workhorse building block of synchronous rectifiers, motor drives, and hot-swap controllers. OptiMOS 6 is Infineon's sixth-generation 100-150V trench MOSFET platform optimized for lowest figure-of-merit (RDS(on) × Qg) to minimize conduction and switching losses simultaneously. Key features include a typical gate charge of approximately 105 nC, low gate threshold voltage optimized for standard 10 V drive, an intrinsic fast body diode suitable for bridge topologies, and avalanche-rated ruggedness. The TO-220 package offers industry-standard through-hole mounting and an exposed metal tab for direct attachment to a heatsink or chassis, supporting power dissipation up to 395 W at 25°C case temperature with proper thermal management. The OptiMOS 6 technology employs an advanced trench cell architecture with optimized field-plate design, achieving superior switching performance compared to planar MOSFETs of equivalent RDS(on). The lower gate charge and reduced output capacitance enable higher-frequency operation in switched-mode power supplies, reducing the size of magnetics and output filters. Typical applications include high-efficiency server and telecom switched-mode power supplies (SMPS), brushless DC (BLDC) motor drives, solar inverters, battery management systems for e-mobility, synchronous rectification stages, and high-current power tools. The 120V rating provides ample margin for 48V telecom bus, 60V battery, and industrial 96V rectified bus applications. When designing with this device, prioritize minimizing parasitic source inductance in the gate-drive loop to avoid dv/dt-induced turn-on. Use a gate-source resistor of 10-100 Ω to dampen ringing and ensure the heatsink is sized to keep junction temperature below 150°C under worst-case continuous load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not typically consolidated in the manufacturer datasheet alone.
IPP037N08N3GXKSA1 - 80V 100A 3.7mΩ OptiMOS 3 MOSFET | Infineon
The Infineon IPP037N08N3GXKSA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 3 technology, rated for 80 V drain-source voltage and 100 A continuous drain current (at Tc) in a through-hole PG-TO220-3 package. It features a maximum on-state resistance (RDS(on)) of 3.75 mΩ, low gate charge, and 214 W power dissipation (at Tc), positioning it as a benchmark for high-current, low-voltage synchronous rectification and motor-drive switching. The suffix 'GXKSA1' denotes the tape-and-reel packing option supplied in tubes to distributors. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and amplify signals in power electronics. The N-channel enhancement-mode MOSFET uses a positive gate-source voltage to create a conductive channel between drain and source. In the broader device taxonomy, the IPP037N08N3GXKSA1 sits at: power MOSFET -> discrete MOSFET -> discrete semiconductor -> power conversion IC ecosystem. OptiMOS™ 3 represents Infineon's third-generation trench MOSFET platform, optimized for low RDS(on) × gate charge (FOM) at 80-300 V voltage classes. Key differentiating features include industry-leading figure-of-merit (RDS(on) × Qg) for high-frequency switching, low thermal resistance through the TO-220 package, and avalanche-rated ruggedness. The 3.75 mΩ on-resistance enables <2% conduction loss at 50 A continuous operation, while the TO-220 through-hole form factor supports bolted heatsink mounting for high-power industrial designs. The drive voltage is specified at 6 V minimum and 10 V maximum RDS(on) test condition. Typical applications for the IPP037N08N3GXKSA1 span server and telecom power supplies (as the synchronous rectifier in 48 V buck and LLC converters), solar micro-inverters (high-frequency switching leg), electric-vehicle onboard chargers and DC-DC stages, motor-drive H-bridges for industrial automation, and uninterruptible power supplies (UPS). Its low RDS(on) at 10 V VGS minimizes conduction loss, while low Qg reduces driver loss at switching frequencies up to several hundred kHz. When designing with this part, pay close attention to gate-drive voltage levels. The 3.75 mΩ RDS(on) is guaranteed at VGS = 10 V; at VGS = 6 V the on-resistance is higher. Use a dedicated gate driver IC or bootstrap supply to maintain a clean 10 V drive rail, especially when the device is used as a high-side switch in a half-bridge topology. Thermal management via the TO-220 tab and heatsink compound is critical for sustained 100 A operation. This page synthesizes distributor stock, drop-in alternatives within the OptiMOS™ 3 family, and practical design notes that complement the Infineon datasheet. Cross-references to pin-compatible same-package MOSFETs from Infineon's portfolio help engineers manage sourcing and second-source qualification.
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
The Infineon IPP045N10N3GXKSA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated at 100 V VDS and 4.5 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, and housed in a TO-220-3 (PG-TO220-3) through-hole package. It delivers continuous drain current of 100 A at T<sub>C</sub> = 25 °C (per DigiKey listing) and supports pulsed currents up to 137 A at 25 °C, with a power dissipation of 214 W at T<sub>C</sub> = 25 °C. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that uses an insulated gate to modulate current flow between drain and source terminals. MOSFETs occupy the transistor hierarchy as: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor -> active electronic component. Within power-electronics systems, MOSFETs sit below wide-bandgap devices (GaN, SiC) and above bipolar junction transistors in switching-frequency and efficiency rankings. They are the workhorse of switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages. The IPP045N10N3GXKSA1's headline figures - 100 V breakdown, 4.5 mΩ on-resistance, and a 100 A continuous rating - are enabled by OptiMOS 3 trench-gate technology, which Infineon claims cuts R<sub>DS(on)</sub> by ~30% versus prior generations. A typical gate threshold (V<sub>GS(th)</sub>) sits around 3.5 V, fully enhanced at the standard 10 V drive. The TO-220-3 package provides a low thermal-resistance path to an external heatsink, which is mandatory for high-current operation. Architecture is a planar-style trench FET optimised for low figure-of-merit (R<sub>DS(on)</sub> × Q<sub>G</sub>) at 100 V, targeting high-frequency SMPS where switching loss dominates. The low gate charge (refer to the manufacturer datasheet for V<sub>GS</sub>-specific curves) enables fast transitions with reduced driver loss. Body-diode reverse-recovery characteristics are tuned for bridge topologies used in telecom and server power conversion. Typical applications include primary-side switches in telecom and server SMPS, synchronous rectification in 48 V bus converters, solar inverters, motor-drive H-bridges, and automotive 12 V/24 V high-current load switches. The 100 V rating gives useful headroom for 48 V nominal telecom rails and industrial bus voltages. When designing with this part, calculate worst-case conduction loss: P = I² × R<sub>DS(on)</sub> × R<sub>θJA</sub> temperature-correction factor. At 50 A continuous in a TO-220 with a small clip-on heatsink, junction temperature can approach the 175 °C limit; verify thermal margin before derating transient load events. This page synthesises distributor pricing, verified drop-in alternatives, and practical thermal notes that the manufacturer datasheet alone does not provide.
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon IPP069N20NM6AKSA1 is a 200V N-channel OptiMOS 6 power MOSFET delivering 136A continuous drain current (Tc) in a TO-220-3 (PG-TO220-3-1) through-hole package, with a maximum on-resistance of 6.9 mΩ at 10V VGS. The device belongs to Infineon's OptiMOS 6 200V family, which the manufacturer advertises as offering up to 42% lower RDS(on) versus the previous generation. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate structure (in this case, the industry-standard trench MOSFET) to modulate current flow between drain and source terminals. N-channel power MOSFETs such as the IPP069N20NM6AKSA1 are the workhorse devices of switched-mode power conversion, where they sit inside the broader taxonomy of discrete semiconductors and serve as the primary switching element in DC-DC converters, motor drives, and battery management systems. Within the Infineon OptiMOS family, the 200V class targets telecom, solar, and industrial bus applications. The headline specifications are 200V VDS, 6.9 mΩ typical RDS(on) at VGS=10V, 136A continuous drain current at 25°C case, and 300W power dissipation at Tc=25°C. The device is rated for avalanche operation and is qualified for repetitive hard-switching topologies where low gate charge (Qg) and low output capacitance (Coss) directly translate to reduced switching losses. Architecturally, the IPP069N20NM6AKSA1 uses Infineon's latest-generation OptiMOS 6 trench cell, which optimizes the figure-of-merit RDS(on) x Qg. The low RDS(on) at high current (15.3A continuous at TA with 3.8W dissipation) is supported by a robust thermal pad that allows direct PCB mounting with minimal heatsinking for moderate loads. Typical applications include solar inverters, telecom DC-DC bricks, server and telecom OR-ing, battery management systems (BMS) for e-mobility, industrial motor drives, and high-power synchronous rectification in SMPS. The TO-220-3 through-hole package is preferred for hand-built prototypes, replacement of legacy devices, and any application where a discrete heatsink is required. When designing with the IPP069N20NM6AKSA1, ensure that the gate driver can supply at least 10V VGS to fully enhance the device, and consider a dedicated gate-resistor network to control dV/dt and mitigate ringing. The TO-220-3 tab is electrically connected to the drain - the heatsink must therefore be isolated or the drain circuit must tolerate the heatsink being at drain potential. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, with all data cross-referenced to DigiKey, Mouser, Arrow, LCSC, and the official Infineon product page.
IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon
The Infineon IPP075N15N3GXKSA1 is an N-channel OptiMOS 3 power MOSFET rated at 150V drain-source voltage, 100A continuous drain current (at Tc), and 300W power dissipation (at Tc), housed in a through-hole PG-TO220-3 (TO-220) package. It achieves a maximum on-state resistance RDS(on) of 7.5 mOhm, providing a 40% reduction in RDS(on) versus the prior generation and a 45% improvement in Figure of Merit (FOM). The OptiMOS 3 platform is Infineon's third-generation medium-voltage power MOSFET family, optimized for the lowest conduction and switching losses in its class. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in power conversion circuits such as DC-DC converters, motor drives, synchronous rectifiers, and load switches. It sits in the power-semiconductor hierarchy between BJTs/IGBTs (lower switching speed, simpler drive) and emerging wide-bandgap devices such as GaN and SiC (faster, higher voltage). Within Infineon's portfolio, the OptiMOS family is the 100V-300V N-channel flagship line targeting synchronous rectification, OR-ing, hot-swap, and high-frequency switching. Key features include 7.5 mOhm maximum RDS(on) at VGS=10V, low gate charge Qg for fast switching transitions, an integrated body diode for synchronous rectification duty, and avalanche-rated single-pulse robustness. The TO-220 package provides a tab that doubles as the drain terminal and as a mounting surface for an external heatsink, supporting sustained high-current operation. The -GXKSA1 suffix indicates the tube-packaged, RoHS-compliant, qualified ordering code. Typical applications include 48V telecom isolated DC-DC converters, synchronous rectification in server and datacom buck stages, solar micro-inverters and string inverters, battery protection and OR-ing in uninterruptible power supplies, motor control in industrial drives, hot-swap controllers in telecom equipment, and Class-D audio amplifier output stages. The low RDS(on) directly reduces conduction loss, while the low gate charge enables hundreds of kHz switching for smaller magnetics. When designing with this device, drive the gate with a dedicated gate driver (10V VGS recommended) and minimize the gate-loop inductance. For continuous operation above ~50W dissipation, attach the TO-220 tab to a heatsink with thermal compound. Ensure VDS stays below 150V including switching transients and ringing; add a snubber or RC damper if ringing exceeds 80% of VDS rating. Source-pin inductance limits switching speed at high di/dt - use the TO-220 with Kelvin-source packages only when current exceeds 50A continuous.
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPP100N12S305AKSA1 is a 120 V, 100 A N-channel OptiMOS power MOSFET in a TO-220 through-hole package (PG-TO220-3-1), AEC-Q101 qualified for automotive applications. It delivers low on-state resistance, avalanche ruggedness, and a 300 W power dissipation rating, making it suitable for high-current switching in 12 V/24 V automotive and industrial systems. The device is rated to 100 A continuous drain current at Tc and supports pulsed drain current well above that figure for inrush and transient events. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs such as the IPP100N12S305AKSA1 use electron conduction, which delivers lower on-resistance per unit silicon area than equivalent P-channel devices. This MOSFET belongs to Infineon's OptiMOS family, a generation of trench-gate power MOSFETs optimised for low RDS(on), high switching speed, and high avalanche energy capability, falling into the broader category of power transistors > MOSFETs > discrete semiconductors. Key features include 120 V drain-source breakdown voltage, 100 A continuous drain current, 300 W maximum power dissipation, AEC-Q101 automotive qualification, 100% avalanche-tested, RoHS-compliant lead-free construction, MSL1 moisture sensitivity rating, and 175 °C maximum operating junction temperature. The TO-220 package with metal tab also provides a low thermal-resistance path to an external heatsink for high-current applications. The IPP100N12S305AKSA1 uses Infineon's OptiMOS trench technology, which reduces conduction losses by lowering RDS(on) at a given die area and switching losses by minimising gate charge. The 100% avalanche-tested rating ensures robust operation under unclamped inductive switching conditions, which is critical for solenoid, motor, and relay driving where back-EMF energy must be safely absorbed by the MOSFET itself. Typical applications include automotive 12 V/24 V load switching (ECUs, body controllers), high-current DC-DC converters, motor drive and solenoid drivers, battery protection circuits, and industrial power tools. The AEC-Q101 qualification makes it particularly well-suited to safety-relevant automotive electronics. When designing with this device, select a heatsink with adequate thermal capacity to keep junction temperature below the 175 °C maximum. For PWM switching above 20 kHz, drive the gate with at least 10 V VGS to fully enhance the channel and minimise RDS(on), and use a gate-source resistor to suppress parasitic oscillation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for selecting and applying the IPP100N12S305AKSA1.
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
The Infineon IPP100N12S305AKSA2 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated at 120 V drain-source voltage (VDS), 100 A continuous drain current (TC), and 300 W maximum power dissipation (TC). It is housed in a through-hole PG-TO220-3-1 package with three leads (Gate, Drain, Tab) and is part of Infineon's industrial-grade discrete MOSFET portfolio. An N-channel power MOSFET is a voltage-controlled majority-carrier device used as a high-speed switch or low-loss linear element in power conversion circuits. Power MOSFETs sit within the broader semiconductor hierarchy: MOSFET -> discrete semiconductor -> power semiconductor. They are favored over BJTs in switching applications because they require negligible steady-state gate drive current and switch in nanoseconds, dramatically reducing switching losses compared to bipolar devices. The IPP100N12S305AKSA2's 120 V rating places it firmly in the mid-voltage class suitable for 24 V, 36 V, and 48 V bus systems, telecom bricks, and synchronous-rectification secondary sides. Key specifications include a very low on-state resistance (typical R_DS(on) in the single-digit milliohm range at VGS=10 V, exact value per datasheet), gate threshold voltage in the 2-4 V class typical of standard-level OptiMOS parts, and avalanche-rated single-pulse energy capability. The PG-TO220-3-1 package provides a screw-mountable tab for direct heatsink attachment and a thermal resistance suitable for continuous 100 A operation with proper cooling. The package's through-hole leads suit hand-soldered prototypes and high-current screw-terminal assemblies. The OptiMOS 5 process trench cell geometry reduces both R_DS(on) x Qg figure of merit and reverse-recovery charge (Qrr) of the intrinsic body diode, making this part well suited to hard-switched and soft-switched bridge topologies. Compared to older planar MOSFET generations at the same voltage class, it typically cuts conduction losses by 30-50% and switching losses by a similar margin, enabling either higher efficiency or smaller heatsinks in the same mechanical envelope. Typical applications include synchronous rectification in 48 V telecom DC-DC bricks, motor-drive half-bridges in industrial automation (24-72 V bus), high-current hot-swap and OR-ing controllers in server and telecom power shelves, solar inverter boost and buck stages, and uninterruptible power supply (UPS) PFC switches. In each of these roles the part's low R_DS(on) directly translates to higher system efficiency and reduced heatsink cost. When designing with this part, pay attention to gate-drive voltage (10 V VGS recommended for full R_DS(on) specification), PCB layout for the source-kelvin connection if used, and heatsink selection. The TO220 tab is at the Drain potential, so an electrically-insulating thermal interface material or a grounded heatsink must be chosen to match the application's safety and creepage requirements. This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not consolidated on the manufacturer product page.
IPP120N04S4-02 - 40V, 120A OptiMOS-T2 N-Channel MOSFET | Infineon
The Infineon IPP120N04S4-02 is an automotive-grade N-channel OptiMOS-T2 power MOSFET rated for 40 V drain-to-source voltage and 120 A continuous drain current (Tc), housed in a TO-220-3 (PG-TO220-3-1) through-hole package. Its headline ratings are 1.8 mOhm R<sub>DS(on)</sub> (max, datasheet fig), 1.9 mOhm R<sub>DS(on)</sub> (max @ V<sub>GS</sub>=10 V per DigiKey listing), 480 A pulsed drain current (IDM), and 158 W maximum power dissipation (Tc). It is built on Infineon's OptiMOS-T2 trench technology, optimized for the lowest conduction loss and highest thermal efficiency at 40 V. A power MOSFET is a voltage-controlled three-terminal semiconductor switch used in switching power conversion, motor drive, and load management. N-channel enhancement-mode MOSFETs conduct when a positive V<sub>GS</sub> is applied (relative to source); within the broader taxonomy they sit under: MOSFET -> power transistor -> discrete semiconductor. Compared with P-channel devices of the same die size, N-channel MOSFETs typically deliver lower R<sub>DS(on)</sub> per unit silicon, which is why they dominate high-current switching applications. The 40 V OptiMOS-T2 family specifically targets 12 V and 24 V automotive bus systems where high peak current capability and low conduction loss translate directly into smaller heatsinks and longer cable runs. Key differentiating features include AEC qualification, MSL1 robustness up to 260 degC peak reflow, 175 degC operating junction temperature, 100% avalanche-tested, and RoHS-compliant (Green Product) lead-free plating. The part also carries the world's lowest R<sub>DS(on)</sub> at 40 V per Infineon's marketing claim - a meaningful figure for designers who need minimum I<sup>2</sup>R losses in continuous conduction. The TO-220-3 package is the industry workhorse for through-hole power stages because it accepts a clip-on or bolt-on heatsink, accepts wave and hand soldering, and exposes the metal tab for direct thermal coupling to a chassis or cold plate. Typical applications include 12 V / 24 V automotive motor control (EPS, water pumps, oil pumps, fans), DC-DC buck and synchronous-rectifier stages, high-current solenoid and relay drivers, battery protection and load-disconnect switches, and forklift / e-bike power stages. The 480 A pulsed rating also makes it attractive for inrush-current handling and short-duration peak loads where thermal mass averages the dissipation below the 158 W continuous limit. Designers migrating from older 30 V or 40 V planar MOSFETs typically see a 25-40% conduction-loss reduction at the same footprint. When designing with IPP120N04S4-02, keep the gate-drive loop tight (short gate-trace + 10 Ohm gate resistor) to avoid ringing, and provide a TVS or gate-source Zener (typically 12 V) to protect against dv/dt-induced turn-on in half-bridge configurations. At 120 A continuous the part will need either a substantial heatsink or PCB copper pour sized for the application's ambient temperature; the TO-220's tab must be properly insulated with a mica or silicone pad if it sits on a grounded chassis. This page synthesizes distributor pricing, parametric proximity to cross-brand equivalents, and practical PCB layout guidance not found on a single OEM product page. Cross-reference values, design notes, and FAQ answers are assembled from the Infineon datasheet, DigiKey, Mouser, and Octopart listings current as of 2026-10-08.
IPP120N08S4-03 - 80V, 120A OptiMOS-T2 Power MOSFET | Infineon
The Infineon IPP120N08S4-03 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS-T2 technology, rated for 80 V VDS and 120 A continuous drain current, housed in a TO-220-3 (IPAK) through-hole package. It delivers an ultra-low on-state resistance of 2.5 mΩ typical at VGS = 10 V and supports switching applications up to several hundred kilohertz. The 80 V drain-source breakdown gives strong headroom above the 48 V telecom bus and 60 V eBike / light-EV rails it typically serves. An N-channel enhancement-mode MOSFET is a voltage-controlled majority-carrier device: applying VGS above the threshold inverts the surface under the gate oxide and creates a conductive channel between drain and source, with RDS(on) scaling inversely with channel mobility and oxide capacitance. Power MOSFETs like IPP120N08S4-03 sit at the bottom of the power-conversion hierarchy: power semiconductor -> power MOSFET -> N-channel MOSFET -> switching transistor -> discrete semiconductor. They are the workhorse building block for synchronous rectifiers, low-side switches in half-bridges, hot-swap controllers, and eFuse implementations. Key differentiating specifications include 2.5 mΩ maximum RDS(on) at VGS = 10 V (one of the lowest in its 80 V class), 120 A continuous ID rating limited by bondwires, and 245 A silicon-limited current at TC = 25 °C based on RthJC = 0.54 K/W. The device is qualified to AEC-Q101 for automotive use, MSL1 rated to 260 °C peak reflow, 100 % avalanche-tested, and supplied as a RoHS-compliant Green Product. The OptiMOS-T2 generation improves figure-of-merit (RDS(on) × Qg) versus older T1 families, enabling higher switching frequencies with lower gate-drive losses. Architecturally, the OptiMOS-T2 cell uses a trench-gate structure to maximize channel width per unit area while minimizing gate charge. The result is low conduction loss, low switching loss, and a robust body diode suited for synchronous-rectifier and motor-drive topologies. The TO-220-3 package exposes the drain tab for direct PCB copper heatsinking, with thermal resistance RthJC of 0.54 K/W enabling the chip to carry 245 A at 25 °C case temperature. Typical applications include 48 V telecom hot-swap controllers, BLDC motor drives, automotive 48 V mild-hybrid systems, high-current synchronous rectification, and industrial switched-mode power supplies. The AEC-Q101 qualification makes the IPP120N08S4-03 particularly attractive for body-electronics and chassis modules where automotive-grade reliability is required. When designing with this MOSFET, ensure VGS is driven to 10 V for full RDS(on) enhancement, account for SOA derating above 100 °C junction temperature, and provide sufficient gate-drive current (typically 1 A peak) to charge the gate quickly and minimize switching loss. The package RthJA of 62 K/W on a 6 cm² FR4 PCB heatsink should be verified against worst-case conduction loss. This page synthesizes distributor pricing, drop-in alternatives, SOA data and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a one-stop reference for evaluating IPP120N08S4-03 against its OptiMOS family siblings and cross-brand equivalents.
IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
The Infineon IPP120N08S403AKSA1 is an N-channel enhancement-mode power MOSFET rated at 80 V drain-to-source voltage and 120 A continuous drain current (Tc), housed in a TO-220-3-1 (PG-TO220-3-1) through-hole package. It belongs to Infineon's OptiMOS power MOSFET family, delivering 278 W maximum power dissipation at case temperature and a typical on-state resistance of 2.8 mOhm at VGS=10 V, ID=100 A, with a total gate charge of 167 nC and input/transfer capacitances of 11550 pF. According to the Infineon datasheet, the die is bondwire-limited to 245 A at 25 C with RthJC of 0.54 K/W, providing significant transient headroom above the 120 A continuous rating. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to modulate current flow between the drain and source terminals. Within the semiconductor taxonomy, this device sits in the hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> discrete semiconductor. The OptiMOS family specifically targets high-efficiency switching applications where low RDS(on) and low gate charge translate directly into reduced conduction and switching losses, enabling higher switching frequencies and smaller passive components in the surrounding power-conversion circuitry. Key features include 100% avalanche-tested ruggedness, AEC-Q101 automotive qualification, MSL1 moisture sensitivity rated for peak reflow up to 260 C, and Green Product (RoHS-compliant) construction. The device is rated for an operating junction temperature of 175 C, well above the 150 C limit of standard commercial MOSFETs, supporting use in thermally demanding automotive underhood and industrial environments. It also carries a 175 C operating temperature rating and is 100% avalanche-tested. The IPP120N08S403AKSA1 is built on Infineon's advanced trench MOSFET process, which achieves an extremely low figure of merit (FOM = RDS(on) x Qg) for high-frequency switching efficiency. The integrated body diode supports synchronous rectification and bridge topologies. The TO-220-3-1 package provides a robust mechanical form factor for through-hole assembly and offers low thermal resistance when paired with an external heatsink. Typical applications include automotive 12 V / 24 V battery switching, electric power steering (EPS), DC-DC converters, motor drives, and high-current load switches. Designers select this part when an ultra-low-RDS(on) trench MOSFET is required for high-current switching at moderate voltages. The combination of AEC-Q101 qualification and 175 C junction rating makes it especially attractive for automotive powertrain and chassis domains where reliability under harsh thermal cycling is mandatory. When designing with this device, ensure that the gate driver can supply the full 167 nC gate charge quickly to minimize switching transition times and associated switching losses. Use a Kelvin-source connection when available to decouple the gate-drive loop from the high-current source path, reducing parasitic-induced oscillations and improving EMI performance. This page synthesizes distributor pricing, AEC-Q100-qualified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a faster path from selection to validated schematic.
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPP147N12N3GXKSA1 is an N-channel power MOSFET from Infineon's OptiMOS power transistor family, rated for 120 V drain-to-source voltage and 56 A continuous drain current at 25 C case temperature, housed in a through-hole PG-TO220-3 package with a built-in body diode. It is part of the OptiMOS 3 generation and delivers low on-state resistance for high-efficiency switching power conversion stages. According to distributor listing data, the device dissipates up to 107 W at Tc and operates as a single N-channel transistor with built-in diode configuration. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in switching-mode power supplies, motor drives, and load switching circuits. As an N-channel enhancement-mode device, this MOSFET turns on when a positive gate-to-source voltage (Vgs) is applied, and it is the workhorse building block of switched-mode power conversion. Within the broader taxonomy it belongs to: power MOSFET -> MOSFET -> discrete semiconductor -> power management component. The 120 V drain rating places it in the medium-voltage tier suitable for 24 V / 48 V bus systems and telecom rectifier stages. Key differentiating features include Infineon's OptiMOS 3 trench technology for low Rds(on) per unit silicon area, a fully avalanche-rated body diode for unclamped inductive switching, and low gate charge for reduced driver losses at high switching frequencies. The PG-TO220-3 package provides a low thermal resistance path and is suitable for through-hole mounting on heatsinks in industrial-grade converters. Typical applications include synchronous rectification in switch-mode power supplies (SMPS), DC-DC converter high-side and low-side switches, motor drive H-bridges, solenoid drivers, and battery protection circuits in e-mobility and industrial automation. In each application the device's 120 V rating provides generous design margin for 48 V telecom buses or 24 V industrial rails. When designing with this part, pay attention to gate-drive voltage levels: standard logic-level drive may not fully enhance the channel - consult the datasheet for the recommended Vgs range and required gate-charge energy. The PG-TO220-3 package should be mounted on a sufficiently rated heatsink when continuous dissipation exceeds 2-3 W. This page synthesizes distributor pricing, drop-in alternative sourcing, and practical design notes drawn from manufacturer datasheets and real distributor listings - context that goes beyond the raw datasheet.
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
The Infineon IPP200N15N3GXKSA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated for 150 V drain-source voltage and 50 A continuous drain current (at Tc), dissipating up to 150 W, and packaged in a TO-220-3 through-hole outline (PG-TO220-3). The 'GXKSA1' suffix indicates tape-and-reel packaging for high-volume assembly, while the 'IPP' prefix denotes the TO-220 leaded package and 200 in the part number identifies the on-resistance grade of approximately 20 mOhm maximum at VGS = 10 V. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type channel region to allow electron flow between the drain and source terminals. Within the broader power-semiconductor taxonomy, the IPP200N15N3G belongs to the discrete MOSFET family, which itself falls under power transistors, which in turn are a subset of discrete semiconductors used in switched-mode power conversion, motor control, and load switching applications where high efficiency and fast switching are required. Key differentiating specifications include a maximum drain-source on-resistance of 20 mOhm at VGS = 10 V, gate charge typically in the single-digit to low-double-digit nanocoulomb range characteristic of OptiMOS 3, and an Avalanche-rated rugged body diode that simplifies inductive-load designs. The OptiMOS 3 process delivers approximately 40 percent lower RDS(on) and 45 percent better figure-of-merit than the prior generation, allowing designers to consolidate two older devices into one part or to migrate from leaded to surface-mount packages at equivalent loss. Architecturally, the device is a planar-cell N-channel enhancement-mode MOSFET with a vertical DMOS structure, integrating ESD protection at the gate and an avalanche-energy-rated intrinsic body diode. The TO-220-3 package provides a low thermal resistance path via the metal tab, supporting sustained high-current operation with an external heatsink. Typical applications include synchronous-rectifier secondary-side switches in 48 V telecom and server bus converters, motor-drive half-bridges in 24-48 V brushless DC systems, solenoid and relay drivers in industrial automation, and uninterruptible power supply (UPS) inverter stages where the 150 V rating provides ample margin across 24 V and 48 V bus rails. When designing with the IPP200N15N3GXKSA1, ensure that the gate-drive voltage reaches at least 10 V for full enhancement, place a 10-100 nF ceramic bypass capacitor between gate and source near the IC to suppress ringing, and confirm that the heatsink thermal design keeps Tj below 175 C under worst-case SOA conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for sourcing, second-sourcing, and qualifying the IPP200N15N3GXKSA1 in production designs.
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPP320N20N3GXKSA1 is a 200 V, 34 A N-channel power MOSFET built on Infineon's OptiMOS 3 technology, housed in a through-hole TO-220-3 (PG-TO220-3) package. According to the Infineon product page, the device delivers an RDS(on) max of 32 mΩ at VGS = 10 V and a continuous drain current of 34 A at TC = 25 °C, with 136 W of power dissipation, making it a benchmark part for high-voltage, high-efficiency switching. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate power in switching converters, motor drives, and synchronous rectification stages. The 200 V OptiMOS 3 family belongs to the broader discrete-semiconductor hierarchy (MOSFET -> power MOSFET -> discrete semiconductor), and is engineered specifically to minimize conduction and switching losses in 48 V telecom, solar, and industrial power-conversion topologies. Key features of the IPP320N20N3GXKSA1 include a logic-level compatible 4 V minimum gate threshold, very low on-state resistance (32 mΩ max at 10 V VGS), low gate charge, and excellent body-diode ruggedness for hard-switching applications. The part is offered in the industry-standard TO-220-3 footprint, simplifying mechanical mounting and thermal attachment to a chassis or heatsink. Its 136 W power dissipation rating at TC = 25 °C gives substantial thermal headroom for high-current designs when paired with a proper heatsink. From a system-design perspective, the OptiMOS 3 platform combines a trench-gate cell structure with an optimized epitaxial profile to achieve low specific on-resistance (RDS(on) × area) and fast switching transitions. The device is well-suited to continuous-conduction-mode (CCM) and zero-voltage-switching (ZVS) topologies, where both low gate charge (Qg) and low output capacitance (Coss) directly reduce switching loss. Compared with older planar MOSFETs in the same voltage class, the OptiMOS 3 generation typically delivers 30–50 % lower conduction loss, enabling higher efficiency or smaller magnetics at the same power level. Typical applications include synchronous rectification in 48 V DC-DC converters, uninterruptible power supplies (UPS), solar micro-inverters, DC motor drives, and telecom brick converters. Designers also use this part in battery-management systems and eMobility auxiliary converters that benefit from a 200 V breakdown margin. According to the Infineon datasheet, the device is qualified for industrial-grade operating conditions. When designing with the IPP320N20N3GXKSA1, ensure the gate-drive voltage swings high enough (10 V recommended) to fully enhance the channel and realize the datasheet RDS(on). Use a low-impedance Kelvin gate connection if available, place the gate resistor close to the gate pin, and provide a heatsink sized for the application's worst-case continuous dissipation. This page synthesizes distributor pricing, drop-in alternatives, application notes, and PCB design guidance not found in any single Infineon document, so engineers can quickly evaluate the part against cross-brand equivalents for their power-stage design.
IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon
The Infineon IPP600N25N3GXKSA1 is an N-channel power MOSFET rated at 250 V VDS, 25 A continuous drain current (Tc), and 60 mOhm maximum RDS(on), built on Infineon's OptiMOS 3 technology and housed in a through-hole PG-TO220-3-1 package. It dissipates up to 136 W at 25 C case temperature and is optimized for high-efficiency switching in 48 V synchronous rectification, DC-DC converters, uninterruptable power supplies (UPS), and DC motor drive inverters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals in power electronics. Within the discrete semiconductor hierarchy, MOSFETs sit below thyristors and IGBTs in voltage class for high-frequency applications, and are subclassed into N-channel and P-channel types by current-carrier polarity. N-channel MOSFETs generally offer lower on-resistance per unit area than equivalent P-channel parts, which is why this part is preferred on the low-side of half-bridges and as the main switch in buck/boost converters. Key features of this part include 250 V drain-source breakdown voltage, 60 mOhm maximum static on-resistance (VGS = 10 V), 25 A continuous drain current at case temperature, and a TO-220-3-1 through-hole footprint with a metal tab that doubles as the drain connection and a thermal mounting surface. The OptiMOS 3 process technology reduces gate charge Qg and figures of merit (FOM = RDS(on) x Qg) compared with earlier planar generations, which directly translates to lower switching losses at 100 kHz and above. Internally, the device uses a trench-gate vertical DMOS structure on an N+ substrate, with the source metallization on the top side and the drain on the back side bonded to the TO-220 tab. This vertical layout is what allows the 250 V rating and the 25 A current capability in such a small package. The gate is oxide-isolated, so it draws essentially no DC current; switching transitions are controlled by the gate driver's ability to source and sink charge into the gate-source capacitance. Typical applications for the IPP600N25N3GXKSA1 include 48 V synchronous rectification in telecom and server DC-DC converters, primary-side switches in industrial SMPS, low-side switches in half-bridge motor drives, and freewheeling diodes (with appropriate body-diode derating) in UPS inverters. The 250 V rating gives comfortable margin on 48 V, 60 V, and 72 V bus rails. When designing with this MOSFET, ensure the gate driver can supply at least 10 V VGS for full enhancement and verify that switching losses (estimated using Qg and the switching frequency) do not push junction temperature above 175 C. The TO-220 tab should be mounted to a heatsink or substantial copper pour for any continuous current above ~5 A. This page synthesizes distributor pricing, drop-in alternatives sourced from Infineon's OptiMOS 3 family and from cross-brand parametric equivalents, and practical thermal and gate-drive design notes that are not found in the manufacturer datasheet alone.
IPP60R099C7 - 600V 99mOhm 22A CoolMOS C7 MOSFET | Infineon
The Infineon IPP60R099C7 is an industrial-grade N-channel power MOSFET from the CoolMOS C7 superjunction (SJ) family, rated for 600 V drain-source voltage, 22 A continuous drain current at 25C, and 99 mOhm on-state resistance at VGS = 10 V, housed in a through-hole TO-220 (PG-TO220-3) package. A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-source current through a gate-generated electric field. Power MOSFETs sit within the discrete semiconductor family alongside diodes, thyristors, and IGBTs, and serve as the primary switching elements in power electronics such as SMPS, inverters, and DC-DC converters. The CoolMOS C7 series uses superjunction technology - alternating p- and n-type pillars in the drift region - to achieve high breakdown voltage with very low on-resistance and reduced parasitic capacitances versus conventional planar MOSFETs. Key features include a best-in-class figure of merit (low RDS(on) x Qg) that reduces conduction and switching losses, approximately 50% lower turn-off losses (Eoss) compared to the CoolMOS CP series, and an avalanche energy rating (EAS) of 97 mJ for robustness in unclamped inductive switching. The gate threshold voltage is typically 3.5 V with a maximum gate-source rating of +/-20 V, and the junction temperature range is -55C to +150C. Technically, the superjunction architecture shrinks die area and capacitances, enabling high-frequency operation in CCM PFC and LLC resonant topologies. The fast body diode benefits bridge and LLC designs where reverse recovery performance matters. Typical applications include PFC stages in server and telecom power supplies, LLC resonant converters, solar inverters, and EV charging infrastructure. Design tip: use a 5-10 Ohm gate resistor and provide adequate heatsinking; as of 2026-08-29, verify Eoss and Qg values in the official datasheet for your exact switching frequency.