MOSFET
製品 (1294)
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon ISZ019N03L5SATMA1 is a 30V N-channel power MOSFET from Infineon's OptiMOS 5 30V family, housed in a 5x6 mm PG-TSDSON-8-FL surface-mount package with an exposed pad. It features an extremely low typical on-resistance of 1.9 mΩ at VGS=10V and a continuous drain current of 22 A at TA=25°C (40 A at TC=25°C), making it one of the lowest-RDS(on) parts in its package size. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs sit in the discrete semiconductor hierarchy between small-signal transistors and IGBTs, optimized for fast switching at voltages typically from 12V to 300V. The Infineon OptiMOS family specifically targets synchronous rectification, OR-ing, hot-swap, and battery-protection applications where ultra-low RDS(on) and small footprint are mandatory. Key specifications include 1.9 mΩ typical RDS(on) at 10V VGS, a gate threshold (VGS(th)) of 2V typical with ±20V maximum gate rating, a total gate charge (Qg) of 44 nC at 10V, and an input capacitance (Ciss) of 2800 pF at 15V. The device is rated for avalanche operation and 100% Rg-tested, providing robust performance in hard-switching topologies. The PG-TSDSON-8-FL package offers superior thermal performance through the exposed die-attached pad. Typical applications for the ISZ019N03L5SATMA1 include synchronous rectification in telecom and server DC-DC converters, battery management and protection circuits in 12V Li-ion packs, OR-ing and hot-swap controllers, motor drive half-bridges in 12V/24V systems, and high-current USB Power Delivery (PD) load switches. Its low gate charge and tight threshold distribution also make it well suited to high-frequency point-of-load converters. When designing with this MOSFET, minimize parasitic source inductance by keeping the source Kelvin connection short, and use a 10kΩ gate-source resistor to prevent unwanted turn-on from dv/dt coupling. For high-current applications, ensure the PCB copper area under the exposed pad is maximized to keep junction temperature below the 175°C absolute maximum.
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISZ023N06LM6ATMA1 is an OptiMOS 6 60 V N-channel power MOSFET rated at 24 A continuous drain current (Ta) and 149 A pulsed drain current (Tc) in a PG-TSDSON-8-34 surface-mount package. As part of Infineon's OptiMOS 6 60 V family, it delivers >37% lower RDS(on) and ~25% higher figure-of-merit than the previous OptiMOS 5 generation, making it one of the lowest-resistance 60 V MOSFETs on the market in this footprint. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power conversion applications. MOSFETs sit within the broader hierarchy of discrete semiconductors, alongside IGBTs, BJTs, and diodes, and they dominate low-to-medium voltage (<200 V) synchronous rectification, hot-swap, motor drive, and DC-DC conversion designs. The 60 V class specifically targets automotive 12 V/24 V systems, telecom 48 V rails, industrial power supplies, and USB Power Delivery (USB-PD) fast-charging adapters. Key specifications include an extremely low RDS(on) (per the OptiMOS 6 family, sub-3 mOhm typical at 10 V VGS), 60 V VDS rating, low gate charge Qg for fast switching, and an operating temperature range of -55C to +175C. The PG-TSDSON-8-34 package provides an exposed drain pad that minimizes thermal resistance and enables direct PCB copper-cooling, removing the need for an external heatsink at moderate dissipation levels. Logic-level VGS(th) ensures compatibility with standard 5 V and 3.3 V microcontroller GPIO drivers. OptiMOS 6 technology uses Infineon's advanced trench-cell architecture with a refined gate structure and epitaxial layer that simultaneously minimizes conduction loss, switching loss, and output charge. The result is a device that excels in both hard-switching topologies (synchronous buck/boost converters) and soft-switching applications (LLC, phase-shifted full-bridge). Compared with older planar MOSFETs of the same RDS(on), OptiMOS 6 typically halves switching losses at 100-500 kHz frequencies. Typical applications include 48 V telecom hot-swap controllers, automotive LED headlight drivers, USB-PD fast-charging adapters, e-bike and e-scooter motor controllers, server DC-DC point-of-load converters, and battery management systems (BMS) protection MOSFETs. Its combination of low RDS(on), high current pulse rating, and small footprint makes it especially suited to space-constrained, high-efficiency designs. When designing with this part, ensure VGS drive is in the 10 V range for lowest RDS(on); 4.5 V VGS will work but increases conduction loss. PCB layout must keep the source-kelvin connection (pin 2) short and direct to the gate driver to prevent gate ringing. Thermal vias under the exposed pad are mandatory; a 6 cm2 copper pour per the datasheet is recommended for full 100 W rating. This page synthesizes Infineon datasheet specifications, distributor pricing, and drop-in alternatives - providing engineering context not aggregated on distributor product pages.
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISZ025N06NM6ATMA1 is a 60 V N-channel power MOSFET from the OptiMOS 6 family, rated for 137 A continuous drain current at 25 °C case temperature and packaged in the compact PG-TSDSON-8-34 (5x6 mm) surface-mount footprint with an exposed drain pad. It delivers a maximum on-resistance of 2.5 mΩ at VGS = 10 V, the lowest RDS(on) in the OptiMOS 6 60 V lineup, and is qualified for both 22 A continuous drain current at Ta and 137 A at Tc operation. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs are the dominant device type in low-voltage synchronous buck converters, motor drives, and battery protection circuits because of their lower on-resistance per unit silicon area compared to P-channel counterparts. The OptiMOS 6 60 V family sits in the voltage regulator -> DC-DC converter -> power management IC hierarchy, targeting high-current point-of-load and OR-ing applications where conduction loss dominates. Key differentiators include >37% lower RDS(on) and ~25% higher figure-of-merit (FOM, RDS(on) × Qg) versus the previous OptiMOS 5 generation, plus a 100 W power dissipation rating at Tc that enables high-current designs without paralleling devices. The 3.3 V typical gate threshold supports 5 V logic-level drive while still maintaining a safety margin against accidental turn-on. The PG-TSDSON-8-34 package exposes the drain to a top-side thermal pad, reducing PCB loop inductance and improving heat-sinking through the board. The ISZ025N06NM6 uses Infineon's latest trench MOSFET technology with a soft-switching optimized body diode, reducing ringing in half-bridge topologies. This makes it well-suited to high-frequency telecom and server DC-DC converters where switching losses and reverse-recovery charge directly impact efficiency. The low Qg and Qgd also reduce gate-driver losses and simplify parallel-device designs. Typical applications include 48 V telecom bus OR-ing and hot-swap controllers, synchronous buck converters in server and datacom VRMs, e-fuse and battery protection in 24 V/48 V industrial systems, motor drive H-bridges, and USB-PD power adapters above 100 W. The wide safe operating area also makes it suitable for solenoid driving and Class-D audio output stages. When designing with this device, place the gate-driver within 5 mm of the gate pin to minimize parasitic inductance, and use a 10 Ω gate resistor to dampen the miller plateau ringing. The exposed top pad must be soldered to a continuous copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at Tc = 25 °C. This page synthesizes distributor pricing, drop-in alternatives from the Site MPN list, and thermal/layout design notes not found in the manufacturer datasheet alone.
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
The Infineon ISZ028N03LF2SATMA1 is an N-channel 30V StrongIRFET 2 power MOSFET rated at 128A continuous drain current (Tc) and 22A continuous drain current (Ta), with a maximum on-resistance of 2.8 mΩ and a 2.35V gate threshold voltage, packaged in a compact surface-mount PG-TSDSON-8 FL package. It combines ultra-low RDS(on) with high pulsed-current handling, optimized for high-frequency switching from low- to high-frequency power conversion. The device dissipates up to 83W at Tc and 3W at Ta. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern switching power conversion. StrongIRFET 2 is Infineon's second-generation family of low-voltage power MOSFETs that improve upon classic StrongIRFET by lowering RDS(on) for the same silicon area, increasing current density, and reducing gate charge (Qg) to shrink switching losses. Within the broader component taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> transistor -> semiconductor. StrongIRFET 2 specifically targets synchronous rectification, hot-swap ORing, and high-current DC-DC conversion where every milliohm of conduction loss translates into measurable efficiency improvement. Key features of the ISZ028N03LF2SATMA1 include an optimized synchronous-rectifier cell design, low Qg to reduce driver losses, avalanche-rated single-pulse robustness, a logic-level-compatible gate threshold around 2.35V, and an industry-standard 8-pin TSDSON footprint with an exposed thermal pad. The PG-TSDSON-8 FL package has no leads on two sides (the FL = 'flat lead' variant) and provides a very low package resistance, keeping the total circuit-loop RDS(on) close to the silicon RDS(on). Together these properties make the part easy to drive from standard PWM controllers while keeping conduction and switching losses low. The architecture uses Infineon's advanced trench MOSFET cell technology, paired with a copper-clip-style internal source connection that minimizes package resistance contribution. Compared to older D2PAK or DPAK packages with similar silicon area, the TSDSON-8 FL dramatically shrinks PCB footprint while improving thermal coupling to the PCB copper, allowing designs that handle >80W in the same board space previously used for <30W converters. The result is a parts list simplification: smaller magnetics, smaller heatsinks, and easier layout. Typical applications include high-frequency synchronous rectification in 12V-to-low-voltage DC-DC converters (e.g., 12V->3.3V/5V POL), high-current hot-swap and ORing for server/ telecom boards, battery management in 12V/24V e-mobility, USB-PD and other Type-C sink power paths, and motor drive H-bridges for low-voltage brushless DC motors. The device's low RDS(on) minimizes I²R loss on the high-current side, directly improving system efficiency and thermal headroom. When designing with this part, place the gate driver as close as possible to the gate pin to minimize ringing. Use a Kelvin-source connection if available, and ensure the PCB copper under the exposed pad is sized to handle the steady-state dissipation. Recommended gate-drive voltage is 10V for lowest RDS(on); 4.5V is acceptable for logic-level systems with reduced performance. This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-14, drop-in alternatives within the StrongIRFET 2 family, and practical design notes that go beyond the bare datasheet figures.
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon ISZ033N03LF2SATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 30 V VDS, 20 A continuous drain current at TA=25 C (109 A pulsed at TC=25 C), and 3 W power dissipation at TA (71 W at TC), housed in a surface-mount PG-TSDSON-8 FL package. Built on Infineon's advanced OptiMOS 5 30 V platform, this MOSFET targets high-frequency, high-current switching applications where low on-resistance and minimal gate charge are critical to efficiency. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current from drain to source when the gate-source voltage exceeds the threshold. The OptiMOS 5 family is Infineon's 30 V/40 V/60 V/80 V/100 V generation of low-voltage N-channel MOSFETs, sitting within the broader taxonomy of power MOSFET -> power semiconductor -> discrete semiconductor -> electronic component. They are designed to minimize conduction loss (low RDS(on)), switching loss (low Qg, Qgd), and figure-of-merit (FOM = RDS(on) x Qg) — parameters that directly determine switching-converter efficiency. Key features of the ISZ033N03LF2SATMA1 include an extremely low on-resistance for a 30 V N-channel device, ultra-low gate charge Qg enabling fast switching edges, low RDS(on) x Qg figure-of-merit, and an operating junction temperature up to +175 C. The PG-TSDSON-8 FL (flip-chip leadless) package has a top-side cooling thermal pad that pulls heat directly out of the silicon die, dramatically lowering thermal resistance compared to standard wire-bonded TSDSON packages. From an architecture perspective, this part uses Infineon's latest-generation silicon process to deliver a sub-milliohm-class on-resistance at 10 V gate drive, while still maintaining safe linear-mode operation. The device is engineered for both hard-switched and soft-switched topologies including synchronous buck converters, point-of-load regulators, and motor-drive half-bridges operating at switching frequencies from 100 kHz to over 1 MHz. Typical applications include DC-DC voltage regulators for telecom and server power supplies, OR-ing FETs in redundant 12 V / 24 V distribution, battery management and protection circuits in cordless power tools, USB-PD and Type-C load switches, and synchronous rectification in secondary-side SMPS stages. The 30 V rating gives comfortable headroom for 12 V bus rails and 19 V laptop adapters. When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V to fully enhance the channel and achieve the lowest RDS(on). For high-frequency applications above 500 kHz, pay close attention to gate-loop inductance and use a gate-source resistor of 10-100 ohm to suppress ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. The PG-TSDSON-8 FL package features an exposed top-side pad that interfaces directly with the silicon backside, enabling direct PCB-side cooling in both top- and bottom-cooled configurations. This makes it an excellent choice for high-density designs where the footprint is constrained but thermal dissipation must remain low.
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
The Infineon ISZ056N03LF2SATMA1 is an N-channel power MOSFET rated at 30 V drain-source voltage with 72 A continuous drain current (Tc), built on Infineon's StrongIRFET 2 technology and housed in a PG-TSDSON-8 (PQFN 3.3x3.3) surface-mount package. Key parameters include a maximum on-resistance of 5.6 mOhm at 10 V VGS, a gate threshold of 2.35 V, and power dissipation of 3 W (Ta) or 52 W (Tc). A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source. MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> semiconductor -> electronic component. The StrongIRFET 2 family targets low to high switching frequencies and is engineered to minimize conduction loss (RDS(on)) and switching loss simultaneously, making them well-suited to synchronous rectification, DC-DC conversion, and motor drive stages. This device delivers an industry-leading 5.6 mOhm max RDS(on) in a compact 3.3x3.3 mm PQFN outline, an area that is roughly 60% smaller than equivalent DPAK or D2PAK footprints. The low figure-of-merit (FOM = RDS(on) x Qg) reduces both conduction and switching losses, improving overall converter efficiency. The part is fully lead-free, RoHS compliant, and uses an environmentally friendly Pb-free plating. Typical applications include synchronous rectification in 24 V telecom and industrial bus converters, OR-ing and hot-swap controllers in server power supplies, BLDC motor drivers in 12 V e-mobility tools, USB Power Delivery (PD) and DC-DC buck/boost converters, and battery management protection FETs in 1S-3S Li-ion packs. The low gate charge and low thermal resistance of the exposed pad enable fast switching at 200 kHz to 1 MHz without compromising efficiency. Design considerations include minimizing source-inductance loop area in the PCB layout, providing sufficient copper pour under the exposed pad for heat extraction, and ensuring the gate driver can supply 4.5 V VGS for full enhancement. The maximum junction temperature is 175 C with appropriate derating, and Tj reference thermal resistance is 50 C/W max at steady state. This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives, and practical design guidance not found on the manufacturer product page alone.
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
The Infineon ISZ072N06NM6ATMA1 is an N-channel OptiMOS 6 60V power MOSFET rated for 57A continuous drain current (at case) and 12.7A (at ambient Ta), housed in a compact PG-TSDSON-8-34 surface-mount package with a maximum on-resistance of 7.2 mΩ. It delivers >37% lower RDS(on) and approximately 25% higher figure-of-merit (FOM Qg) versus the previous OptiMOS 5 generation. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs in the 60V class sit in the power-management hierarchy: MOSFET -> discrete semiconductor -> power switch -> DC-DC converter / motor drive building block. They are the workhorse of synchronous rectification, hot-swap, and low-voltage (<60V) high-current load switching across automotive, industrial, and computing systems. Key features of this OptiMOS 6 device include a 7.2 mΩ maximum RDS(on) at 10V VGS, optimized gate charge for high-frequency switching, a logic-level capable threshold around 3.3V, and a low thermal resistance path through the exposed-drain PG-TSDSON-8-34 package. The device is rated for 50W power dissipation at 25°C case temperature with proper PCB copper area (6 cm² on 40x40x1.5mm FR4 with 70µm copper), making it well suited to space-constrained high-current designs. The OptiMOS 6 technology platform uses Infineon's advanced trench cell architecture to minimize both conduction and switching losses. Compared to planar MOSFETs of similar rating, this part exhibits substantially lower gate charge (Qg) and Qgd, which directly reduces driver losses in high-frequency applications such as switched-mode power supplies operating at 500 kHz to 1 MHz. Typical applications include 48V eMobility auxiliary systems, DC-DC converter primary-side synchronous rectification, hot-swap and OR-ing circuits in telecom/server power distribution, motor drive H-bridges for 12V/24V/48V brushless DC motors, and high-current load switching in industrial PLCs. The 60V rating also covers 48V nominal battery systems and 36V nominal e-bike / light eMobility rails with substantial transient headroom. When designing with this MOSFET, ensure the gate drive voltage reaches 10V for full RDS(on) enhancement; logic-level operation at 3.3V is partially enhanced, so the on-resistance is higher than the datasheet minimum. A gate-source resistor of 10 kΩ is recommended to prevent inadvertent turn-on from dv/dt-induced Miller current, and PCB layout must minimize the source-loop inductance to limit ringing and voltage overshoot. This page synthesizes distributor inventory data, drop-in alternative MPNs in the same PG-TSDSON-8-34 footprint, and practical design notes that supplement the Infineon datasheet for engineering selection.
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
The Infineon ISZ15EP15LMATMA1 is a P-channel power MOSFET built on Infineon's OptiMOS technology, rated for -150 V drain-source voltage with a maximum on-resistance of 1500 mOhm at 10 V gate drive, housed in a compact 8-pin PG-TSDSON (PQFN 3.3 x 3.3 mm) package with an exposed thermal pad. The device delivers continuous drain current of 820 mA at TA=25C and 2.7 A at TC=25C, with power dissipation of 2.5 W on the PCB and 26.3 W with case cooling. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by negative charge carriers (holes) when a negative gate-source voltage is applied relative to the source terminal. P-channel MOSFETs occupy the high-side switch position in low-side-grounded systems and simplify gate drive in negative-rail or load-switching applications because the gate can be referenced to the same ground as the upstream controller. Within the broader taxonomy, this part belongs to the discrete MOSFET family, which itself is a subclass of power semiconductors under the discrete semiconductor hierarchy. The OptiMOS designation indicates Infineon's trench-gate process optimized for low on-resistance per unit silicon area. Key features of the ISZ15EP15LMATMA1 include the trench-gate OptiMOS process for low RDS(on) per area, a logic-level compatible gate drive that simplifies interface to 3.3 V or 5 V microcontrollers through an external charge pump or gate driver, a maximum drain-source voltage of -150 V for high-side switching in 48 V, 60 V, or 100 V buses, and a thermally enhanced PQFN 3.3 x 3.3 package with an exposed die pad (EP) that lowers thermal resistance and enables PCB heatsinking through copper pours. Typical applications include high-side load switches in industrial 48-100 V systems, battery management systems for protection FETs in 24-96 V battery packs, USB-PD and e-Marker power path switching, hot-swap controllers, and adapter or charger reverse-polarity protection. The compact PQFN footprint also makes it attractive in space-constrained DC/DC converters and motor pre-driver stages. Designers should pay attention to gate drive headroom. Because the gate-source threshold is negative for a P-channel MOSFET, the device requires the gate to be pulled at least 4-6 V below the source to fully enhance. A small gate-source resistor (10-100 kOhm) is recommended to prevent floating-gate turn-on during transients, and the exposed pad must be soldered to a sufficiently large copper pour to manage the 2.5 W PCB dissipation rating. This page synthesizes Infineon OptiMOS P-channel parametric data, distributor pricing, drop-in alternatives, and practical design guidance that go beyond the manufacturer datasheet alone.
ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon
The Infineon ISZ173N15NM6ATMA1 is an N-channel OptiMOS 6 power MOSFET rated at 150V with 48A continuous drain current in a compact PG-TSDSON-8 FL surface-mount package. Part of Infineon's OptiMOS 6 150V family, it delivers industry-leading Figure of Merit (FOM) for high-frequency switching applications, achieving 7.9A continuous drain current at ambient temperature (Ta) and 48A at case temperature (Tc), with 2.5W power dissipation at Ta and 94W at Tc. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that enables efficient power conversion in switched-mode power supplies, motor drives, and DC-DC converters. The MOSFET category sits within the broader hierarchy of discrete power semiconductors, alongside IGBTs, BJTs, and thyristors, serving as the workhorse for low-to-medium voltage (<300V) switching applications where fast switching, low conduction loss, and high efficiency are critical. Key features of the ISZ173N15NM6ATMA1 include ultra-low RDS(on) values optimized for high-current applications, integrated gate protection, and excellent thermal performance in a small footprint. The PG-TSDSON-8 FL package features a low-profile design with an exposed drain pad that significantly reduces thermal resistance, enabling high power dissipation in space-constrained PCB layouts. The OptiMOS 6 technology platform represents Infineon's sixth-generation power MOSFET architecture, using advanced trench-gate structures to minimize both switching and conduction losses. This technology is specifically engineered for high-frequency, hard-switching applications like telecom DC-DC converters, server power supplies, and solar microinverters, where reduced switching losses directly translate to higher system efficiency and reduced cooling requirements. Typical applications include 48V telecom bus converters, synchronous rectification in switched-mode power supplies (SMPS), motor drive circuits in 48V-72V battery systems, solar power optimizers, and Class-D audio amplifiers. The 150V voltage rating provides ample margin for 48V, 60V, and 96V bus systems with inductive switching transients. When designing with this MOSFET, ensure gate-drive voltage compliance with the VGS(th) specification. The PG-TSDSON-8 FL package requires careful PCB thermal design - at least 6 cm² of copper area on a 40mm x 40mm x 1.5mm FR4 PCB is required to achieve rated performance. Proper gate-driver selection minimizes switching losses and EMI.
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
The Infineon ISZ230N10NM6ATMA1 is a 100V N-channel power MOSFET built on Infineon's OptiMOS 6 trench technology, housed in a compact PG-TSDSON-8 FL (3.3 x 3.3 mm) surface-mount package. The device delivers a continuous drain current of 7.7A at ambient temperature (Ta) and 31A at case temperature (Tc), with a maximum power dissipation of 3W (Ta) and 48W (Tc). According to the Infineon product brief, the ISZ230N10NM6 family offers 20% lower RDS(on) and 30% improved figure-of-merit versus the previous generation, optimizing it for high-frequency switching applications. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which a positive gate-to-source voltage creates a conductive n-channel between drain and source. N-channel MOSFETs are the workhorse of switched-mode power conversion because their lower on-resistance per unit silicon area (compared to P-channel devices) yields higher efficiency. The OptiMOS 6 family belongs to the broader category of power MOSFETs, which sit under discrete semiconductors in the power-management hierarchy and serve as the switching element in DC-DC converters, motor drives, and synchronous rectification stages. Key specifications include a typical on-resistance of 23 milliohms at VGS=10V and ID=10A, a low gate threshold around 3.3V at 13 microamps, and an avalanche-rated single-pulse body diode. The trench-gate structure minimizes both conduction and switching losses, while the FL (flip-chip leadless) package provides an extremely low package inductance path and top-side cooling through the exposed pad. The PG-TSDSON-8 footprint is widely second-sourced, giving board designers flexibility across the 100V MOSFET category. Typical applications include telecom 48V hot-swap controllers, server DC-DC point-of-load converters, solar micro-inverters, and high-frequency drone ESC power stages. The combination of low Qgd and low RDS(on) makes this part well suited to hard-switched topologies above 100 kHz where switching loss dominates. Compared with the OptiMOS 5 generation, the ISZ230N10NM6 reduces gate charge by approximately 30%, allowing smaller gate drivers and lower total BOM cost. When designing with this MOSFET, observe the SOA boundaries at high VDS and verify that the gate driver can supply the peak gate current demanded by Qg at the chosen switching frequency. Keep the gate-drive loop area minimal by placing the gate resistor and bypass capacitor directly at the gate pad. For high-side (high-side switch) or low-side placements, the same package pinout applies, but thermal coupling to the PCB copper pour is critical for sustained high-current operation.
JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L
The Jiejie Micro JMTG070N06A is a 60 V, 70 A N-channel enhancement-mode power MOSFET built on advanced trench technology, supplied in a PDFN5x6-8L (Power DFN 5x6 mm, 8-lead) surface-mount package. It delivers a typical on-resistance below 6 mOhm at VGS = 10 V, combining low conduction loss, low gate charge, and a small thermal footprint to address high-current switching applications. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to modulate current flow between source and drain. N-channel enhancement-mode devices such as the JMTG070N06A require a positive gate-to-source voltage (above VGS(th)) to turn on, and they belong to the broader category of power transistors within discrete semiconductors. They sit at the heart of switching-mode power conversion, motor drive, and load management, where they replace bipolar transistors with far higher switching efficiency and simpler gate drive requirements. Key features of the JMTG070N06A include a 60 V drain-to-source breakdown voltage (VDS), 70 A continuous drain current, RDS(on) under 6 mOhm at VGS = 10 V, advanced trench cell design for excellent figure-of-merit, and a lead-free, RoHS-compliant PDFN5x6-8L package with an exposed drain pad for low thermal impedance. The trench technology minimizes cell pitch and reduces both on-resistance and gate charge simultaneously, while the bottom-source/center-drain pad layout supports direct PCB heatsinking. The device is rated for avalanche operation, with the datasheet specifying an EAS condition of VDD = 30 V, VGS = 10 V, L = 0.5 mH, Rg = 25 ohm, and IAS = 27 A at TJ = 25 degC - useful headroom for unclamped inductive switching events. Internal ESD protection on the gate and a wide safe operating area (SOA) further enhance robustness in real-world motor and converter environments. Typical applications include high-current synchronous rectification in switched-mode power supplies, brushless DC (BLDC) motor drive stages in e-bikes and power tools, battery protection and high-side/low-side switching in lithium packs, Class-D audio amplifier output stages, and high-current DC load switches. The combination of 60 V rating with very low on-resistance makes it particularly well suited to 12 V and 24 V battery systems. When designing with this MOSFET, mind that the PDFN5x6-8L package has a thermal pad that MUST be soldered to a sufficient PCB copper area to achieve rated current. Gate drive rise/fall times should be controlled with a small gate resistor (typically 10 ohm) to limit ringing, and the VGS(th) of the part should be checked against the chosen gate driver's logic output swing to guarantee full enhancement at full load. This page synthesizes JMTG061A distributor pricing, drop-in same-package equivalents, SOA annotations, and practical PCB layout notes not found in the bare manufacturer datasheet, structured to be citable to AI search engines and engineering buyers.
JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie
The JieJie Microelectronics JMTG100N06A is a 60 V, 55 A N-channel Power Trench MOSFET housed in a PDFN5x6-8L (Power DFN 5 mm × 6 mm, 8-lead) surface-mount package. It is specified with a maximum drain-source voltage V(DSS) of 60 V, a continuous drain current I(D) of 55 A at V(GS) = 10 V, and a typical on-resistance R(DS(on)) of 7.7 mΩ at V(GS) = 10 V (8.9 mΩ at V(GS) = 4.5 V), making it well suited to high-current, low-loss switching. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage creates an inversion layer that conducts current between drain and source. Trench MOSFET technology deepens the gate structure into the silicon, increasing cell density and reducing both R(DS(on)) per unit area and gate charge. The JMTG100N06A belongs to the discrete-semiconductor hierarchy: MOSFET → power MOSFET → trench MOSFET → N-channel enhancement-mode MOSFET, and is typically used as a low-side or high-side switch in power-conversion blocks. Key differentiating features include a typical V(GS(th)) of 1.5 V for logic-level-friendly driving, 100 % UIS (unclamped inductive switching) tested avalanche ruggedness, 100 % V(DS) tested production screening, Pb-free plating, halogen-free construction, and RoHS compliance. The combination of low R(DS(on)), high peak current capability, and the thermally enhanced PDFN5x6 package with an exposed drain pad enables high power density without external heatsinking in many applications. The device's low gate charge and low R(DS(on)) minimize both conduction and switching losses, which is critical for hard-switched converters, motor-drive H-bridges, and synchronous-rectification stages. The trench cell structure reduces Miller charge, allowing faster turn-on/turn-off transitions and lower driver loss. The 8-lead PDFN5x6 footprint is electrically optimized so that pins 5–8 are the drain, providing a low-impedance thermal and electrical path to the PCB copper pour. Typical applications include DC-DC converter high-side and low-side switches, BLDC and brushed-DC motor drivers, battery protection and load switches, e-bike and e-scooter power stages, LED driving circuits, and power OR-ing / hot-swap controllers. The 60 V rating provides ample margin for 12 V and 24 V bus systems, while the 55 A continuous current supports multi-hundred-watt power stages. A key design consideration is thermal management: although the PDFN5x6 has a low junction-to-case thermal resistance, total dissipation is dominated by the PCB copper area beneath the exposed pad. At 7.7 mΩ and 30 A continuous current, conduction loss is ~7 W, so at least 1 square inch of 2 oz copper on a multi-layer board is recommended to keep the junction rise below 50 °C above ambient. This page synthesizes JieJie datasheet specifications, distributor pricing, drop-in alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluation.
LMG3104R017 - 100V 1.7mΩ GaN FET with Integrated Driver | Texas Instruments
The Texas Instruments LMG3104R017 is a 100V, 1.7mΩ enhancement-mode Gallium Nitride (GaN) HEMT with an integrated high-frequency gate driver, packaged in a low-inductance surface-mount power stage. It belongs to TI's LMG310xR0xx family of GaN power stages with integrated protection and smart-switching features. The device combines a 100V GaN FET die with a level-shift capable driver, so two devices can build a half-bridge without an additional discrete high-side level shifter. The LMG3104 variant adds logic input interlock in Independent Input Mode (IIM) to prevent shoot-through. An enhancement-mode GaN HEMT (High Electron Mobility Transistor) is a wide-bandgap power transistor that conducts when a positive gate voltage is applied. GaN FETs offer lower switching losses, smaller output charge, and higher switching frequency than silicon MOSFETs of equivalent RDS(on). GaN belongs to the wider wide-bandgap semiconductor family alongside SiC and is increasingly used in power management ICs, discrete power switches, and integrated power stages where high efficiency and small form factor matter. Key specifications include 100V drain-source blocking voltage, 1.7mΩ typical on-resistance, integrated gate driver with bootstrap support, cycle-by-cycle overcurrent protection, and overtemperature shutdown. The integrated driver eliminates the parasitic inductance between a discrete gate driver and FET, enabling sub-nanosecond switching edges with controlled ringing. Built-in smart-switching features reduce EMI by managing slew rate during turn-on and turn-off transitions. The architecture pairs a TI GaN-on-Si HEMT die with a companion silicon gate-driver die inside the same package, communicating through internal bond wires and a low-impedance Kelvin source connection. This co-packaged approach achieves gate-loop inductance of roughly 0.5 nH, far below what is achievable with a discrete driver plus FET layout, which is the main reason GaN power stages switch at multi-MHz frequencies without unacceptable ringing. Typical applications include 48V telecom and server bus converters, 48V to 12V intermediate bus architectures, high-density DC-DC point-of-load stages, solar microinverters and optimizers, industrial motor drives below 100V, and Class-D audio amplifiers. The half-bridge compatibility makes it especially suited to synchronous buck, boost, and half-bridge topologies. A key design consideration: the bootstrap circuit requires a low-leakage bootstrap diode and a properly sized boot capacitor rated above the maximum high-side supply rail. Pay close attention to PCB layout of the power loop, since even a few nH of stray inductance can defeat the GaN advantage and cause dangerous voltage overshoot during turn-off. This page synthesizes distributor pricing, drop-in GaN alternatives from the same LMG310x family, design notes on layout and thermal management, and a pin-for-pin compatibility matrix not bundled in the manufacturer datasheet.
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
The Texas Instruments LMG3422R030RQZT is a 600-V, 30-mΩ gallium nitride (GaN) FET with an integrated gate driver, protection, and temperature reporting, housed in a 54-pin VQFN (12x12 mm) package. It is designed for hard-switching power topologies and is qualified for JEDEC JEP180, ensuring reliable operation in demanding applications. The device integrates a high-precision gate bias voltage, enabling switching frequencies up to 2.2 MHz and slew rates from 20 V/ns to 150 V/ns, with a 200 V/ns FET hold-off capability. GaN FETs are a class of wide-bandgap power semiconductors that offer lower gate charge and faster switching than silicon MOSFETs, reducing switching losses and enabling higher power density. The LMG3422R030 integrates the driver and protection circuitry, simplifying design and improving reliability by minimizing parasitic inductance. This integration is part of a broader trend toward power management ICs that combine power stage and control for compact, efficient converters. Key features include integrated overcurrent and overtemperature protection, a temperature reporting pin, and adjustable gate drive strength. The device supports a wide input voltage range and provides clean switching with minimal ringing, as highlighted in the datasheet. The low-inductance package and integrated driver enable higher switching SOA compared to discrete solutions. The LMG3422R030 is ideal for applications such as server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers, where high efficiency and power density are critical. Its 600-V rating and 30-mΩ RDS(on) make it suitable for totem-pole PFC, LLC converters, and other hard-switching topologies. When designing with this device, ensure proper thermal management via the exposed pad and adequate PCB copper area. The integrated driver simplifies layout, but attention to gate drive loop and snubber design is recommended to minimize ringing. The device is available in tape and reel packaging, with pricing as of 2026-08-27.
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
The Texas Instruments LMG3522R030RQSR is a 650-V, 30-mΩ gallium nitride (GaN) FET with an integrated driver, protection, and temperature reporting, designed for high-efficiency power conversion. It comes in a 52-pin VQFN (12x12 mm) package with an exposed pad, enabling compact, high-density designs. The device integrates a half-bridge driver, making it ideal for hard-switching and soft-switching topologies such as totem-pole PFC, LLC, and active clamp flyback converters. GaN FETs are a class of wide-bandgap power semiconductors that offer significantly lower figure of merit (RDS(on) x Qg) compared to silicon MOSFETs, enabling higher switching frequencies and reduced switching losses. The LMG3522R030 integrates the gate driver, which simplifies layout and reduces parasitic inductance, a critical factor for high-speed switching. This integration also provides robust protection features including overcurrent protection, overtemperature protection, and temperature reporting via a digital output. Key features include a 650-V drain-source voltage rating, 30-mΩ typical RDS(on), and a 55-A continuous current rating. The integrated driver supports both high-side and low-side switches, and the device includes an interlock function to prevent shoot-through. The VQFN-52 package offers low thermal resistance, and the exposed pad aids in heat dissipation. The device is available in both standard and automotive (Q1) grades, with the Q1 variant qualified to AEC-Q100. Technically, the LMG3522R030 uses a GaN-on-Si process, which balances performance and cost. The integrated driver reduces external component count and minimizes gate-loop inductance, enabling faster switching transitions. The device supports a wide input voltage range and is designed for high-frequency operation, reducing magnetics size. The temperature reporting feature allows real-time monitoring, enhancing system reliability. Typical applications include server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers. The device's high efficiency and power density make it suitable for totem-pole PFC stages, where its low reverse recovery charge (Qrr) minimizes losses. In LLC converters, the integrated driver simplifies the half-bridge configuration. When designing with this device, ensure proper PCB layout with short, low-inductance paths for the gate drive and power loops. Use a dedicated ground plane and place decoupling capacitors close to the VCC and BST pins. The thermal pad must be soldered to a copper pour for effective heat sinking.
MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP
The NXP MD7P19130HR3 is a 1930-1990 MHz, 40 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for cellular base station power amplifiers. Housed in the NI-780-4 ceramic package (Case 465M-01, Style 1), the device delivers 20 dB power gain, 30% drain efficiency at 40 W Pout, and -36 dBc ACPR at 5 MHz offset under 3GPP W-CDMA single-carrier excitation with a 7.5 dB PAR input signal. A RF power MOSFET (also called RF power LDMOS transistor) is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. Within the amplifier hierarchy, RF power MOSFETs sit below GaN HEMTs and SiC MESFETs in raw power density per unit area, but offer the best cost-per-watt in sub-3 GHz macro/micro base-station transmitters. They integrate into Doherty, push-pull, and class-AB final stages where 30-50 V operation and high saturated drain current are required. Key performance highlights include a 28 V typical drain supply, an IDQ of 1250 mA quiescent bias, a frequency coverage of 1930 MHz to 1990 MHz (the entire 3GPP Band 1 / PCS downlink), 20 dB typical power gain, and 30% drain efficiency at rated Pout. The lateral N-channel enhancement-mode process is built on NXP's seventh-generation Airfast platform, which improves thermal resistance compared to older NI-780 variants. Typical applications include 3GPP Band 1 (IMT-2000 / PCS) macro base stations, micro/pico-cell W-CDMA power amplifiers, multi-carrier UMTS final stages, and broadband 1.8-2.0 GHz industrial transmitters. Designers favor this part for its integrated ESD protection and broadband matching stability across the full PCS uplink and downlink sub-bands. When designing with this device, ensure the heatsink spreader holds the case flange below 200 C with adequate airflow; the ceramic NI-780-4 flange is the primary thermal path and a minimum 4 oz copper footprint under the lead frame is required for proper RF grounding.
MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP
The NXP MD7P19130HSR3 is a 40 W average single-carrier W-CDMA lateral N-channel RF power MOSFET designed for base-station and wireless infrastructure power amplifiers operating from 1930 MHz to 1990 MHz. Built on NXP's HV7 (laterally diffused metal-oxide semiconductor, LDMOS) process, the device operates from a 28 V rail and delivers 20 dB typical power gain with 30% drain efficiency at Pout = 40 W, f = 1987.5 MHz, and IDQ = 1250 mA. It is housed in the NI-780S-4L ceramic-acet package (CASE 465M-01, STYLE 1) optimized for high-power RF output stages with a flanged ceramic lid that bolts directly to a heatsink or copper spreader. An RF power MOSFET is a lateral field-effect transistor optimized for high-frequency, high-power amplification in the megahertz-to-gigahertz range. RF power MOSFETs sit at the top of the power amplifier hierarchy (RF amplifier -> power amplifier -> RF front-end -> wireless base station) and are characterized by output power (W), gain (dB), drain efficiency (%), and adjacent-channel leakage ratio (ACLR, dBc). Compared with bipolar RF transistors, LDMOS offers higher gain, simpler biasing, better thermal stability, and intrinsic matching to 50 ohm systems. MD7P19130HSR3 is the WCDMA-optimized "S" suffix variant, distinguished by tighter linearity for 3GPP signal chains. Key features include 20 dB typical power gain at 1987.5 MHz, 30% drain efficiency at full output, -36 dBc ACPR at 5 MHz offset in 3.84 MHz W-CDMA channels, and a 7.5 dB peak-to-average ratio (PAR) handling capability. The device is designed for single-carrier operation and includes integrated ESD protection and a thermally enhanced ceramic package capable of dissipating the full 40 W average output continuously when mounted on an adequate heatsink. The 28 V drain bias simplifies integration with existing -48 V telecom plant topologies stepped down through a single DC-DC converter. The MD7P19130HSR3 is the recommended part for the Doherty final stage and single-ended PA in 1.93-1.99 GHz band (US PCS, UMTS band II) base-station radios. Designers also use it as a driver for higher-power LDMOS finals when additional output headroom is required. Mounting is straightforward but thermally demanding: the NI-780S-4L package must be bolted to a heatsink with thermal compound, and the RF leads form a 50 ohm microstrip interface. A complete bias sequence (VGGS on before VDDS) is required to prevent device damage, and the input/output match must be optimized for the target frequency sub-band for full W-CDMA ACLR compliance.
MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP
The NXP MD7P19130HSR5 is a 40 W RF power MOSFET designed for the 1.93 GHz to 1.99 GHz frequency range, supplied in an NI-780HS-4L ceramic package. It is an N-channel LDMOS (Laterally Diffused MOSFET) optimized as a final-stage amplifier for cellular base-station transmitters operating in the DCS / PCS / UMTS / LTE bands within that sub-2 GHz window. The device is rated for 28 V operation, delivers roughly 20 dB power gain at 1.99 GHz, and is specified to deliver a minimum of 40 W of CW RF output power, making it well-suited to high-power Doherty and conventional Class AB driver or final stages. An RF power LDMOS (Laterally Diffused MOSFET) is a specialized power transistor architecture that places the drain-current flow path laterally across the silicon die. This lateral structure gives LDMOS very high input impedance, excellent thermal performance, and superior gain-bandwidth product compared to vertical bipolar RF transistors, which is why LDMOS has become the dominant technology for sub-6 GHz cellular infrastructure. Within the broader taxonomy, the MD7P19130HSR5 belongs to RF & Wireless > RF Power Devices > LDMOS Power Transistors, sitting under the wider Discrete Semiconductors > Transistors > MOSFETs family tree. The MD7P19130HSR5 offers an output power of 40 W minimum in the 1.93-1.99 GHz band, a power gain of approximately 20 dB, and is built around NXP's hardened LDMOS process that includes integrated ESD protection and a high breakdown voltage. The hermetic NI-780HS-4L ceramic package provides low thermal resistance, allowing the device to be operated at full output power with conventional base-plate cooling. The transistor's broadband matching capability makes it suitable for both narrowband and multi-carrier GSM / W-CDMA / LTE signal formats used in modern cellular infrastructure. Typical applications include DCS1800 and PCS1900 base-station final stages, W-CDMA / 3GPP Node B power amplifiers, LTE small-cell and macro-cell transmitter outputs, and Doherty amplifier configurations where the MD7P19130HSR5 is paired with a smaller peaking amplifier. Its high gain reduces driver-stage complexity and lowers overall BOM cost in the RF chain. When designing with the MD7P19130HSR5, ensure the drain supply is well-bypassed close to the package flange and that the input/output matching networks are designed on a low-loss substrate such as Rogers RO4003C. Heat-sinking must keep the flange below the datasheet-recommended operating temperature to maintain long-term MTBF in always-on base-station service. For pricing and availability the MD7P19130HSR5 is normally stocked by NXP authorized distributors. Cross-reference the NXP product page for family variants and the distributor's parametric filters for similar 1.9 GHz / 40 W LDMOS options from other vendors such as Ampleon, Qorvo and Wolfspeed.
MHT1004GNR3 - 280W RF Power LDMOS, 2.45GHz | NXP Semiconductors
The NXP Semiconductors MHT1004GNR3 is a 300 W continuous-wave (CW) high-efficiency RF power LDMOS transistor designed for consumer and commercial cooking applications in the 2450 MHz ISM band. It delivers a typical power output of 280 W, a typical gain of 15.2 dB at 2450 MHz, and is specified for 32 V operation with a current rating of approximately 100 mA under test conditions. The device is housed in the OM-780-2 Gull-wing ceramic package. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized RF power MOSFET architecture that combines high power density, excellent gain, and good thermal performance with relatively low cost. RF power transistors sit within the power MOSFET family and are engineered specifically for high-frequency, high-power amplification — most often serving as the final stage in a transmit chain for radar, communications base stations, industrial/scientific/medical (ISM) equipment, and microwave heating systems. Key features of the MHT1004GNR3 include 300 W CW output power in the 2.45 GHz ISM band, 15.2 dB typical gain at 2450 MHz, a 65 V maximum drain-source voltage rating, and a rugged construction optimized for sustained high-CW operation. The high gain reduces the required driver-stage count, while the high power density simplifies thermal management when mounted to an appropriate heatsink. Architecturally, the MHT1004N/MHT1004GN family uses an N-channel enhancement-mode LDMOS structure optimized for high-efficiency Class-AB or Class-C operation. The combination of low parasitic capacitance and high breakdown voltage allows the part to be used in narrowband or broadband matching networks for industrial heating and microwave-oven magnetrons replacement designs. Typical applications include solid-state replacement of magnetrons in microwave ovens, industrial RF heating/drying equipment, plasma generation, and 2.45 GHz ISM-band scientific equipment. The 2450 MHz operating point is the globally allocated industrial/scientific/medical band, making the part a natural fit for any continuous-wave RF heating application. When designing with this part, ensure the heatsink thermal resistance is sized to keep the junction below the manufacturer's derating curve, and that the matching network presents the published load impedance at the fundamental and harmonic frequencies. Input matching should be optimized for maximum gain while output matching should target maximum efficiency at the desired output power, not necessarily maximum gain. This page synthesizes distributor pricing, parametric comparisons, and practical design notes for the MHT1004GNR3 not found together in any single manufacturer datasheet or distributor listing.
MHT1008NT1 - 12.5W RF LDMOS 2450MHz | NXP Semiconductors
The NXP Semiconductors MHT1008NT1 is a 12.5 W continuous-wave (CW) RF power LDMOS transistor designed for the 2450 MHz ISM band, housed in a ceramic PLD-1.5W (SOT1811) flanged power package. It operates at 28 V typical drain supply, delivers a typical power gain of 18.6 dB at 2450 MHz, and targets high-efficiency consumer and commercial microwave cooking equipment, solid-state RF energy applications, and industrial RF plasma drivers. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimized for high-frequency, high-power RF amplification. Within the broader taxonomy it sits under: LDMOS -> RF power MOSFET -> RF transistor -> discrete semiconductor. LDMOS parts became dominant in cellular base-station PA sockets because of high breakdown, high efficiency, and good thermal conductivity when mounted to a heatsink. The MHT1008NT1 leverages those same traits for 2.45 GHz microwave-energy applications rather than communications, where regulatory ISM-band operation and robust consumer-grade ruggedness matter more than linearity. Key features include an integrated ESD protection structure, stable operation into a 5:1 VSWR load mismatch, high drain efficiency at 28 V/12.5 W output, and a flanged ceramic package that bolts directly to a heatsink for ground-return thermal management. The device is N-channel enhancement-mode, so a positive gate bias above the threshold turns it on; no negative gate supply is required at idle. Architecturally the part uses a single-ended, internally matched input stage roughly tuned for the 2.4-2.5 GHz ISM band, simplifying the customer's PCB design - a 50 ohm interface with minimal external matching components is achievable. Operating at 28 V rather than the older 13.6 V rails used in early-generation cooking tubes significantly reduces current and copper losses in the cabinet wiring. Typical applications include consumer microwave ovens using solid-state RF generators instead of magnetrons, commercial-grade restaurant cooking appliances, industrial RF drying and plasma generation systems, and laboratory 2.45 GHz test amplifiers. Its 28 V operation makes it compatible with rectified industrial 24 V bus rails when filtered and boosted by a small PFC stage. A key design consideration: the PLD-1.5W flange MUST be bolted to a heatsink with proper thermal compound; the device dissipates tens of watts at full CW output, and derating begins at junction temperatures above 150 C. Also verify that the application circuit respects the datasheet's load-pull contours for best efficiency.
MHT1008NT1515 - 12.5W RF LDMOS 2450MHz ISM N-Channel | NXP
The NXP MHT1008NT1515 is a 12.5 W continuous-wave (CW), N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor tuned for the 2450 MHz industrial-scientific-medical (ISM) band. Housed in a PLD-1.5W (also documented as PLD-1) ceramic-and-metal RF flange package, it delivers approximately 20.9 dB typical gain at 2.45 GHz when biased from a 28 V supply, making it purpose-built for high-efficiency solid-state cooking, RF drying, and plasma-generation applications. RF power LDMOS transistors like the MHT1008NT1515 sit inside a broader power-semiconductor hierarchy that includes silicon bipolar RF transistors, GaN-on-SiC HEMTs, and SiC RF BJTs. Lateral MOSFETs in particular combine the high input impedance of MOSFETs with thermally robust ceramic packages, and they remain the dominant workhorse for sub-3 GHz continuous-wave power stages below ~50 W. The MHT1008 family is the 12.5 W tier above the lower-power MHT1007 and below higher-power 25 W–50 W siblings, occupying a sweet spot for compact consumer microwave ovens. Key specifications include 65 V minimum drain-source breakdown (V(BR)DSS), a 1.6 V gate threshold (VGS(th)), continuous drain current handling suitable for 12.5 W class-AB operation, and total power dissipation rated at 48.1 W with appropriate PCB cooling. The part is rated for junction temperatures from -40 °C to +150 °C, enabling harsh-environment industrial installations. A wide operating bandwidth around 2.4 GHz–2.5 GHz supports the full 802.11 b/g/n Wi-Fi-adjacent ISM band. Typical applications include solid-state consumer microwave ovens, RF plasma lighting drivers, industrial RF heating and drying, medical RF ablation at low power, and 2.45 GHz continuous-wave scientific instrumentation. The high gain reduces driver-stage complexity, and the lateral MOSFET architecture simplifies biasing versus bipolar alternatives that require regulated quiescent current. When designing with this device, ensure the drain bias network uses proper RF chokes and bypass capacitors per the reference design in the NXP datasheet, and that the thermal pad is soldered to a copper heat spreader. Avoid exceeding the 28 V typical operation maximum and maintain VSWR below 3:1 to prevent device stress. This page synthesizes distributor pricing, package information, and cross-brand perspective from public sources - all cross-referenced with the NXP MHT1008N datasheet - to help RF design engineers evaluate the MHT1008NT1515 for 2.45 GHz ISM power stages.
MIC94030BM4 - P-Channel 16V MOSFET, SOT-143 | Microchip
The Microchip MIC94030BM4 is a TinyFET P-Channel enhancement-mode MOSFET housed in a 4-pin SOT-143 (3+Tab) surface-mount package, delivering a continuous drain current of 1A with a drain-to-source voltage rating of 16V. Designed for high-side load-switch applications, it features a maximum on-resistance of 450 mOhm at VGS=-4.5V, providing low conduction losses in space-constrained portable designs. The 4-terminal architecture integrates the MOSFET die, gate, source, drain and an internal connection tab for thermal dissipation. A P-Channel MOSFET is a type of field-effect transistor in which the channel is formed by inverting the surface of an n-type semiconductor with a negative gate-to-source voltage (VGS). P-Channel devices are commonly used for high-side switching because they can be turned on by pulling the gate to ground, simplifying bootstrap drive circuitry compared to N-Channel high-side switches. They sit within the broader transistor taxonomy: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor. Their primary role in modern electronics is load switching, power gating, level shifting, and battery protection in portable and USB-powered systems. Key features of the MIC94030BM4 include a logic-level compatible gate threshold (typically requiring only -2.5V to fully enhance), a low-threshold variant suitable for direct microcontroller GPIO drive without level shifters, and an integrated body diode for inductive load handling. The SOT-143 package with the exposed tab offers an enhanced thermal path with a power dissipation rating of 568 mW (Ta) per the DigiKey listing, supporting compact PCB layouts. The device uses an advanced silicon-gate process technology that minimizes gate charge (Qg) and on-resistance product (FOM), enabling fast switching transitions with minimal drive losses. Its low input capacitance reduces the burden on the upstream GPIO pin and permits PWM-based dimming, current limiting, or power-rail sequencing at frequencies up to several hundred kHz. The architecture also tolerates wide gate-drive voltage ranges up to the absolute maximum VGS rating. Typical applications include USB port power switching in laptop and tablet designs, load management in battery-powered portable electronics such as smartphones and wearables, high-side switching for LCD backlight circuits, and power-rail gating for low-power subsystems in IoT devices. Its small footprint also suits space-constrained designs such as hearing aids, wireless earbuds, and remote sensor nodes. When designing with the MIC94030BM4, ensure the gate-source voltage stays within the absolute maximum ratings and use a pull-up resistor on the gate to guarantee the MOSFET defaults to OFF at power-up. For PWM operation above 10 kHz, verify that gate-charge losses remain within your thermal budget; otherwise consider a lower-Qg variant. This page synthesizes distributor pricing, drop-in alternatives from same-brand and cross-brand sources, and practical design notes not found in the manufacturer datasheet alone - giving purchasing and design engineers a single decision-ready reference.
MMBF170LT1 - 60V 500mA N-Channel MOSFET SOT-23 | onsemi
The onsemi MMBF170LT1 is a 60 V, 500 mA N-Channel enhancement-mode power MOSFET housed in a SOT-23-3 (TO-236) surface-mount package. It is built on a vertical DMOS process that minimizes on-state resistance and delivers superior switching performance for low-power signal-conditioning and driver applications. The device is rated for continuous drain current of 500 mA and pulsed drain current per the datasheet curve. A power MOSFET is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. The N-channel enhancement-mode type requires a positive gate-to-source voltage (VGS) above the threshold (typically around 1 V to 2 V) to turn on, and turns off when VGS returns to zero. Within the broader taxonomy, this part sits under discrete semiconductor -> MOSFET -> N-channel enhancement-mode -> small-signal/low-power MOSFET. Compared to bipolar transistors, MOSFETs offer higher input impedance, faster switching, and no gate current draw once the gate is charged. Key features of the MMBF170LT1 include a 60 V drain-to-source voltage rating (VDSS), a continuous drain current of 500 mA at TA=25°C with a 225 mW power dissipation rating, and a low-threshold gate drive that makes it compatible with 3.3 V and 5 V logic. The SOT-23 package keeps the footprint small for portable and high-density PCB designs, and the device is available on tape and reel for automated assembly. The internal construction uses DMOS cell technology to balance RDS(on) and switching losses. A low gate charge supports fast switching transitions in PWM and driver circuits, while the body diode enables use in low-side switching and level-shift topologies. The device is also designed to meet automotive-quality standards per the onsemi qualification flow. Typical applications include load switching in portable and battery-powered equipment, LED drivers, level shifters, signal gating, and small motor or relay drivers. Because of its 60 V rating, it is also used in 12 V and 24 V industrial bus switching where headroom is needed for transients. Designers commonly use it as an interface between microcontrollers and higher-power loads such as solenoids, lamps, and small DC motors. When designing with this part, observe the 225 mW power dissipation limit at TA=25°C and derate linearly to zero at the maximum rated junction temperature. Keep the gate drive rise/fall times fast to minimize switching loss, and place a gate-source resistor (typically 10 kΩ) on the gate to prevent unwanted turn-on from leakage or noise coupling. The exposed pad on SOT-23 packages is not present on this part, so thermal performance depends entirely on the drain, source, and gate lead copper area. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers can use the comparison table to evaluate pin-compatible substitutes, and the FAQ section answers the most common commercial, technical, and replacement questions.
MMRF1006HR5 - 1000W 50V RF Power MOSFET 10-500 MHz | NXP
The NXP Semiconductors (formerly Freescale) MMRF1006HR5 is a 1000 W lateral N-channel broadband RF power MOSFET rated 50 V, designed for pulsed and continuous-wave (CW) wideband applications across 10-500 MHz. Housed in the NI-1230H-4S ceramic package, it is a common-source, dual-element, surface-mount silicon MOSFET intended for use as a final-stage or driver in communications, radar, and industrial RF power amplifiers. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that excels at high-current, high-frequency switching. RF power MOSFETs, like the MMRF1006HR5, are specifically engineered with lateral geometries to deliver high gain, high efficiency, and broadband operation in the high-frequency (HF), very-high-frequency (VHF), and ultra-high-frequency (UHF) bands. They sit at the top of the power management hierarchy alongside IGBTs and GaN HEMTs, but dominate pulsed/CW sub-gigahertz broadband amplifier designs due to their ruggedness, ease of impedance matching, and stable thermal performance. Key features include 1000 W typical output power, 50 V drain-source breakdown voltage, 20 dB typical power gain at 450 MHz, and broadband matching from 10-500 MHz. The device is enhancement-mode and is specified for both CW and pulse operation, giving RF designers a single part for diverse duty-cycle requirements. The unmatched input and output allow flexible matching-network design across multiple frequency bands. The MMRF1006HR5 uses NXP's high-voltage lateral MOSFET process, optimized for high peak-current handling and low parasitic capacitance. Its common-source dual-element topology enables push-pull or balanced amplifier configurations, while the rugged silicon die construction supports high VSWR (Voltage Standing Wave Ratio) load-mismatch tolerance - critical for radar and industrial heating applications where reflected power can damage lesser devices. Typical applications include broadband HF/VHF/UHF communications amplifiers, pulsed avionics and military radar transmitters, industrial RF heating and drying equipment (27 MHz, 40 MHz, 81.36 MHz ISM bands), and Class C/D/E CW amplifier stages. The combination of broadband response and high power makes it suitable as a driver for higher-power devices in multi-stage transmitter chains. Key design considerations include adequate thermal management via the metal-flanged NI-1230H ceramic package, careful board-level impedance matching for the broadband RF path, and consideration of the device's gate-drive requirements. Designers should also evaluate safe operating area (SOA) limits when operating at high VSWR. According to the NXP datasheet, the device is specified for operation at 50 V VDD with suitable heatsinking. This page synthesizes distributor pricing across DigiKey, Mouser, Octopart, Xecor, and Nantian, plus drop-in alternatives and practical RF amplifier design notes not found in the manufacturer datasheet.