MOSFET
製品 (1294)
BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon
The Infineon BSP296NH6327XTSA1 is an N-Channel small-signal/small-power MOSFET rated for 100 V VDS and 1.2 A continuous drain current (Ta) in a 4-pin (3+tab) PG-SOT223-4 surface-mount package. As a member of Infineon's OptiMOS-equivalent small-signal family, it is qualified to AEC-Q101 for automotive use and is supplied on Tape & Reel with 1,000-piece standard packaging. The part is optimized as a low-loss, high-speed switch for general-purpose power management. An N-Channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-source voltage exceeds the threshold. Small-signal/small-power MOSFETs sit in the discrete-semiconductor hierarchy below power MOSFETs and are typically used for loads up to a few amps, where their low gate charge and fast switching edges enable efficient DC-DC conversion, level shifting, and high-side/low-side switching in compact surface-mount designs. Key electrical features include a 100 V drain-source breakdown rating, 1.2 A continuous drain current at 25 °C ambient, and a maximum on-resistance of 600 mΩ. The device dissipates up to 1.8 W at Ta=25 °C with a standard 1 oz copper pad, and its SOT-223 footprint provides a usable drain tab for thermal relief. The gate is standard threshold-level driven, allowing direct interface with 5 V microcontrollers and standard logic-level gate drivers without pre-driver circuitry. The BSP296N die uses an optimized trench cell geometry that minimizes RDS(on) * gate-charge figure-of-merit, balancing conduction loss and switching loss for sub-2 A loads. Its AEC-Q101 automotive qualification covers temperature range, humidity bias, and power-cycling stress, making it suitable for under-hood and chassis applications as well as industrial 24 V bus switching where 100 V drain headroom protects against inductive transients. Typical applications include relay and solenoid replacement in automotive body modules, DC-DC converter high-side switches, motor-driver bridges for small fans and pumps, load switches in industrial 24 V PLC systems, and LED driver stages. The 100 V rating also supports offline-derived auxiliary rails up to 60 V continuous and provides ample margin for flyback converter primary switching. When designing with this device, ensure the gate is driven fully enhanced (10 V recommended for lowest RDS(on)) and use a pull-down resistor to prevent unwanted turn-on during MCU reset. A gate-series resistor of 10-100 Ω controls ringing and limits inrush dV/dt. For thermal reliability at 1 A continuous load, allocate at least 100 mm² of 1 oz copper on the drain tab. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the Infineon datasheet alone, accelerating part selection and PCB layout for new designs.
BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon
The Infineon BSP315PH6327XTSA1 is a P-channel enhancement-mode power MOSFET built on Infineon's OptiMOS process, rated for -60 V drain-source voltage and -1.17 A continuous drain current, housed in a PG-SOT223-4 surface-mount package. Designed for low-voltage load switching and small-signal power management, the device delivers an on-state resistance in the single-ohm range at -10 V gate drive, making it efficient for battery-powered and USB-rail applications. The part dissipates 1.8 W at the package ambient temperature limit and supports surface-mount assembly on standard FR4 boards. A P-channel MOSFET is a field-effect transistor in which the conducting channel forms when a negative gate-source voltage is applied, allowing the device to source current from a positive supply rail to a load referenced to ground without requiring a charge pump or high-side driver. P-channel MOSFETs sit within the broader hierarchy of MOSFETs -> transistors -> discrete semiconductors -> active components. They are widely used as high-side switches because their gate can be driven directly from a logic-level signal pulled to ground, simplifying bootstrap and level-shifting circuitry that would otherwise be required for an N-channel high-side switch. Key features of the BSP315PH6327XTSA1 include a low threshold voltage suitable for direct 3.3 V and 5 V logic-level gate drive, low gate charge for fast switching transitions, an avalanche-rated body diode for inductive loads, and RoHS-compliant lead-free PG-SOT223-4 packaging with an exposed drain tab for improved thermal dissipation. The OptiMOS process delivers a strong figure-of-merit (RDS(on) x Qg) that minimizes conduction and switching losses simultaneously. Technically, the device uses Infineon's planar-cell OptiMOS P-channel technology, which combines a low on-state resistance per unit area with tight parametric distribution for parallel-operation stability. The PG-SOT223-4 footprint exposes the drain tab, allowing the PCB copper pour itself to act as a heatsink and providing a thermal path to the load-side copper. Typical applications include USB power switching, load management in battery-powered portable electronics, high-side switching in industrial control modules, motor and solenoid reverse-polarity protection, and DC-DC converter synchronous rectifier stages. The wide -60 V rating provides substantial headroom for 12 V and 24 V automotive bus transients. When designing with this part, ensure that the gate-source voltage does not exceed the ±20 V maximum rating and add a gate-source pull-down resistor to hold the MOSFET off during MCU reset. For switching inductive loads, place a TVS diode or freewheeling clamp across the load to limit drain-voltage spikes within the avalanche rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
The Infineon BSP316PH6327XTSA1 is a P-Channel enhancement-mode Power MOSFET rated at -100 V VDS and -680 mA continuous drain current (at TA=25C), with a maximum power dissipation of 1.8 W (TA) housed in a surface-mount PG-SOT223-4 (TO-261-4) package. Built on Infineon's proven SIPMOS small-signal MOSFET process, it is designed for use as a high-side or low-side load switch in 48 V telecom rails, industrial automation, and battery-protection circuits where a low on-resistance P-channel device simplifies gate drive by referencing the source to the load rather than ground. A P-channel MOSFET (P-FET) is a type of metal-oxide-semiconductor field-effect transistor whose conducting channel is formed by p-type dopants, so the device turns on when the gate is pulled below the source. In the MOSFET taxonomy (MOSFET -> transistor -> discrete semiconductor -> semiconductor), P-FETs are the complementary counterpart to N-FETs and are preferred for high-side switching because they require only a ground-referenced gate driver, eliminating the need for a charge pump or bootstrap circuit. The BSP316P belongs to Infineon's OptiMOS-compatible SIPMOS family, optimized for low gate charge and robust avalanche energy. Key specifications include a typical on-resistance in the single-digit ohm range at VGS=-10V, a gate threshold voltage compatible with 3.3 V and 5 V logic-level drive, and an avalanche-rated single-pulse body diode. The SOT-223 (TO-261-4) footprint provides a center drain tab that doubles as a thermal pad, supporting 1.8 W dissipation when the tab is soldered to at least 100 mm^2 of 2 oz copper pour. This makes the part suitable for space-constrained designs that still need reasonable continuous-current handling. Typical applications include reverse-polarity protection in industrial controllers, high-side load switching in 24 V and 48 V systems, USB power-distribution switches, and battery-discharge control in handheld instruments. The -100 V rating also gives significant transient headroom above nominal 48 V rails, allowing the device to survive inductive kick and lightning-induced surge events within its avalanche rating. When designing with this device, ensure the gate is actively pulled to the source potential during shutdown to prevent accidental turn-on from Miller coupling, and verify that the PCB thermal pad is soldered to a copper area sized to keep the junction below 150 C at the worst-case ambient. The H6327 suffix indicates Tape-and-Reel packaging with 1,000-piece reels per EIA-481. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSP320SL6327 - 60V N-Channel MOSFET | Infineon
The Infineon BSP320SL6327 is a 60 V N-channel power MOSFET with a listed 2.9 A drain current, 0.12 ohm on-resistance, and a 1.8 W maximum power dissipation in a surface-mount SOT-223 package. The device is identified as a single MOSFET with a built-in diode and metal-oxide semiconductor field-effect transistor technology. These ratings make it a candidate for low-voltage switching, load-control, and industrial-control circuits where a 60 V drain rating provides useful transient margin. A MOSFET is a voltage-controlled semiconductor switch. An N-channel MOSFET is especially useful in low-side switching because its low-side gate-drive arrangement can provide efficient conduction and straightforward logic control. In the broader hierarchy, this device belongs to discrete semiconductors, then transistors, then MOSFETs. Its built-in body diode can provide a controlled reverse-current path in inductive or half-bridge circuits, subject to the application-specific switching and recovery requirements. The key verified characteristics are its 60 V operating voltage, 2.9 A specified drain current, 0.12 ohm maximum drain-source on-resistance, and 1.8 W absolute maximum power dissipation. The listed package is a four-pin SOT-223 configuration with three leads plus a tab. The web references also identify avalanche capability and specify metal-oxide semiconductor technology. Detailed gate charge, threshold voltage, junction-temperature limits, and thermal-resistance values are not present in the supplied data and should be confirmed from the manufacturer datasheet before design release. Typical uses include low-side motor and relay drivers, 60 V industrial control interfaces, DC power-conversion stages, and auxiliary switching circuits. The tab provides the electrical drain connection and also acts as a heat-spreading land when the PCB is designed correctly. Gate drive, source return, copper area, and thermal performance remain central design considerations. For a new design, place the device close to its switching load, provide a low-impedance gate resistor, and keep high-current source and drain paths compact. Do not treat the 2.9 A rating as independent of package temperature or PCB copper. Verify the exact thermal conditions and repetitive-pulse limits from the manufacturer datasheet. This page combines verified distributor and manufacturer-linked technical data, application guidance, design notes, and a transparent data-quality review. It does not invent missing electrical limits, pricing, lifecycle assumptions, or cross-brand equivalents.
BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon
The Infineon BSP88H6327XTSA1 is an N-channel SIPMOS small-signal enhancement-mode MOSFET rated at 240 V drain-source voltage and 350 mA continuous drain current, housed in a 3-pin surface-mount PG-SOT223-4 (also described as SOT-223-3) package with 1.8 W power dissipation at Ta=25 C. The device is qualified to AEC-Q101 for automotive use, ships with Pb-free lead plating, and is fully RoHS compliant, making it suitable for both automotive and industrial switching loads. An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch where a positive gate-source voltage VGS creates a conducting channel between drain and source. Small-signal MOSFETs in the BSP family are optimized for low-current switching and level-shifting rather than power conversion, sitting below power MOSFETs in the discrete semiconductor hierarchy: MOSFET -> small-signal transistor -> discrete semiconductor -> semiconductor. Key electrical features include a typical on-state resistance of approximately 6 ohms at VGS=10 V, a logic-level capable gate threshold typically in the 1 V to 2 V range, and a thermally efficient SOT-223 tab that doubles as the drain connection. Compared with DPAK alternatives, the SOT-223 footprint allows hand-solderable assembly while still dissipating up to 1.8 W on a modest copper area. The device uses Infineon's SIPMOS planar cell technology, providing fast switching, low gate charge, and excellent ruggedness against avalanche transients. The integrated body diode simplifies inductive load driving without external freewheeling components in low-frequency applications. Typical applications include automotive relay replacement, low-side switches for indicator lamps and solenoids, level shifters between 3.3 V microcontrollers and 12 V or 24 V loads, and generic line-side switching in industrial control. It is a popular alternative to bipolar Darlingtons in 12 V automotive subsystems because it does not require continuous base current and therefore reduces quiescent draw. When designing with this part, place a 100 ohm gate series resistor to dampen ringing and protect the microcontroller GPIO from inrush current, and ensure the SOT-223 tab is soldered to at least 6 cm squared of copper on the PCB to keep the junction within the 150 C maximum rating at full 1.8 W dissipation. This page synthesizes distributor pricing, qualified drop-in alternatives, and practical design notes drawn from the Infineon BSP88 datasheet, providing engineering context that goes beyond the bare parametric table.
BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon
The Infineon BSP89H6327XTSA1 is a SIPMOS small-signal N-Channel enhancement-mode MOSFET rated at 240 V drain-source breakdown voltage and 0.35 A continuous drain current (Ta=25°C), housed in a 4-pin PG-SOT223 surface-mount package with an exposed thermal tab. It features a logic-level gate drive (VGS(th) in the low-volt range) and a typical on-resistance of 6 Ω, making it suitable for low-current switching at high voltages where a small signal MOSFET is needed. What is a SIPMOS small-signal MOSFET? A SIPMOS (Siemens/Infineon Power MOS) small-signal MOSFET is a single-transistor power MOSFET built on Infineon's planar SIPMOS process, optimized for low-current switching applications (typically under 1 A). It belongs to the broader category of N-Channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The 'small-signal' designation means it trades off high-current handling for compactness, low gate charge, and easy logic-level drive. This class of device is commonly used as a high-side switch, level shifter, or driver for relays and optocouplers in industrial and automotive control circuits. Key features of the BSP89 include a 240 V V(BR)DSS rating, logic-level VGS(th) for direct microcontroller interface, avalanche-rated single-pulse body diode, and an integrated drain tab for improved thermal dissipation. The PG-SOT223 package provides a thermal resistance (RthJA) of 70 K/W on a 6 cm² cooling footprint, enabling 1.8 W power dissipation on standard FR4 PCB. The 'H6327' ordering code indicates 1000-piece tape-and-reel packaging and AEC-Q101 automotive qualification, making the part suitable for both industrial and automotive-grade designs. The device uses Infineon's mature SIPMOS planar cell technology, delivering robust dv/dt immunity and stable threshold voltage across the -55 °C to +150 °C junction temperature range. The internal Zener between gate and source protects against ESD events up to typical HBM levels. Typical applications include high-side switches in 24 V industrial bus systems, relay and solenoid drivers in automotive body electronics, LED driver stages, and interface level shifters between 3.3 V microcontrollers and 24 V/48 V loads. The 240 V rating also makes it a candidate for offline power supply auxiliary circuits and small motor control. When designing with this part, observe the maximum continuous drain current of 0.35 A and derate appropriately at elevated ambient temperatures. The exposed tab (pin 4) must be soldered to a sufficient copper area to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives (same-brand Infineon SIPMOS family), and practical design notes not found in the manufacturer datasheet.
BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
The Infineon BSP92PH6327XTSA1 is a P-channel enhancement-mode power MOSFET rated for -250 V drain-source voltage and -260 mA continuous drain current, dissipating up to 1.8 W in the surface-mount PG-SOT223-4 (SOT-223-4) package. It belongs to Infineon's OptiMOS small-signal P-channel family, targeting high-side switching where a low-side gate reference is preferred. A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. It sits in the broader hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor -> active electronic component. P-channel devices are commonly used for high-side load switching because their source sits at the load supply rail, allowing the gate to be driven relative to ground with a simple logic-level signal and no bootstrap circuit. Key specifications include a gate threshold voltage typically in the -1 V to -2.5 V range, very low gate charge suitable for direct microcontroller GPIO drive, and an avalanche-rated single-pulse body diode. The SOT-223-4 package provides a tab that acts as an additional drain thermal pad (with the exposed lead tied to the drain), reducing thermal resistance versus the smaller SOT-23 footprint. This makes the part usable in applications that would overheat a SOT-23 P-MOSFET of similar on-resistance. Architecturally, the device uses Infineon's planar OptiMOS cell technology optimized for low-voltage gate drive and high drain blocking voltage in the same die. Compared with N-channel counterparts, the trade-off is higher on-state resistance (RDS(on)) per unit silicon area, but the benefit is simplified high-side load switching without charge pumps or level shifters. Typical applications include 48 V telecom and industrial bus high-side switches, power-rail OR-ing, battery protection in portable and e-mobility systems, motor and solenoid driver low-side complements, and general-purpose DC load management in industrial controls. When designing, confirm the tab/drain thermal pad is soldered to a sufficient copper pour; with 1.8 W rating this part requires more board copper than a SOT-23 equivalent to stay within thermal limits at full continuous current. This page synthesizes distributor pricing for the Infineon BSP92PH6327XTSA1, sourced drop-in alternatives, and practical PCB/thermal design notes that complement the manufacturer datasheet.
BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon
The Infineon BSR315PH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS platform, rated for -60 V VDS, -620 mA continuous drain current (Ta), and 500 mW power dissipation in a 3-pin PG-SC59 / SOT-23-3 surface-mount package. It is part of Infineon's highly innovative OptiMOS P-channel family designed for high-quality power management in space-constrained designs. A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by hole conduction rather than electron conduction. In a typical enhancement-mode P-channel device the gate must be pulled below the source to turn the device on. P-channel MOSFETs occupy the same role as N-channel MOSFETs in circuit topology (low-side or high-side switches, load switches, level shifters) but they are particularly useful for high-side switching because they can be driven from a low-voltage gate signal referenced to the system ground, eliminating the need for a charge pump or bootstrap circuit. P-channel MOSFETs are widely used as load switches, in battery protection, USB power switching, and reverse-polarity protection. The BSR315P offers a typical on-state resistance (RDS(on)) of approximately 800 mOhm at -620 mA and -10 V VGS, a gate threshold voltage in the ±20 V VGS range, and an input capacitance of about 176 pF at 25 V. The OptiMOS process achieves low on-resistance per silicon area and fast switching, suiting both linear and saturated switching applications. With a continuous drain current of 620 mA at 25 C ambient and a maximum junction temperature of 150 C, the part balances compact SOT-23-3 packaging with usable power handling when properly derated. The PG-SC59 / SOT-23-3 footprint uses industry-standard 3-pin SMD pinout (GATE / SOURCE / DRAIN), so the part drops directly into standard P-channel SOT-23-3 land patterns designed for similar-rated devices. Tape-and-reel packaging (H6327 suffix) supports high-volume automated assembly. Operating temperature range is -55 C to +150 C junction. Typical applications for the BSR315PH6327XTSA1 include high-side load switching in battery-powered portable equipment, USB power-distribution switches, reverse-polarity / reverse-discharge protection in charger circuits, power-rail OR-ing, and level translation. The 60 V rating provides substantial transient headroom for 12 V automotive and industrial buses. When designing with this part, observe that RDS(on) is specified at -10 V VGS; the device does not fully enhance at logic levels (3.3 V or 5 V). Use a gate-driver transistor or pull the gate to a sufficiently negative rail to ensure low-loss operation, or add a small charge pump if a logic-level gate drive is required. Provide adequate copper pour at the SOURCE tab (pin 2) for thermal dissipation, and derate continuous drain current with ambient temperature per the SOA curve in the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSR315PH6327XTSA1 not found in the manufacturer datasheet alone, providing engineers with an at-a-glance comparison against same-brand and cross-brand drop-in equivalents.
BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon
The Infineon BSR316PH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS technology, delivering -100V VDS, -360 mA continuous drain current (at TA), and a maximum on-state resistance of 1800 mOhm in a 3-pin SC-59 (PG-SC59-3) surface-mount package. It is qualified for automotive applications and ships on tape-and-reel for high-volume SMT assembly lines. A P-channel MOSFET is a voltage-controlled field-effect transistor whose majority carriers are holes, allowing it to be turned on by pulling its gate voltage below the source. Designers prefer P-channel parts when a high-side load switch must be driven with a ground-referenced logic signal, eliminating the need for a bootstrap or charge-pump gate driver required by N-channel equivalents. Within the broader discrete-semi taxonomy, the BSR316P belongs to the small-signal MOSFET family, which sits between digital logic transistors and high-current power MOSFETs in terms of voltage, current, and power handling. Key electrical characteristics include a gate threshold voltage typically around -1.7 V (max -2.5 V), fast switching behavior enabled by low gate charge, and a power dissipation rating of 500 mW at TC. The 100V VDS rating provides substantial headroom for switching 12V, 24V, and 48V rails, while the 1800 mOhm RDS(on) keeps conduction losses low enough for continuous 360 mA operation in compact, fan-less enclosures. OptiMOS process technology combines a vertical trench cell structure with optimized silicon geometry to balance RDS(on), gate charge (Qg), and figure-of-merit (FOM). The result is a MOSFET that switches cleanly with low EMI, making it suitable for sensitive analog and mixed-signal subsystems. The SC-59 footprint is industry-standard for three-pin small-signal MOSFETs, easing PCB layout reuse across product variants. Typical applications include high-side load switching in industrial control modules, reverse-polarity protection circuits on battery-powered equipment, DC-DC converter synchronous-rectifier sections, motor-driver H-bridge high-side switches, and general-purpose power management in automotive body electronics, telecom hardware, and consumer devices. When designing with this part, pay close attention to gate-drive voltage headroom and ensure VGS does not exceed +/- 20V. For PWM applications above 50 kHz, confirm that total gate charge fits within the driver's current capability to avoid excessive switching losses. This page synthesizes authorized distributor pricing, verified drop-in alternatives, and practical PCB design notes not consolidated on the Infineon datasheet cover page.
BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
The Infineon BSR802NL6327HTSA1 is an N-channel small-signal power MOSFET built on Infineon's OptiMOS 2 technology, rated at 20 V VDS and 3.7 A continuous drain current, housed in a 3-pin PG-SC59 (SOT-23 equivalent) surface-mount package with 500 mW power dissipation. What is a small-signal MOSFET? A small-signal power MOSFET is a metal-oxide-semiconductor field-effect transistor designed for low-to-medium current switching applications. It belongs to the broader discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. These devices serve as the workhorses of low-voltage power conversion, providing fast switching, low on-resistance, and minimal gate drive requirements compared to bipolar transistors. Key features include a maximum drain-source voltage of 20 V, continuous drain current of 3.7 A at TA=25C, and an ultra-low typical on-resistance of 23 mOhm at VGS=4.5 V. The OptiMOS 2 process delivers excellent switching performance with low gate charge and low reverse recovery charge, making it well suited for high-frequency DC-DC converter and load-switch topologies. The device is qualified to automotive standards and operates across the industrial -55C to +150C junction temperature range. The BSR802N uses Infineon's advanced trench MOSFET cell architecture to minimize conduction and switching losses simultaneously. The SC-59 (SOT-346) footprint is a low-profile SMD package widely used where board space is at a premium, offering a thermal pad connection for moderate heat-sinking via copper pours. Typical applications include DC-DC converter primary-side switching, load switches in battery-powered portable devices, power management modules in notebooks and tablets, USB power distribution, and motor drive low-side switches in small actuators. The automotive qualification makes it suitable for body electronics, infotainment, and ADAS peripheral rails. When designing with this part, ensure that VGS is driven to 4.5 V or higher for full enhancement and minimum Rds(on). The PG-SC59-3 package has limited thermal dissipation (500 mW at TA=25C), so for continuous high-current operation above 2 A, a substantial copper area on the PCB is required to maintain junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives from Infineon's OptiMOS portfolio and competitor offerings, and practical PCB layout guidance not found in the manufacturer datasheet alone.
BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon
The Infineon BSS119NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V VDS, 190 mA continuous drain current (at TA=25°C), and 500 mW power dissipation, supplied in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. Built on Infineon's OptiMOS™-equivalent planar N-channel process, it is qualified to AEC-Q101 for automotive applications and optimized as a low-current load switch, level shifter, and signal-conditioning device. What is an N-channel small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching and analog signal routing rather than high-power conversion. It belongs to the broader metal-oxide-semiconductor FET (MOSFET) family and the discrete-semiconductor hierarchy, sitting between signal-level amplifier transistors and power MOSFETs. Small-signal N-channel MOSFETs such as the BSS119N are widely used for high-side or low-side switching in 12 V and 24 V automotive and industrial rails where a logic-level gate can fully enhance the channel. Key features of the BSS119N include a maximum drain-source on-resistance of 6 Ω typical at VGS=10 V, a gate threshold voltage typically in the 0.8 V to 1.8 V range, and low gate charge that enables fast switching at audio and baseband frequencies. The SOT-23-3 footprint is industry-standard, which allows PCB reuse across many Infineon, onsemi, and Diodes Incorporated N-channel parts. The part is supplied on tape-and-reel for high-volume automated assembly and is RoHS-compliant. Technically, the device uses Infineon's mature planar N-channel technology and a logic-level-compatible threshold so that 5 V microcontrollers can drive the gate directly without a charge pump. The 100 V VDS rating provides substantial headroom over 12 V automotive and 24 V industrial rails, suppressing transient ringing and inductive kickback. The 190 mA continuous drain rating is sufficient for relay coils, small solenoids, signal-line multiplexing, and LED strings. Typical applications include automotive load switching (lamp drivers, relay drivers, small motor control), industrial 24 V sensor multiplexing, battery-protection discharge FETs in low-current packs, level shifters between 3.3 V logic and 12 V buses, and signal-line multiplexing in test equipment. Designers value the part for its automotive-grade reliability and small PCB footprint. When designing with the BSS119N, ensure that the gate is pulled low during power-up with a 100 kΩ resistor to prevent accidental turn-on from floating-gate leakage currents on noisy rails. Limit switching frequency to a few hundred kHz if the part is used in PWM applications to keep switching losses and EMI low. This page synthesizes distributor pricing, automotive-grade context, drop-in alternatives in the SOT-23-3 footprint, and practical PCB design notes that are not consolidated in the manufacturer datasheet.
BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon
The Infineon BSS123IXTSA1 is a 100 V N-channel small-signal OptiMOS MOSFET rated for 190 mA continuous drain current (at TA=25C) with 500 mW power dissipation, packaged in a 3-pin PG-SOT-23-3 surface-mount outline. It is built on Infineon's OptiMOS small-signal process and is qualified for industrial environments, making it well suited for high-density switching in compact modules. A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching, level shifting, and analog signal routing rather than for power conversion. Within the broader semiconductor taxonomy, the BSS123I belongs to the MOSFET family (metal-oxide-semiconductor field-effect transistor), which itself sits under discrete semiconductors and power-management switching devices. Small-signal N-channel MOSFETs like this one are commonly used as low-side switches, in driver stages, in DC-DC converter peripheral circuitry, and in load- and interface-switching applications where the load current does not exceed a few hundred milliamps. Key electrical features of the BSS123IXTSA1 include a 100 V drain-source breakdown voltage, a typical on-resistance (RDS(on)) of about 2.4 ohm at VGS=10 V (with a maximum of 6 ohm per the family datasheet), and a low gate threshold voltage that allows direct 3.3 V or 5 V logic-level drive. The device is housed in the industry-standard SOT-23-3 footprint, providing excellent thermal coupling to the PCB copper pour and enabling reflow-compatible surface-mount assembly. The OptiMOS process technology used in this part delivers a clean, well-controlled transfer characteristic and tight threshold-voltage distribution, which simplifies parallel-device use and ensures predictable switching behavior across temperature. The combination of low gate charge, low input capacitance, and fast switching edges makes the BSS123IXTSA1 a practical choice for high-frequency small-signal paths. Typical applications include low-side switching in battery management and power-path controllers, level-shifters between 1.8 V/3.3 V logic and 12 V/24 V loads, signal multiplexing in instrumentation and test equipment, and discrete driver stages for relays, LEDs, and small solenoids. The 100 V rating provides ample headroom for 12 V and 24 V industrial buses. When designing with the BSS123IXTSA1, observe the 500 mW power dissipation limit of the SOT-23 package and derate appropriately above 25C ambient. For pulse loads, the safe operating area defined in the Infineon datasheet should be respected. Use a gate-source pull-down resistor to prevent inadvertent turn-on during MCU reset. This page combines verified distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to support component selection, sourcing, and PCB-level integration.
BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon
The Infineon BSS123NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V drain-source voltage and 190 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package with 500 mW power dissipation. It belongs to Infineon's BSS123N automotive-qualified family, qualified to AEC-Q101 and RoHS compliant with Pb-free lead plating, making it suitable for both commercial and automotive-grade designs. A small-signal N-channel MOSFET (also called an N-channel enhancement-mode FET or N-FET) is a voltage-controlled transistor that uses a positive gate-to-source voltage to create a conductive channel between drain and source. Within the semiconductor taxonomy, this places it as: small-signal MOSFET -> power MOSFET -> discrete semiconductor -> transistor. These devices are the workhorses of low-power switching, level shifting, and high-side / low-side load driving, where their high input impedance and fast switching make them far more efficient than bipolar transistors at small currents. Key features of the BSS123NH6327XTSA1 include a maximum drain-source on-resistance of 6 Ω at VGS = 10 V, a low threshold voltage compatible with 5 V and 3.3 V logic-level gate drive, and an integrated ESD protection diode on the gate. The SOT-23-3 footprint is a de facto industry standard shared by virtually every small-signal N-FET family, enabling PCB layout reuse across many manufacturers. Automotive AEC-Q101 qualification makes the part suitable for under-hood and body-electronics applications where supplier change control and reliability are required. Architecturally, the BSS123NH6327XTSA1 uses a planar DMOS cell structure optimized for low gate charge (Qg typically around 0.8 nC) and fast switching, with a body-drain diode and an ESD clamp built into the gate pad. The 100 V BVdss rating provides generous margin for 12 V and 24 V automotive buses, while the 6 Ω RDS(on) keeps conduction loss manageable at sub-200 mA loads. Typical applications include load switching in battery-powered IoT devices, level shifters between 3.3 V microcontrollers and 12 V peripherals, high-side driver stages for LEDs and relays, and USB / HDMI port power switching. It is also widely used as a flyback or freewheeling switch in small DC-DC converter blocks. When designing with this device, observe the 500 mW Ta power dissipation limit and derate output current above 70 °C ambient. Gate-source voltage must remain below the absolute maximum of ±20 V, even though logic levels (3.3 V / 5 V) are sufficient to fully enhance the channel. The SOT-23-3 thermal pad is pin 2 (drain), so PCB copper area on the drain node doubles as a heatsink. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single source for selection.
BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon
The Infineon BSS126H6327XTSA2 is a 600 V N-channel depletion-mode SIPMOS small-signal MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. It is rated for a continuous drain current of 21 mA (Ta) with a power dissipation of 500 mW (Ta), and a maximum on-resistance of 500 ohm (typical for the depletion mode). Unlike enhancement-mode MOSFETs, the BSS126 is normally-on at zero gate-source voltage, making it uniquely suited to startup, protection, and analog reference roles. A depletion-mode MOSFET is a field-effect transistor whose channel is physically present at fabrication; conduction is maximum when VGS = 0 and the channel is progressively pinched off as VGS is driven more negative (for an N-channel device). This category sits within the broader MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) family, which in turn belongs to power management and discrete semiconductors. Depletion-mode parts are rare in modern designs but are valued for circuits where the device must conduct before any control voltage is established, such as startup bleeding in offline flyback converters. Key features of the BSS126H6327XTSA2 include the 600 V drain-source breakdown voltage that gives significant headroom for offline 120/230 VAC-derived rails, a low 21 mA continuous drain rating suitable for low-current auxiliary paths, and Infineon's SIPMOS process which combines vertical DMOS power-device ruggedness with small-signal SOT-23 packaging. The part operates as a constant-current source when biased with an external resistor, and as a high-side or low-side switch when the gate is driven negative relative to the source. Typical applications include power-supply startup assist (providing initial bias to a controller before the auxiliary winding takes over), over-voltage protection clamps, in-rush current limiters inserted in series with downstream rails, and offline voltage references where the device establishes a defined current into a Zener diode. Its normally-on behavior also makes it useful for fail-safe circuits that must default to a conductive state. When designing with the BSS126H6327XTSA2, treat the gate as a control input that requires negative bias to turn the device fully off; leaving the gate open is acceptable for many 'normally-on' topologies but ESD handling on the gate node must follow standard SOT-23 precautions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon
The Infineon BSS127H6327XTSA2 is a logic-level N-channel SIPMOS small-signal enhancement-mode MOSFET rated at 600 V VDS and 21 mA continuous drain current, packaged in the 3-pin SOT-23 (PG-SOT23) surface-mount outline. The H6327 suffix denotes the 7-inch reel packaging code and the XTSA2 ordering suffix identifies the AEC-Q101 automotive-qualified variant of the BSS127 family. Key features include a logic-level gate drive threshold of 4.5 V, dv/dt ruggedness, very low on-state resistance of 500 ohm typical at 21 mA, and 100% lead-free, RoHS-compliant, halogen-free construction per IEC 61249-2-21. A small-signal MOSFET is a metal-oxide-semiconductor field-effect transistor scaled for low-current switching and analog signal conditioning, occupying the boundary between discrete discrete semiconductors and power-management ICs. SIPMOS (Siemens/Infineon Power MOS) is Infineon's planar vertical-DMOS process family optimized for high breakdown voltage and fast switching in compact surface-mount packages. Within the broader taxonomy, the BSS127 sits at: N-channel MOSFET -> small-signal MOSFET -> discrete semiconductor -> power semiconductor, serving as a building block in low-current high-voltage analog front ends. The BSS127's 600 V drain-source breakdown and 4.5 V VGS(th) make it ideal for direct microcontroller or 5 V logic interface in solid-state relay (SSR) front-ends, high-side bootstrap drivers, and line-side voltage clamps. Its SIPMOS construction provides a low Crss/Ciss ratio that simplifies gate-drive timing and minimizes shoot-through losses in half-bridge or totem-pole stages. The 21 mA continuous current rating suits signal-level loads such as optocouplers, low-power relays, and piezo transducers, while the 500 mW power rating limits pulsed dissipation to short-duration switching events. Typical applications include solid-state relay (SSR) input/output stages, high-voltage signal multiplexing, line-voltage interface circuits in white goods and industrial controls, automotive sensor interfaces, and as a low-side switch in flyback or buck converter housekeeping blocks. The AEC-Q101 automotive qualification supports deployment under-the-hood and in body-electronics modules operating across -40 C to +150 C junction temperature. When designing with the BSS127, gate-source protection with a 10 kohm pull-down resistor is recommended to prevent inadvertent turn-on from dv/dt coupling. Total gate charge Qg should be sourced from a sufficiently stiff driver to keep switching losses bounded; consult the manufacturer's datasheet for the typical application circuit and thermal derating curves. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS138L - 50V 200mA N-Channel MOSFET SOT-23 | onsemi
The onsemi BSS138L is an N-channel enhancement-mode small-signal power MOSFET rated for 50 V drain-source voltage, 200 mA continuous drain current (Ta), and 350 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. A MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device within the broader family of transistors and discrete semiconductors. Small-signal MOSFETs like the BSS138L occupy the low-power end of the power MOSFET hierarchy, sitting between general-purpose bipolar junction transistors and larger medium-power SOT-223/DPAK devices. Because the gate is isolated by an oxide layer, the device draws essentially zero DC gate current, allowing direct drive from microcontroller GPIO pins and logic-level 3.3 V or 5 V signal sources. Key features include trench MOSFET technology that minimizes on-state resistance (approximately 3.5 ohms RDS(on) at 10 V gate drive), logic-level gate threshold enabling direct 3.3 V/5 V drive, rugged and reliable fast-switching performance, and the compact industry-standard SOT-23 footprint that keeps board area under 3 mm x 3 mm including pads. Technically, the BSS138L is produced using onsemi high-cell-density trench MOSFET technology, which increases channel density per die area, reducing RDS(on) while preserving fast switching transition times well suited to PWM loads. The enhancement-mode structure means the device is OFF at zero gate-source voltage and turns ON with a positive gate voltage above threshold, simplifying level-shifting and load-switch circuits in mixed-voltage systems. Typical applications cited by onsemi include DC-DC converters and power management in portable, battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones. It is also widely used as a level shifter between 3.3 V and 5 V logic domains and as a low-side load switch for LEDs, relays, and sensors. Design consideration: with a 3.5 ohm on-resistance, conduction loss at the full 200 mA rating is roughly 0.14 W (I2R estimate), a meaningful fraction of the 350 mW package limit, so derating at elevated ambient temperatures is advisable. This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical design notes in one place, adding sourcing and engineering value beyond the raw manufacturer datasheet.
BSS138LT1G - 50V 200mA N-Channel MOSFET SOT-23 | onsemi
The onsemi BSS138LT1G is a single N-channel logic-level power MOSFET rated for 50 V drain-source voltage and 200 mA continuous drain current, with a maximum on-resistance of 3.5 ohm and a 225 mW power dissipation at Ta, housed in a 3-pin SOT-23-3 (TO-236) surface-mount package. A small-signal power MOSFET is a voltage-controlled semiconductor switch used to turn low-current loads on and off or to shift logic levels between voltage domains. Within the semiconductor hierarchy it belongs to the metal-oxide-semiconductor FET (MOSFET) family, a subset of field-effect transistors (FETs), which in turn are a class of discrete power semiconductors used across virtually every electronic system. The BSS138LT1G is defined by its low gate threshold voltage, which permits direct drive from 3 V and 5 V logic (MCU GPIO, FPGA I/O) without a dedicated gate driver. Its 50 V rating provides generous margin over 12 V, 24 V and 48 V rails for low-current switching, while the 3.5 ohm RDS(on) keeps conduction losses acceptable at the rated 200 mA. The SOT-23-3 footprint is one of the smallest industry-standard packages, enabling very dense layouts. Internally the device is an enhancement-mode N-channel MOSFET built on onsemi's small-signal MOSFET process, with a body diode from source to drain for inductive-load freewheeling. Because gate charge is minimal, switching losses stay low even at moderate PWM frequencies, making it a common choice for relay and LED drivers. Typical applications include logic-level load switches in portable and battery-powered products, bidirectional I2C level shifting between 3.3 V and 5 V domains, relay and solenoid drivers, and low-side switching in cordless phones, printers and computers. A key design consideration is thermal budget: at 225 mW maximum dissipation, keep VDS x ID well below the limit and use short, wide traces to the SOT-23 pads to conduct heat into the PCB. This page synthesizes distributor pricing, verified drop-in alternatives, pinout detail, and practical design notes not consolidated in the manufacturer datasheet.
BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi
The VBsemi BSS138LT1G-VB is a small-signal N-channel enhancement-mode power MOSFET rated for 50 V drain-source voltage and 200 mA continuous drain current, dissipating up to 225 mW at Ta, housed in a 3-pin SOT-23-3 (TO-236) surface-mount package. It is a pin-compatible equivalent of the widely used onsemi BSS138LT1G logic-level MOSFET. A small-signal MOSFET is a discrete semiconductor switching transistor in the broader hierarchy: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor. Unlike bipolar junction transistors, MOSFETs are voltage-controlled devices with essentially zero DC gate current, making them ideal for interfacing microcontroller GPIO outputs to loads. The BSS138 family is specifically a logic-level type, meaning its gate threshold is low enough for direct drive from 3.3 V and 5 V logic outputs. Key features include a low gate threshold voltage suited to logic-level drive, a compact SOT-23 footprint that minimizes board area, surface-mount construction for automated assembly, and RoHS-compliant lead-free construction. The device switches low-current loads such as relay coils, LED strings, level-shifters, and power-management rails in portable products. Architecturally, the BSS138LT1G-VB uses a lateral DMOS cell structure optimized for low-voltage, low-current switching rather than high-power conduction. Its small die keeps input capacitance low, enabling fast switching with modest gate drive, while the 50 V drain rating provides margin on 12 V and 24 V rails. Typical applications include DC-DC converter auxiliary switches, load switches in battery-powered products, level-shifting between 5 V and 3.3 V logic domains, and low-side switching of relays and LEDs in cellular phones, printers, PCMCIA cards, and computers - the same application space targeted by the onsemi BSS138LT series. When designing, keep continuous drain current well below the 200 mA rating at elevated ambient temperature, and add a gate series resistor (typically 100 ohm to 1 kohm) to damp ringing when driven from fast logic outputs. This page synthesizes distributor pricing from LCSC, drop-in alternatives, pinout, and practical design notes not consolidated in the manufacturer datasheet.
BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon
The Infineon BSS138NH6327XTSA2 is an N-channel enhancement-mode SIPMOS small-signal MOSFET rated at 60 V V(BR)DSS, 230 mA continuous drain current (Ta), and 3.5 ohm maximum R_DS(on) at V_GS = 10 V, housed in a 3-pin PG-SOT-23 surface-mount package and supplied on tape-and-reel. Its logic-level V_GS(th) of approximately 1.4 V allows direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage, making it a standard building block for low-power switching. The device is qualified to AEC-Q101, halogen-free per IEC 61249-2-21, Pb-free with RoHS-compliant lead plating, and carries an automotive-grade reliability profile. A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents. Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing. Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for ±20 V V_GS, providing margin against transient over-drive. Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes. When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon
The Infineon BSS169H6327XTSA1 is an N-channel depletion-mode power MOSFET rated at 100 V VDS, 170 mA continuous drain current (Ta), and 360 mW power dissipation, housed in a 3-pin PG-SOT23 surface-mount package. Built on Infineon's proprietary depletion-mode process, it is one of the few small-signal depletion MOSFETs still in volume production and offers an on-resistance of up to 6 Ohm at VGS=0 V. A depletion-mode MOSFET (also called a depletion-mode or normally-on FET) is a field-effect transistor that conducts at zero gate-source bias. Unlike standard enhancement-mode MOSFETs (such as the ubiquitous 2N7002 or BSS138), which require a positive VGS to turn on, depletion-mode devices are on by default and require a negative gate bias to switch off. This normally-on behavior places depletion-mode MOSFETs in the broader family of field-effect transistors within power semiconductors, sitting alongside JFETs, standard MOSFETs, and IGBTs in the device taxonomy. The hypernym chain runs depletion-mode MOSFET -> field-effect transistor -> transistor -> discrete semiconductor. Key features of the BSS169 include the always-on characteristic that simplifies startup circuitry, a pinch-off voltage around -3.5 V that allows digital logic drive from a single supply, low leakage at full pinch-off, and a small SOT-23 footprint that fits in any 0402-class board space. The device's 100 V drain rating provides generous headroom for 24 V industrial rails and telecom supply protection circuits. Its depletion-mode nature makes it particularly valuable in power-supply startup, in-rush-current limiting, over-voltage protection, and off-line voltage reference circuits where a normally-on pass element is preferred. Technically, the BSS169 uses a vertical DMOS structure that gives it a low RDS(on) when fully on and a sharp pinch-off curve for clean switching. Designers exploit the always-on channel to pre-bias downstream stages or build constant-current sources using the saturation characteristic. Compared to enhancement-mode alternatives, the BSS169 simplifies gate-drive networks but requires careful handling because it cannot be turned off by simply pulling the gate to ground. Typical applications include power-supply startup assistance (where it acts as a soft-start bypass), in-rush current limiters at the input of hot-plug DC rails, over-voltage protection crowbars, off-line voltage references for SMPS controllers, normally-on level shifters, and constant-current source circuits. The wide VDS range also suits it to 48 V telecom and PoE protection. When designing with the BSS169, plan the gate-bias network first because the device is on at VGS=0. A typical circuit uses a resistor divider or zener clamp to set a defined pinch-off state during normal operation. Confirm that downstream circuits tolerate the always-on condition during power-up, and ensure the gate-source zener clamp does not exceed the +/-20 V VGS absolute maximum. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in alternatives verified against the SOT-23 footprint, and practical depletion-mode design notes that go beyond the manufacturer's datasheet.
BSS192PH6327FTSA1 - P-Ch 250V 190mA MOSFET SOT-89 | Infineon
The Infineon BSS192PH6327FTSA1 is a P-channel enhancement-mode small-signal MOSFET rated at 250 V VDS, 190 mA continuous drain current (Ta), and 1 W power dissipation (Ta), housed in a 4-pin (3+Tab) PG-SOT89 surface-mount package. As a member of Infineon's SIPMOS small-signal family, it provides a logic-level-friendly enhancement P-channel switch with high blocking voltage in a compact outline, suitable for industrial and automotive AEC-Q101 environments where board space is constrained but voltage headroom is required. A P-channel MOSFET (P-FET) is a metal-oxide-semiconductor field-effect transistor in which the source-to-drain current is conducted by majority holes when a negative gate-to-source voltage is applied. P-channel devices sit in the hierarchy small-signal MOSFET -> MOSFET -> discrete semiconductor -> active component, and they are commonly chosen for high-side switching because they can be turned on by pulling the gate toward ground, simplifying gate drive in systems where only a positive rail is available. Key features of the BSS192PH6327FTSA1 include its 250 V drain-to-source breakdown, 190 mA continuous drain current at 25 C ambient, and the SOT-89 (PG-SOT89) outline whose center tab provides a low thermal resistance path to a PCB copper pad. The part is qualified to AEC-Q101, making it appropriate for automotive electronics, and is supplied on tape and reel for high-volume SMT assembly lines. Drive voltage is specified at 2.8 V (Max Rds On) and 10 V (Min Rds On). Architecturally, the device uses Infineon's SIPMOS planar cell technology, which optimizes the trade-off between on-resistance, switching speed, and ruggedness. With its 250 V rating and modest 190 mA current, the BSS192PH6327FTSA1 targets applications where the design needs a P-channel high-side switch or a level shifter that tolerates wide input rails - including offline bias circuits, relay driver front-ends, and small-signal analog switching blocks. Typical applications include high-side load switching in industrial controllers, automotive body and lighting modules, signal-source multiplexing in test equipment, level shifting between low-voltage microcontrollers and high-voltage rails, and reverse-polarity / over-voltage protection circuits. The combination of 250 V blocking and SOT-89 footprint also makes it useful as a discrete switch inside power-supply start-up or hold-up paths. Designers should note that for sustained DC conduction the SOT-89 center tab must be soldered to a sufficiently large copper area to keep junction temperature within safe limits. Because the device is P-channel and enhancement-mode, a pull-up resistor on the gate is typically required to keep it off when the driver is in a high-impedance state. This page consolidates distributor pricing, parametric comparison data, and application notes to give engineers a single reference point beyond the manufacturer datasheet for design-in, sourcing, and second-source decisions.
BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon
The Infineon BSS205NH6327XTSA1 is a 20 V N-channel small-signal MOSFET rated for 2.5 A continuous drain current (Ta) and 500 mW power dissipation, supplied in a 3-pin PG-SOT23 (SC-59 / TO-236) surface-mount package. It is built on Infineon's OptiMOS™ small-signal MOSFET process and is AEC-Q101 qualified, making it suitable for both consumer and automotive applications. The part is supplied on Tape & Reel (H6327 suffix) with Pb-free lead plating and is fully RoHS compliant. A small-signal N-channel MOSFET is a voltage-controlled semiconductor switch in which a gate-source voltage modulates the conductance of an n-type channel between source and drain. Small-signal MOSFETs are typically used for low-current switching (<5 A), level shifting, load switching, and analog signal multiplexing. They sit within the broader hierarchy: small-signal MOSFET → discrete MOSFET → discrete semiconductor → power management component. The BSS205N family is specifically engineered for space-constrained switching tasks where R<sub>DS(on)</sub> per mm², fast switching, and automotive-grade reliability matter. Key electrical specifications include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 20 V, maximum continuous drain current of 2.5 A at 25 °C ambient, R<sub>DS(on)</sub> maximum of 85 mΩ at V<sub>GS</sub> = 4.5 V (per the Infineon product page for the BSS205N family), and a typical gate threshold V<sub>GS(th)</sub> in the 1 V region. The PG-SOT23 footprint is one of the industry's most widely adopted 3-pin SMD packages, simplifying PCB layout and second-source sourcing. The BSS205N uses trench-based PowerMOS technology that delivers low on-resistance in a small outline, trading off higher R<sub>DS(on)</sub> than larger packages for an exceptionally small footprint. With a maximum power dissipation of 500 mW, the part is intended for pulse-load and low-duty-cycle switching applications rather than continuous high-current conduction. Typical applications include load switching in portable and battery-powered devices, power-rail multiplexing, USB power switching, LED backlight drivers, and signal-level shifting between logic domains. Its AEC-Q101 qualification also extends use into automotive body electronics and infotainment subsystems. When designing with this part, derate drain current aggressively at elevated ambient temperatures and respect the 500 mW package dissipation limit. Use a gate resistor to control switching transients and protect against dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in equivalents, and design considerations not aggregated on the manufacturer datasheet alone.
BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon
The Infineon BSS214NH6327XTSA1 is a single N-channel small-signal MOSFET built on the OptiMOS 2 process, rated for 20 V VDS and 1.5 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package. The device features a maximum on-resistance of 250 mOhm at VGS = 4.5 V, 500 mW power dissipation (Ta), and is qualified to AEC-Q101 for automotive applications. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an n-type conduction channel between drain and source. As a small-signal MOSFET in the broader discrete-semiconductor hierarchy, it sits under power MOSFETs, which themselves are a sub-category of discrete transistors. Low-threshold, logic-level variants like the BSS214N are designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins without a separate gate driver stage. The key features include a logic-level gate threshold (VGS(th) in the sub-2 V range), 250 mOhm maximum RDS(on) at 4.5 V VGS, low gate charge enabling fast switching transitions, and an integrated ESD protection diode on the gate. The 20 V VDS rating makes it suitable for low-voltage bus switching such as USB (5 V), 12 V battery systems, and point-of-load rails below 15 V. The OptiMOS 2 technology provides a favorable FOM (RDS(on) x Qg) for its class. Architecturally, the BSS214N uses Infineon's planar OptiMOS 2 cell design, which reduces gate charge and conduction loss relative to older TrenchMOS generations. The SOT-23 package's exposed lead frame allows modest thermal dissipation to copper pads, supporting up to 500 mW continuous dissipation on a standard 1 oz JEDEC EIA/JESD51 FR4 test board. Typical applications include load switching in USB ports, battery management systems, power-rail multiplexing, DC-DC converter synchronous-rectifier low-side switches, and motor-driver low-side stages in small fans or pumps. Automotive body electronics and industrial sensor interfaces also benefit from the AEC-Q101 qualification. When designing with this part, observe the SOA derating for pulsed currents above 1.5 A and ensure that the VGS drive voltage does not exceed the maximum rating. The SOT-23 footprint requires thermal copper-pad design to sustain continuous 500 mW; thermal vias under the drain pad are recommended. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon
The Infineon BSS214NWH6327XTSA1 is an N-Channel small-signal OptiMOS power MOSFET rated at 20 V VDS, 1.5 A continuous drain current, and 250 mOhm maximum Rds(on), housed in a 3-pin SOT-323 (PG-SOT323) surface-mount package and qualified to AEC-Q101. It belongs to Infineon's OptiMOS small-signal family, designed for space-constrained, high-efficiency switching applications where both conduction and switching losses must be minimized. A small-signal MOSFET is a discrete field-effect transistor that uses an insulated gate (in this case, metal-oxide) to control current flow between the drain and source terminals. The 'OptiMOS' family specifically refers to Infineon's optimized trench MOSFET technology that achieves very low on-state resistance per unit silicon area. Small-signal MOSFETs occupy the product-type hierarchy as follows: MOSFET -> discrete semiconductor -> transistor -> semiconductor device, and the BSS214NW is positioned as a 'small-signal / small-power' switching element suitable for sub-2 A loads. Key features include a logic-level gate drive (Vgs(th) compatible with 2.5 V/4.5 V rails typical of microcontrollers), 500 mW power dissipation at Ta=25C, low gate charge for fast switching, and an integrated ESD-protected gate. The trench cell structure provides industry-leading figure-of-merit (FOM = Rds(on) x Qg), minimizing both conduction and switching losses in PWM and load-switch topologies. Typical applications include DC-DC converter synchronous rectification, load switching in portable and battery-powered equipment, motor-driver low-side switches, LED backlight dimming, and USB/charger power-path management. The 20 V rating makes it compatible with 5 V and 12 V rails, while the SOT-323 footprint supports miniaturized designs in wearables and IoT end nodes. When designing with this device, derate power dissipation for ambient temperature using the thermal resistance specified in the datasheet. For switching applications, drive the gate with a sharp 10 V (or logic-level equivalent) edge to minimize transition losses and avoid partial-turn-on regions that cause shoot-through in synchronous-rectifier configurations.