IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
部品番号: IPP100N12S305AKSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.55 | $35.50 |
| 100 | $2.98 | $298.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.05 | $2,050.00 |
IPP100N12S305AKSA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs such as the IPP100N12S305AKSA1 use electron conduction, which delivers lower on-resistance per unit silicon area than equivalent P-channel devices. This MOSFET belongs to Infineon's OptiMOS family, a generation of trench-gate power MOSFETs optimised for low RDS(on), high switching speed, and high avalanche energy capability, falling into the broader category of power transistors > MOSFETs > discrete semiconductors.
Key features include 120 V drain-source breakdown voltage, 100 A continuous drain current, 300 W maximum power dissipation, AEC-Q101 automotive qualification, 100% avalanche-tested, RoHS-compliant lead-free construction, MSL1 moisture sensitivity rating, and 175 °C maximum operating junction temperature. The TO-220 package with metal tab also provides a low thermal-resistance path to an external heatsink for high-current applications.
The IPP100N12S305AKSA1 uses Infineon's OptiMOS trench technology, which reduces conduction losses by lowering RDS(on) at a given die area and switching losses by minimising gate charge. The 100% avalanche-tested rating ensures robust operation under unclamped inductive switching conditions, which is critical for solenoid, motor, and relay driving where back-EMF energy must be safely absorbed by the MOSFET itself.
Typical applications include automotive 12 V/24 V load switching (ECUs, body controllers), high-current DC-DC converters, motor drive and solenoid drivers, battery protection circuits, and industrial power tools. The AEC-Q101 qualification makes it particularly well-suited to safety-relevant automotive electronics.
When designing with this device, select a heatsink with adequate thermal capacity to keep junction temperature below the 175 °C maximum. For PWM switching above 20 kHz, drive the gate with at least 10 V VGS to fully enhance the channel and minimise RDS(on), and use a gate-source resistor to suppress parasitic oscillation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for selecting and applying the IPP100N12S305AKSA1.
ドロップイン代替品: IPP100N12S305AKSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPP100N12S305AKSA1 （同一形状・フットプリント） — 相違点: Package, Technology, MSL Level, Operating Temperature Range, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
IPB027N10N3GATMA1
✅ ドロップイン✓ 在庫あり
$1.62 / 個
データシートを見る →IPD070N06L3GATMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPT015N10NF2SATMA1
✅ ドロップイン✓ 在庫あり
$3.1 / 個
データシートを見る →IPP120N08S403AKSA1
✅ ドロップイン✓ 在庫あり
$2.15 / 個
データシートを見る →IHW40N120R5XKSA1
✅ ドロップイン✓ 在庫あり
$3.5 / 個
データシートを見る →IPP100N12S305AKSA1 最大定格＆電気的特性
| トランジスタタイプ | N-Channel MOSFET |
| Technology | OptiMOS trench |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Maximum Power Dissipation (Ptot) at Tc | 300 W |
| Gate-Source Voltage (VGS) max | ±20 V |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ | TO-220 (PG-TO220-3-1) |
| 実装タイプ | Through Hole |
| ピン数 | 3 |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% tested |
| RoHS Compliance | Compliant (Green product) |
IPP100N12S305AKSA1 ピン構成
| ピン 1 | Gate — Gate input; controls drain-source conduction |
| ピン 2 | Drain — Drain terminal; also connected to the metal tab |
| ピン 3 | Source — Source terminal; return path for load current |
安全動作領域 (DC)
主な用途
IPP100N12S305AKSA1 の用途: 6 件s: Automotive 12V/24V Load Switching, High-Current DC-DC Converters, Motor Drive and Solenoid Drivers, Battery Protection and Management, Industrial Power Tools, Uninterruptible Power Systems and Solar Inverters.
Automotive 12V/24V Load Switching
The IPP100N12S305AKSA1's 120 V VDS rating provides ample headroom for 12 V and 24 V automotive bus systems where load-dump transients can reach 35-40 V on 12 V systems and 60-80 V on 24 V systems. Its 100 A continuous drain current handles high-current loads such as glow plugs, starter assist relays, and HVAC blower motors, while AEC-Q101 qualification and 175 °C junction temperature rating make it suitable for under-hood environments.
おすすめ
High-Current DC-DC Converters
The IPP100N12S305AKSA1 is well-suited as the main switching element in 12 V to 48 V converters and 24 V buck converters for industrial power systems. Its low RDS(on) minimises conduction losses at 50-100 A load currents, while the TO-220 package enables direct mounting to a chassis-attached heatsink. The 100% avalanche rating protects against the inductive kick from the converter's inductor at switch-off, a common failure mode in high-current converters.
おすすめ
Motor Drive and Solenoid Drivers
The IPP100N12S305AKSA1's 100 A continuous current and 100% avalanche rating make it an excellent choice for driving DC motors, brushless DC motor windings, and high-current solenoids in industrial automation. The avalanche energy rating absorbs the back-EMF energy when switching off inductive loads, eliminating the need for external freewheeling diodes in many low-frequency switching applications. The TO-220 package accommodates the thermal dissipation of PWM-driven motor control at high duty cycles.
おすすめ
Battery Protection and Management
In battery management systems (BMS) for 12 V and 24 V lead-acid or lithium battery packs, the IPP100N12S305AKSA1 functions as a low-side disconnect switch and pre-charge MOSFET. Its 100 A rating handles continuous charge and discharge currents, while the 120 V breakdown provides margin against overvoltage transients on the battery bus. The AEC-Q101 qualification is essential for EV and start-stop automotive BMS applications.
おすすめ
Industrial Power Tools
Cordless power tools operating from 18 V to 36 V battery packs benefit from the IPP100N12S305AKSA1's high current handling and rugged construction. The 120 V VDS rating tolerates brush-motor inductive kickback without external clamping, while the 300 W power dissipation supports sustained PWM operation driving high-torque brushless motors. The TO-220 package with metal tab simplifies thermal management in tool housings with constrained heatsink space.
おすすめ
Uninterruptible Power Systems and Solar Inverters
In low-voltage solar charge controllers and small uninterruptible power supplies, the IPP100N12S305AKSA1 acts as the main switching element between the solar panel/battery and the load. Its 120 V rating handles 24 V or 48 V battery systems with input voltage transients, while 100 A continuous rating supports inverters up to several kVA. The avalanche rating is critical for absorbing energy when the inverter's transformer or inductor switches off at high current.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPP100N12S305AKSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPB027N10N3GATMA1 | IPD070N06L3GATMA1 | IPT015N10NF2SATMA1 | IPP120N08S403AKSA1 | IHW40N120R5XKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220 (PG-TO220-3-1) | TO-220 | TO-220 | TO-220 | TO-220 | TO-247 (IGBT) |
| Drain-Source Voltage (VDS) | 120 V | 100 V | 60 V | 100 V | 80 V | 1200 V |
| Technology | OptiMOS N-Channel MOSFET | OptiMOS N-Channel MOSFET | OptiMOS N-Channel MOSFET | OptiMOS N-Channel MOSFET | OptiMOS N-Channel MOSFET | IGBT |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliant | Yes (Green product) | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- 120 V VDS with 100 A continuous current in TO-220 （vs IPP120N08S403AKSA1)
- 100% avalanche tested with AEC-Q101 qualification （vs IPB027N10N3GATMA1)
- 300 W power dissipation in TO-220 through-hole （vs IHW40N120R5XKSA1)
設計ノート
At continuous 100 A with low RDS(on) the IPP100N12S305AKSA1 dissipates significant conduction loss. Estimated: at RDS(on) = 5 mΩ and 100 A, conduction loss = I² × R = 50 W, requiring a heatsink with thermal resistance (RthSA) below (Tjmax - Tamb)/Pdiss - Tamb. With Tjmax=175°C, Tamb=85°C, Pdiss=50W, the heatsink-to-ambient must be below 1.8°C/W. Use thermal interface material and adequate mounting torque (typically 0.5-0.7 N·m for TO-220).
Gate drive traces should be kept short and the gate-source resistor (typically 10-100 Ω) placed close to the gate pin to suppress parasitic oscillation. For switching frequencies above 20 kHz, add a small ferrite bead or gate-source resistor to dampen ringing caused by gate-source capacitance and source-lead inductance. Decouple the gate driver supply with at least 1 µF ceramic capacitance adjacent to the driver's VCC pin.
Do not exceed the maximum VGS rating of ±20 V; overvoltage on the gate oxide will permanently damage the MOSFET. For avalanche operation, ensure unclamped inductive switching energy stays within the datasheet's EAS rating. Driving inductive loads without adequate avalanche headroom or external clamping can cause device failure. Always verify the body diode's reverse recovery characteristics when used in synchronous rectification or bridge topologies.
コンプライアンス情報
AEC-Q101 (automotive-grade MOSFET standard) qualified per Infineon datasheet. RoHS compliant (Green product). MSL1 rated for 260°C peak reflow.
