MOSFET
製品 (1294)
BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363
The Infineon BSD214SNH6327XTSA1 is an N-channel small-signal MOSFET from the OptiMOS family housed in a 6-pin SOT-363 (PG-SOT363-PO) surface-mount package. It is rated for 20V drain-to-source voltage (Vdss) and 1.5A continuous drain current (Id) at 25°C ambient, with a 500mW power dissipation rating, and is qualified to AEC-Q101 for automotive applications. The device uses Infineon's OptiMOS process to deliver low on-state resistance at low gate drive levels of 2.5V and 4.5V, making it well suited to battery-powered and logic-level designs. Per the manufacturer datasheet, the part is supplied on tape and reel with a standard pack quantity of 3000 units. A small-signal N-channel MOSFET is a voltage-controlled switching device in which a positive gate-to-source voltage creates an inversion layer that allows current to flow between drain and source. Small-signal MOSFETs sit at the lowest tier of the power MOSFET hierarchy (small-signal MOSFET -> MOSFET -> discrete semiconductor -> semiconductor) and are typically used for low-current switching, level shifting, load switching, and signal conditioning rather than high-power conversion. Within that hierarchy, OptiMOS devices target the lowest possible RDS(on) per unit area, which translates directly into lower conduction losses in compact surface-mount packages. Key features of the BSD214SNH6327XTSA1 include low threshold voltage compatible with 2.5V logic drive, low on-state resistance in a small SOT-363 outline, ESD protection on the gate, and Pb-free lead plating with RoHS compliance. The H6327XTSA1 suffix indicates the part is qualified to AEC-Q101 and ships on 7-inch or larger reels per Infineon's standard packing code. Compared with larger DPAK/TO-220 MOSFETs, this device trades absolute current handling for a footprint that is several times smaller, enabling high-density switching in USB, HDMI, mobile, and automotive body-electronics designs. Typical applications for this part include DC-DC conversion point-of-load switching, battery management load switching in mobile and wearable products, power-rail switching in automotive body modules, USB Type-C high-side load switches, and signal-level analog switching. It can also serve as a low-side switch for small relays, LEDs, or buzzers where space is constrained. The SOT-363 footprint places six pins (gate, source, drain, and three NC or duplicated pins depending on the variant's pinout) around a 2.1mm x 1.25mm body that is compatible with high-density PCB assembly. When designing with this part, observe the 500mW (Ta) power dissipation limit and derate aggressively at elevated ambient temperatures; thermal resistance on a minimal copper pour is typically around 250-300 C/W. Keep the gate trace short and add a 100kohm pull-down on the gate if the part must default to off when the controller is in reset. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet.
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
The Infineon BSD235CH6327XTSA1 is a dual complementary MOSFET array integrating one n-channel and one p-channel OptiMOS™ power transistor in a single PG-SOT363-6-1 (SOT-363) surface-mount package. The n-channel section is rated at 20V drain-to-source voltage with continuous drain current up to 950 mA, while the p-channel section is rated at 20V VDS with 530 mA continuous current (negative polarity). Both die share a 500 mW total power dissipation budget and RDS(on) ratings consistent with Infineon's OptiMOS™ low-voltage process technology. A MOSFET array (also called a dual MOSFET or MOSFET pair) is a semiconductor device that co-integrates two MOSFETs in a single package, often in complementary N+P polarity for half-bridge or push-pull switching stages. MOSFET arrays belong to the broader hierarchy of discrete semiconductors -> transistors -> field-effect transistors (FETs) -> metal-oxide-semiconductor field-effect transistors (MOSFETs) -> power MOSFETs. They are widely used in compact load-switch and level-shift circuits where PCB area is at a premium and matched on-resistance / threshold-voltage characteristics between the two devices improve symmetry. The BSD235C belongs to Infineon's famous low-voltage OptiMOS™ families, the market leader in high-efficiency solutions for power generation (e.g. solar micro inverters) and power supplies (e.g. server and telecom rails). The compact SOT-363 outline measures roughly 2.0 × 1.25 × 1.0 mm, enabling the part to occupy the footprint of a single SOT-363 IC while delivering two switches — critical for portable and battery-powered designs. The 20V VDS rating makes the device well suited to 3.3V, 5V, and 12V rails, including USB-Power-Delivery (USB-PD) switching and 1-cell Li-ion load management. Typical applications for the BSD235CH6327XTSA1 include load switching in portable devices, battery protection circuits, DC-DC converter synchronous-rectifier signal stages, level shifters, and small-signal motor or relay drivers. The complementary polarity simplifies full-bridge and push-pull topologies because designers can use one device per switch position without needing two separate N-only or P-only arrays. When designing with this part, observe a few critical trade-offs. The 500 mW package-level dissipation budget means both MOSFETs cannot simultaneously carry their maximum rated currents at large VDS — derate by at least 30% in worst-case DC conditions or move pulsed load. Keep gate-drive rise/fall times fast (<100 ns) to avoid the linear-region losses that dominate in small-signal MOSFET arrays; a 10 Ω gate series resistor typically damps ringing without slowing switching unnecessarily. This page synthesizes verified distributor stock, drop-in alternatives from Infineon's own OptiMOS™ family, and practical design notes not found in the manufacturer datasheet itself, giving engineers a one-stop view of the BSD235CH6327XTSA1 for sourcing, second-sourcing, and PCB layout decisions.
BSD316SNH6327XTSA1 - 30V N-Ch 1.4A MOSFET | Infineon | SOT-363
The Infineon BSD316SNH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated for 30V drain-to-source voltage and 1.4A continuous drain current, housed in a 6-pin SOT-363 (PG-SOT363-PO) surface-mount package. It dissipates 500mW at Ta=25°C and is qualified to AEC-Q101, making it suitable for automotive and industrial environments with extended temperature stress. A small-signal N-channel MOSFET is a voltage-controlled field-effect transistor used for low-current switching, level shifting, and high-impedance analog signal routing. N-channel devices conduct between drain and source when a positive gate-to-source voltage is applied, offering lower on-resistance per unit die area than equivalent P-channel parts. Small-signal MOSFETs sit in the broader power-semiconductor taxonomy of N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor, and are typically used in signal paths up to a few amps rather than power conversion stages measured in tens of amps. Key features include low on-state resistance, fast switching characteristics, and an ESD-protected gate structure typical of Infineon's Small Signal N-channel family. The SOT-363 (also called SC-88) outline is a 6-pin variant of the SOT-363 family that accommodates two independent MOSFETs in dual-source configurations, supporting high-density PCB layouts where board area is at a premium. The BSD316SNH6327XTSA1 uses a planar DMOS cell structure with optimized gate-oxide design for low gate charge and fast turn-on/turn-off transitions. Its 1.4A continuous current rating is achieved in a 6-pin SOT-363 footprint with thermal resistance optimized for the package outline. AEC-Q101 qualification confirms reliability for automotive-grade applications across the full automotive temperature range. Typical applications include load switching in automotive body electronics, signal multiplexing in industrial control, level shifters between microcontrollers and higher-voltage peripherals, and high-side or low-side drive stages for relays, LEDs, and small solenoids. The combination of SOT-363 footprint and 1.4A rating positions it for space-constrained designs that need more current than a SOT-23 MOSFET can deliver. When designing with this device, observe the 500mW power dissipation limit at 25°C ambient and derate linearly for higher temperatures. A continuous ID of 1.4A requires the drain pad copper to be properly designed for heat extraction, and the gate drive voltage should exceed the threshold voltage with margin to ensure full enhancement under all operating conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet's specification tables, giving procurement and engineering teams a single source for selection, comparison, and supply-chain risk evaluation.
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
The Infineon BSF134N10NJ3GXUMA1 is an N-channel OptiMOS power MOSFET rated at 100 V drain-source breakdown voltage, delivering 9 A continuous drain current at 25 °C ambient (Ta) and 40 A at 25 °C case (Tc), with 2.2 W (Ta) and 43 W (Tc) power dissipation, housed in a surface-mount MG-WDSON-2 (CanPAK M) package. It belongs to Infineon's 100 V OptiMOS family that achieves a 30 % reduction in both RDS(on) and figure-of-merit (FOM) versus the prior generation. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch current in power-conversion circuits. Within the broader taxonomy it sits at MOSFET → transistor → discrete semiconductor → semiconductor. The OptiMOS family specifically targets high-efficiency switched-mode power supplies (SMPS), motor drives, and synchronous rectification, where low conduction and switching losses translate directly into higher system efficiency and smaller thermal budgets. Key features of the BSF134N10NJ3 G include a low on-state resistance for the 100 V class, an integrated body diode for synchronous-rectifier operation, and the compact CanPAK M / MG-WDSON-2 footprint with an exposed top-cooling pad. The device is rated for surface-mount reflow and is supplied on tape-and-reel for high-volume assembly. The drain-lead frame is bottom-side, allowing direct PCB heatsinking through the drain pad. Architecturally, the device uses Infineon's planar OptiMOS cell design with trench-gate technology to balance low RDS(on), low gate charge (Qg), and robust avalanche capability. Optimized FOM (RDS(on) × Qg) reduces switching losses at high frequency, which is critical for telecom and server SMPS stages operating at 100 kHz to 500 kHz. Typical applications include primary-side switches and synchronous rectifiers in 48 V telecom and server SMPS, 24 V to 80 V industrial motor drives, battery-management protection FETs in e-mobility and power tools, and high-side switches in solar micro-inverters. The 100 V rating provides adequate margin in 60 V / 72 V systems. When designing with this part, verify the PCB drain pad copper area is sufficient to keep junction temperature below 150 °C under worst-case load, and place the gate drive loop compact to minimize ringing at high di/dt. This page combines distributor pricing, drop-in alternatives, and design guidance that go beyond the manufacturer's datasheet alone.
BSF134N10NJ3GXUMA2 - 100V OptiMOS N-Ch MOSFET 40A | Infineon
The Infineon BSF134N10NJ3GXUMA2 is an OptiMOS N-channel power MOSFET rated at 100V drain-source voltage, delivering 9A continuous drain current at ambient (Ta) and 40A at case temperature (Tc), housed in a compact surface-mount MG-WDSON-2 (CanPAK-like) package. Built on Infineon's 100V OptiMOS platform, the device offers 30% lower RDS(on) than previous generations and an improved figure-of-merit (FOM) targeting switched-mode power supply (SMPS), DC-DC conversion, and motor control designs. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. N-channel MOSFETs like this one carry the majority of current carriers as electrons, providing lower on-resistance per unit silicon area than equivalent P-channel parts. The OptiMOS family belongs to the broader class of power-management discrete semiconductors, sharing the market with IGBTs (for very high voltages) and GaN FETs (for highest-frequency switching). Selecting the right MOSFET family balances RDS(on), switching charge (Qg, Qgd), thermal resistance, and package footprint. Key features of the BSF134N10NJ3GXUMA2 include 2.2W power dissipation at ambient (Ta) and 43W at case (Tc), enabling high inrush handling in telecom and datacom bricks. The MG-WDSON-2 package exposes a top-side thermal pad that minimizes thermal resistance to PCB copper, allowing continuous operation near 40A with proper board layout. The ultra-low gate and output charges of the OptiMOS 100V process technology reduce driver losses and shrink dead-time, improving light-load efficiency in synchronous-rectifier positions. Typical applications include voltage regulators in solar micro-inverters, 48V telecom and datacom bus converters, brushless DC (BLDC) motor drives for industrial automation, and high-density server power-supply unit (PSU) secondary-side synchronous rectification. The 100V rating also supports 24V/36V industrial battery systems with margin against inductive ringing. When designing with this device, place the gate-drive loop area to a minimum and keep the source-return path symmetric between driver ground and the Kelvin source pin (if exposed) to avoid spurious turn-on.
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
The Infineon BSG0813NDIATMA1 is an OptiMOS 5 Power Block integrating a low-side and a high-side N-channel MOSFET in a synchronous buck converter configuration, housed in a leadless 5.0 x 6.0 mm PG-TISON-8 surface-mount package. The block is rated for 25 V drain-source voltage with 19 A continuous drain current on the low-side and 33 A continuous drain current on the high-side, dissipating up to 2.5 W total. The integrated half-bridge topology eliminates parasitic inductance between FETs and driver, enabling higher switching frequencies and reduced EMI in compact DC-DC converter designs. A Power Block is a multi-chip semiconductor module that integrates two MOSFETs (typically one high-side and one low-side switch) plus an optional gate-driver or bootstrap circuitry into a single package. The architecture belongs to the broader hierarchy of power management ICs and discrete MOSFET modules, specifically the synchronous buck converter building block used in voltage regulator modules (VRMs) and point-of-load (POL) converters. By co-packaging the high-side and low-side switches, the Power Block minimizes the high-current switching loop, which directly reduces switching losses and voltage overshoot. Key features include very low on-state resistance for high-efficiency synchronous rectification, integrated gate drivers optimized for the internal FET pair, a 25 V drain-source voltage rating suitable for 12 V bus systems, and a 5.0 x 6.0 mm PG-TISON-8 footprint that is footprint-compatible with the industry-standard DrMOS area. The leadless package also provides superior thermal performance compared to traditional SO-8 or TSSOP-8 discrete pairs, allowing higher continuous current without external heatsinking. The OptiMOS 5 technology generation provides an optimized figure of merit (RDS(on) x Qg) for high-frequency buck topologies. The internal low-side FET is optimized for low RDS(on) to minimize conduction loss, while the high-side FET is balanced for both low gate charge and low RDS(on) to manage switching loss and thermal rise at high duty cycles. Together these optimize the synchronous buck regulator efficiency curve across the typical 10-90% load range. Typical applications include voltage regulator modules for servers and datacenters, telecom base-station POL converters, industrial 24V-bus buck regulators, USB-PD and Type-C laptop adapters, and graphics-card core VRs. The integrated Power Block format reduces the bill of materials and PCB real-estate required versus a discrete half-bridge plus gate-driver approach. When designing with this part, verify that the maximum drain current of the high-side FET (33 A) is sufficient for the worst-case peak current of the buck converter under load-transient conditions. Designers should also confirm that the bootstrap capacitor and bootstrap diode external component values match the application note's recommended network, and that the exposed pad is soldered to a sufficiently large copper pour to stay within the 2.5 W package dissipation limit. This page synthesizes distributor pricing tiers, drop-in Power Block alternatives, and practical design notes not found in the manufacturer datasheet, enabling faster BOM selection and second-source validation.
BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon
The Infineon BSL207SPH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS™ process technology, rated for -20 V VDS and continuous drain current of 6 A (Ta) in a compact 6-pin TSOP-6 (PG-TSOP6-6) surface-mount package. It features a maximum on-state resistance of approximately 65 mOhm at VGS = -4.5 V, with logic-level compatibility down to VGS = -2.5 V, making it well suited for direct microcontroller GPIO drive without intermediate gate-driver stages. The part is qualified to AEC-Q101 for automotive applications. A P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which a negative gate-source voltage creates a conductive p-channel between source and drain. P-channel MOSFETs are commonly used for high-side load switching in power management ICs and discrete load-driver circuits because their source terminal can sit at the system supply rail, eliminating the need for a charge pump or bootstrap circuit. Within the broader taxonomy, a P-channel MOSFET belongs to the FET family, then to discrete transistors, then to discrete semiconductors, and finally to the wider semiconductor component category. Key differentiating features of the BSL207SPH6327XTSA1 include its 6 A continuous drain current in a sub-3x3 mm TSOP-6 outline, low gate threshold voltage for 2.5 V logic-level drive, and the OptiMOS™ process which minimizes gate charge (Qg) and figure-of-merit (RDS(on) × Qg) for reduced switching losses. The 20 V VDS rating is optimized for 5 V and 12 V rail switching in industrial and automotive point-of-load applications. The device leverages trench-cell OptiMOS™ architecture to achieve low RDS(on) per unit silicon area, enabling 6 A handling in a TSOP-6 footprint that would otherwise require a larger SO-8 or DPAK package. Its low Qg simplifies gate-drive design and reduces power dissipation in the controller's GPIO pin during switching transitions. Typical applications include load switching in automotive ECUs, USB power-distribution switches, battery protection circuits in portable equipment, and high-side switches in industrial PLC modules. Its logic-level gate threshold makes it ideal for direct drive from 3.3 V microcontroller GPIOs without external driver circuitry. When designing with this device, ensure the gate-source pull-down resistor is sized to keep the MOSFET safely off during MCU reset. A 100 kOhm gate pulldown is a common choice; smaller values reduce susceptibility to induced turn-on but increase quiescent current draw from the gate driver. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
The Infineon BSL215CH6327XTSA1 is a 20 V, 1.5 A complementary N-channel and P-channel power MOSFET array housed in a 6-pin PG-TSOP6-6 surface-mount package. The integrated half-bridge combines Infineon's low-voltage OptiMOS technology for both polarities, delivering an on-resistance of 250 mOhm max and a total power dissipation of 500 mW. The compact TSOP-6 footprint integrates two MOSFETs that would otherwise require four discrete packages. A MOSFET array (sometimes called a complementary or half-bridge pair) is a power-management semiconductor that pairs an N-channel and a P-channel FET in a single package to simplify push-pull output stages, level shifters, and synchronous rectification in compact designs. The complementary structure belongs to the broader hierarchy of MOSFETs -> discrete semiconductors -> power transistors -> active components. By integrating both channels, designers reduce PCB area, parasitic loop inductance, and BOM count compared with discrete implementations. Key features include a 20 V drain-source breakdown voltage suitable for 12 V rail switching, 1.5 A continuous drain current capability, low gate threshold voltage optimized for 2.5 V/3.3 V logic-level drive, and a typical on-resistance profile that keeps conduction losses small in portable and battery-powered applications. The OptiMOS cell structure provides fast switching transitions that minimize switching losses in DC-DC conversion. The N-channel and P-channel dies share an advanced trench process, with the P-channel specifically engineered to mirror the N-channel's low R_DS(on) and figure-of-merit (FOM) characteristics. This technology alignment ensures symmetric switching performance, which is critical for half-bridge and synchronous buck topologies where channel mismatch can cause shoot-through or uneven duty cycles. Typical applications include load switching in portable devices, power management for wearables and IoT sensors, battery protection circuits, USB power switching, audio amplifier output stages, and small motor driver bridges. The device is also suitable for level shifting between low-voltage MCUs and higher-voltage peripheral loads. When designing with the BSL215CH6327XTSA1, ensure both MOSFET gates are driven within their maximum V_GS ratings (typically +/-12 V absolute, +/-8 V recommended). For the P-channel, the gate must be pulled below the source to enhance, which means a charge-pump or low-side driver is unnecessary - a simple logic-level signal works when the source sits at the rail. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and cross-brand equivalents, plus practical thermal and PCB layout notes not collected in any single manufacturer document.
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
The Infineon BSL308CH6327XTSA1 is a complementary dual power MOSFET array integrating one n-channel and one p-channel OptiMOS™ transistor in a single 6-pin TSOP-6 (PG-TSOP6-6) surface-mount package. The device is rated at 30 V VDS with continuous drain current of 2.3 A on the n-channel and 2 A on the p-channel, delivering up to 500 mW of total power dissipation. It belongs to Infineon's OptiMOS™ low-voltage family and is qualified to automotive standards. A MOSFET array (sometimes called a dual MOSFET or half-bridge MOSFET) integrates two transistors - typically one n-channel and one p-channel, or two n-channel devices - in a single package so that designers can build complementary switching or load-drive circuits with one component. In the BSL308CH6327XTSA1, the complementary n+p-channel topology allows direct high-side / low-side drive of small loads from a single supply without requiring a charge pump or level shifter. MOSFET arrays are a sub-category of discrete semiconductors within power MOSFETs and are widely used where PCB area, switching speed, and thermal coupling between channels matter. Key features include low on-state resistance on both channels for reduced conduction losses, low gate charge for fast switching transitions, integrated ESD protection, and an operating temperature range of -55 °C to +150 °C. The TSOP-6 package provides a small 2.9 x 1.6 mm footprint with a thermally efficient lead frame, and its pinout is industry-standard, enabling straightforward drop-in replacement. Automotive qualification under the part-number suffix confirms suitability for harsh-environment designs. Architecturally, the BSL308CH6327XTSA1 uses Infineon's planar OptiMOS™ process technology optimized for 30 V operation, balancing low RDS(on) with low Qg and Qgd figures. The shared substrate and lead frame provide symmetric thermal performance between channels, important for full-bridge or push-pull applications where channel imbalance can cause distortion or DC offset. Typical applications include load switching and power management in portable devices, battery protection circuits, USB On-The-Go (OTG) power paths, DC-DC converter high-side / low-side switches, motor-driver bridges in small brushed DC motors, and automotive body electronics such as lighting and mirror control. Designers value the complementary configuration for synchronous-rectifier-style circuits where one channel is on while the other is off. When designing with the BSL308CH6327XTSA1, ensure that the gate-drive voltage reaches the full enhancement rating on both channels and that the maximum junction temperature of 150 °C is respected under worst-case SOA conditions. The two channels share the same thermal pad in many layouts, so calculate combined power dissipation rather than treating each MOSFET independently. This page consolidates Infineon datasheet specifications, distributor pricing, and curated drop-in alternatives in the TSOP-6 footprint to give engineers a faster path from selection to BOM finalization.
BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon
The Infineon BSL308PEH6327XTSA1 is a dual P-channel enhancement-mode MOSFET array rated at -30 V drain-source voltage and -2 A continuous drain current, housed in a 6-pin PG-TSOP6-6 (TSOT-23-6) surface-mount package. Built on Infineon's OptiMOS small-signal process, the device integrates two P-FETs that share a common source connection, making it well-suited for high-side load switching where a single gate signal can control both channels simultaneously. The array dissipates up to 500 mW (Ta) and is qualified to AEC-Q101 for automotive use. A P-channel MOSFET (P-FET) is a type of field-effect transistor in which the channel is formed by majority holes, enabling low-side driving from a positive rail. Dual P-FET arrays are commonly deployed in load-switch, power-ORing, and polarity-protection topologies where two channels must switch in lockstep; they sit hierarchically under discrete MOSFET, power management semiconductor, and analog switch categories. The -30 V rating makes BSL308PE family parts appropriate for 12 V automotive rails, USB load switches, and battery-powered portable devices. Key specifications include a low on-state resistance, ESD protection integrated at the gate, and a logic-level gate threshold compatible with 1.8 V, 3.3 V, and 5 V microcontrollers. The two channels are matched for synchronous switching, which simplifies gate-drive design in complementary half-bridge or full-bridge power stages. Compared with two discrete SOT-23 P-FETs, the TSOP-6 array halves the board footprint while keeping the same thermal pad connection for heat spreading. Typical applications include automotive load switching (lighting modules, body controllers, motor drivers), USB VBUS power distribution, battery protection circuits, and portable consumer electronics. The AEC-Q101 automotive qualification allows deployment under the hood and in chassis electronics where -40 C to +150 C junction operation is required. Designers favor the BSL308PE for its combination of low RDS(on), small footprint, and matched dual-FET symmetry. When designing with this device, ensure the common-source pin has a solid thermal and electrical connection; bypassing the drain with a 100 nF ceramic capacitor near each drain pin reduces switching transients. Note that the TSOP-6 package has a different pinout than a standard SOT-23-6 single P-FET, so a PCB layout designed for a discrete P-FET cannot be reused directly. Always verify gate-source voltage ratings against your controller's GPIO high level before committing to the layout.
BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon
The Infineon BSL316CH6327XTSA1 is a complementary small-signal power MOSFET integrating one n-channel and one p-channel OptiMOS device in a single PG-TSOP6-6 surface-mount package, rated 30 V drain-to-source voltage with 1.4 A (n-ch) and 1.5 A (p-ch) continuous drain current. Both transistors share 500 mW total power dissipation and a compact TSOP6 footprint, enabling full H-bridge, push-pull, load-switch, or complementary drive stages from a single 6-pin SOT-23-style outline. A complementary MOSFET pair is a discrete component grouping that places one n-channel and one p-channel enhancement-mode MOSFET in the same package, sharing gate-drive ground references. This topology eliminates the need for level-shifting circuitry and bootstrap capacitors in half-bridge or H-bridge designs, simplifying gate drive, reducing board area, and synchronizing switching transitions for cleaner edges in motor control and audio amplifier output stages. The BSL316C leverages Infineon's OptiMOS low-voltage process technology, delivering low on-state resistance per silicon area and fast switching characteristics suitable for DC-DC conversion, power management, and load switching. The complementary configuration allows designers to build efficient push-pull output stages, full H-bridge motor drivers, level shifters, and analog signal switching paths from one compact package. The PG-TSOP6-6 footprint maintains compatibility with standard JEDEC TSOP6 land patterns, enabling drop-in PCB layout reuse for either polarity of MOSFET. Typical applications include small motor drive circuits in consumer appliances, USB Type-C power switching, signal multiplexing in portable equipment, level translation between logic domains, low-side/high-side synchronous rectification, and general-purpose load switching in battery-powered devices. The compact footprint is particularly suited for space-constrained designs such as wearables, IoT sensor nodes, and portable instrumentation. When designing with this device, ensure gate-source voltages remain within the absolute maximum ratings of typically +/-8 V (verify against datasheet) for the n-channel and p-channel devices. Place gate drive resistors (typically 10-100 ohms) close to the device pins to limit ringing, and verify thermal performance with the 500 mW total package dissipation budget at the operating ambient temperature. This page synthesizes distributor pricing as of 2026-09-10, drop-in TSOP6 alternatives, application notes, and design considerations not found in the manufacturer datasheet alone, including same-Infineon TSOP6 complementary pairs and cross-brand pin-compatible equivalents sourced from the verified cross-reference data.
BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon
The Infineon BSL606SNH6327XTSA1 is a 60 V N-channel enhancement-mode small-signal/small-power MOSFET built on Infineon's OptiMOS3 process technology and housed in a 6-pin PG-TSOP6-6 (SOT-23-6 equivalent) surface-mount package. It is rated for a drain-source voltage of 60 V, continuous drain current of 4.5 A (Ta), pulsed drain current per datasheet, and a maximum static drain-source on-resistance of 60 mOhm at VGS = 10 V, with total power dissipation of 2 W at ambient. The H6327 tape-and-reel suffix designates automotive-grade screening per AEC-Q101. A small-signal/small-power MOSFET such as the BSL606SNH6327XTSA1 is a discrete semiconductor device that uses a gate electric field to control current flow between drain and source terminals. Small-signal MOSFETs sit below the taxonomy of power MOSFETs (>10 A) and above simple switches; they belong to the broader family of field-effect transistors (FET) under transistors, discrete semiconductors. OptiMOS is Infineon's trademarked trench MOSFET platform optimized for low RDS(on) x Qg figure-of-merit, low gate charge, and fast switching - making these parts especially attractive in high-frequency DC-DC converter and load-switch roles. Key electrical characteristics include a typical gate threshold voltage around 2 V, very low total gate charge Qg, low reverse transfer capacitance Crss, and avalanche-rated single-pulse robustness. The OptiMOS3 process delivers a strong balance of conduction loss and switching loss: a typical figure-of-merit of roughly 4 mOhm-nC means the device is suitable for synchronous rectification in sub-amp DC-DC converters, high-side load switches, battery protection, and small motor drive stages. Pb-free lead plating ensures RoHS compliance, while the AEC-Q101 automotive qualification makes the part a credible choice under the hood, in body electronics, and in chassis-control domains. Typical applications include high-side load switching in automotive body-control modules, USB power-distribution switches, hot-swap controllers, DC-DC converter synchronous rectifiers, LED backlight drivers, motor driver H-bridges, and battery management protection FETs. The wide 60 V drain rating also provides comfortable margin on 12 V and 24 V industrial buses. When designing in this part, observe the recommended 10 V gate-drive level for full RDS(on) performance, respect the SOA at elevated case temperatures, and follow PG-TSOP6-6 land-pattern guidelines for proper thermal dissipation through copper pours. This page synthesizes distributor pricing, drop-in alternatives from Infineon's OptiMOS family and qualified third parties, and practical design notes not found in the manufacturer datasheet alone.
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
The Infineon BSO150N03MDGXUMA1 is a dual N-channel power MOSFET array housed in a PG-DSO-8 (SO-8) surface-mount package, built on Infineon's OptiMOS 3M 30V technology platform. It combines two 30V N-channel MOSFETs with a maximum continuous drain current of 9.3A per channel and a maximum on-state resistance of 15 mOhm at 10V gate drive, enabling high-efficiency synchronous rectification in space-constrained designs. The device features ultra-low gate charge and output charge for fast switching transitions, supporting high-frequency converter topologies with minimal driver loss. A dual MOSFET (also called a MOSFET array or half-bridge FET) is a semiconductor device integrating two independent MOSFETs in a single package, used primarily to halve board space and parasitic inductance in synchronous buck/boost converters, motor half-bridges, and OR-ing circuits. The BSO150N03MDGXUMA1 sits in the power MOSFET family within the discrete semiconductors hierarchy, optimized for low-voltage (<=30V) point-of-load and DC-DC conversion applications. Key features include a 30V drain-source breakdown voltage (VDS), 9.3A continuous drain current (ID) per channel at 25C, 15 mOhm maximum RDS(on) at VGS=10V, and a low threshold voltage around 1.0V typical that simplifies logic-level gate driving. The SO-8 footprint with exposed pad (PG-DSO-8) provides a thermal resistance of approximately 50 C/W, supporting moderate continuous currents with proper PCB copper thermal management. The OptiMOS 3M technology uses a trench-gate structure with an advanced epitaxial layer, achieving the lowest figure-of-merit (FOM = RDS(on) x Qg) in the 30V class for its generation. This makes the device particularly suitable for synchronous rectification in server, datacom, and telecom voltage regulator modules where every milliwatt of conduction and switching loss translates directly into system efficiency and thermal headroom. Typical applications include synchronous buck converters in server VRMs, OR-ing FETs in redundant power supplies, motor drive half-bridges, battery protection circuits, and load-side hot-swap switches. The low gate charge also makes it attractive for high-frequency point-of-load converters where switching loss dominates at 500 kHz to 1 MHz. When designing with this part, ensure the gate driver can source and sink peak currents consistent with the total gate charge (Qg) at the operating frequency. Use Kelvin-source connection techniques (pin 2 and pin 7 typically serve as gate returns) when operating above 100 kHz to suppress common-source inductance ringing that would otherwise limit usable switching speed. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB design notes not found in the manufacturer datasheet, enabling faster component selection and second-source qualification.
BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon
The Infineon BSO220N03MDGXUMA1 is a dual N-channel 30V OptiMOS™ power MOSFET array housed in a PG-DSO-8 (SO-8) surface-mount package, rated for 7.7A continuous drain current and 22 mΩ maximum on-state resistance. Built on Infineon's OptiMOS™ 3M technology, this part combines ultra-low gate and output charge with one of the lowest R_DS(on) values in the SO-8 footprint, making it well suited to demanding point-of-load and DC-DC voltage regulator designs. The two MOSFETs share the same silicon family and are configured for half-bridge or parallel dual-FET switching topologies. A dual N-channel MOSFET array is a single-package device containing two independently controlled N-channel enhancement-mode MOSFETs. These arrays are commonly used in synchronous buck converters, half-bridge drivers, and bidirectional load switches where the PCB real estate of two discrete SOT-23 or smaller SO-8 MOSFETs would be prohibitive. The dual-FET SO-8 package simplifies layout, reduces parasitic loop inductance, and minimizes gate-drive trace lengths compared with two separate parts, which is critical in high-frequency switching applications where every nanohenry of stray inductance degrades efficiency and switching speed. Key features include a 30V drain-source breakdown voltage suitable for 12V bus systems with transient headroom, 22 mΩ maximum R_DS(on) at 10V V_GS that drops significantly at 4.5V V_GS for logic-level drive compatibility, and a low gate charge (Q_G) that minimizes driver losses. The OptiMOS™ 3M process delivers excellent figure-of-merit (FOM = R_DS(on) × Q_G) and provides robust avalanche capability. The PG-DSO-8 package has a thermally enhanced exposed pad that reduces junction-to-ambient thermal resistance, allowing sustained operation at full rated current when the PCB copper area is adequate. Typical applications include synchronous buck converters in servers and datacom equipment, point-of-load (POL) regulators on telecom boards, high-side/low-side motor drive half-bridges, battery management and protection circuits in portable equipment, and load switches in industrial 24V systems. The 30V rating provides comfortable margin for 12V rails with inductive spikes, and the dual configuration simplifies synchronous rectifier layouts. When designing with this part, ensure the exposed pad receives sufficient copper area (recommended at least 1 square inch on a 4-layer board) to keep junction temperature within safe limits. Use a gate resistor of 10Ω-47Ω to dampen ringing, and place the bootstrap capacitor close to the high-side gate-drive pin in half-bridge configurations to avoid shoot-through.
BSO613SPVGXUMA1 - P-Ch 60V 3.44A MOSFET | Infineon | Load Switch
The Infineon BSO613SPVGXUMA1 is a P-channel enhancement-mode Power MOSFET rated at -60 V VDS and -3.44 A continuous drain current (at TA=25C, 2.5 W power dissipation), housed in a compact surface-mount PG-DSO-8-6 package. Built on Infineon's OptiMOS technology, this device targets low-voltage load-switch, hot-swap, and battery-protection applications where small footprint and low on-resistance matter. A P-channel MOSFET is a type of field-effect transistor whose majority carriers are holes (positive charge), making it inherently suitable for high-side switching without a charge pump. Within the broader taxonomy, the BSO613SPVGXUMA1 belongs to the power MOSFET family, which itself is a subset of discrete semiconductors and transistors. P-channel devices simplify gate drive in load-switch topologies because a logic-low signal turns the device on, eliminating the need for a bootstrap or charge-pump circuit required by equivalent N-channel high-side switches. Key specifications include a maximum drain-source voltage (VDS) of -60 V, continuous drain current of -3.44 A at TA, pulsed drain current (per datasheet pulse curve) of significantly higher amplitude, and gate threshold voltage in the -1 V to -2.5 V range for standard logic-level drive. The PG-DSO-8-6 (Power-SO-8, 6 active pins) package exposes the drain tab for top-side cooling, offering low thermal resistance when mounted on adequate copper pour. The device is fully RoHS compliant and rated for industrial operating temperature. Architecturally, the BSO613SPVGXUMA1 uses Infineon's trench-cell OptiMOS process which minimizes Rds(on) per unit silicon area, reducing conduction losses in continuous-current paths. The avalanche-rated body diode supports inductive switching, and the part is qualified to MSL3 (Moisture Sensitivity Level 3) per JEDEC J-STD-020, suitable for standard SMT assembly lines. Typical applications include load switching in industrial 24 V / 48 V bus systems, USB power-distribution switches, battery management systems for portable equipment, motor-direction reversal in H-bridge low-side legs, and general power-ORing. The P-channel polarity also makes it ideal for reverse-polarity protection on DC input rails. When designing with this device, ensure the gate is pulled to source (or to a positive voltage above VGS(th)) during off-state to prevent accidental turn-on, and provide adequate copper area on the drain tab for thermal dissipation. Logic-level gate drive simplifies direct connection to microcontroller GPIO pins for low-frequency switching.
BSP125H6327XTSA1 - 600V 120mA N-Ch SIPMOS | SOT-223 | Infineon
The Infineon BSP125H6327XTSA1 is a 600 V N-channel small-signal MOSFET in a PG-SOT223-4 (SOT-223-3 lead + tab) surface-mount package, delivering 120 mA continuous drain current and 1.8 W power dissipation at Ta=25°C. It is part of Infineon's SIPMOS small-signal power MOSFET family, optimized for low-current high-voltage switching in compact designs where board area is at a premium. What is a small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for switching and amplification at modest current levels (typically under 1 A), as opposed to power MOSFETs that handle tens or hundreds of amps. Small-signal MOSFETs sit within the broader taxonomy of discrete semiconductors (MOSFET -> transistor -> semiconductor) and are commonly used as interface switches, level shifters, and high-side/low-side drivers in mixed-signal designs. The SIPMOS (Siemens/Infineon Power MOSFET) process technology combines vertical DMOS structures with low on-resistance per unit area, making it suitable for high-voltage, low-current applications. Key features of the BSP125H6327XTSA1 include a 600 V drain-source breakdown voltage (V(BR)DSS), low on-resistance for the current class, fast switching characteristics suited to PWM and driver stages, and an integrated tab for improved thermal dissipation via the PCB copper pad. The device is qualified for use in automotive and industrial environments, supporting applications from LED lighting drivers to relay replacements and small motor control circuits. Its SOT-223 footprint provides significantly better thermal performance than smaller packages like SOT-23 while occupying less board space than DPAK. Technically, the BSP125 uses Infineon's well-proven N-channel enhancement-mode SIPMOS process, with a gate threshold typically in the 1-2 V range for direct logic-level driving from 3.3 V or 5 V microcontrollers. The device's avalanche-rated construction provides ruggedness against inductive load transients, an important characteristic when driving relays, solenoids, or small transformers. Typical applications include automotive interior and signaling lighting, high-side load switching, small DC-DC converter start-up circuits, flyback primary-side switches below 120 mA, and signal-level analog switching in instrumentation. The wide VDS margin of 600 V also makes it suitable for offline (mains-referenced) low-power control circuits with appropriate derating. When designing with this part, observe the safe operating area at elevated temperatures - the 120 mA and 1.8 W ratings are at Ta=25°C and must be derated for ambient temperatures above 25°C. The tab pin should be soldered to a copper pour of at least 100 mm² for thermal relief in continuous-operation designs.
BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon
The Infineon BSP125H6433XTMA1 is a 600V N-channel small-signal enhancement-mode MOSFET rated at 120 mA continuous drain current and 1.8W power dissipation, housed in a 4-pin (3+tab) PG-SOT223 surface-mount package. It is qualified to AEC-Q101 for automotive applications and ships in Tape & Reel packaging. According to the Infineon datasheet, the device uses a Pb-free lead plating and is fully RoHS compliant. A small-signal power MOSFET is a discrete semiconductor that switches or amplifies low-level currents while remaining compatible with standard surface-mount assembly. In the broader taxonomy it sits under MOSFET -> FET -> discrete semiconductor -> power management. Its role is to provide a controllable conduction path whose on-resistance is set by a gate-source voltage, allowing it to act as a high-side switch, level shifter, or driver element in mixed-signal and automotive subsystems. Key differentiating features include a 600V drain-source breakdown (V(BR)DSS), a 120 mA continuous drain current at TA, and a typical threshold voltage VGS(th) suitable for 5V/10V gate drive. The PG-SOT223-4 package provides a thermal pad tab (pin 4) that doubles as the drain connection, enabling direct heat extraction through PCB copper. The AEC-Q101 qualification plus RoHS and Pb-free plating make this part suited to in-cabin and body-electronics automotive modules. Typical applications include automotive relay replacements, lamp drivers, high-side switches for 12V/24V vehicle body controllers, level shifters in industrial control, and small-signal switching in battery management modules. The high BVDSS of 600V also enables use in offline auxiliary supplies where the device sits on the secondary side. When designing with BSP125H6433XTMA1, route the tab land pattern as the primary thermal path; expect roughly 80-100 C/W RthJA on a 1 square-inch 2oz copper pour. Use a gate-source resistor of 10k-100k to keep the device off during power-up. Source and load should share a small gate series resistor (10-100 ohm) to damp ringing in fast switching edges.
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
The Infineon BSP129H6327XTSA1 is a 240 V N-channel depletion-mode power MOSFET rated at 350 mA continuous drain current and 4.2 ohm maximum on-resistance, housed in a 4-pin (3+Tab) PG-SOT223-4 surface-mount package. It belongs to Infineon's SIPMOS small-power transistor family and is qualified to AEC-Q101, making it suitable for both industrial and automotive environments. The depletion-mode behavior is unusual among small-signal MOSFETs and is essential in constant-current source, active-load, and high-side startup circuits where the device must conduct when VGS = 0. A depletion-mode MOSFET is a field-effect transistor in which the conducting channel is physically present at fabrication and is narrowed by applying a reverse gate-source bias; removing the bias or applying a forward bias widens the channel. This is the opposite of an enhancement-mode MOSFET, which requires a gate bias to create the channel. Depletion-mode devices therefore act as normally-on switches and are commonly used where fail-safe conduction is required or where a bias-free current path must be maintained. The BSP129 sits inside the broader taxonomy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor device. Its key synonyms in design documents are "normally-on N-MOSFET" and "depletion-mode small-signal transistor." Key features include a 240 V drain-source breakdown voltage, 350 mA continuous ID at TA = 25 C, a maximum on-resistance of 4.2 ohm (some sources list 6 ohm), 1.8 W power dissipation at TA, dv/dt ruggedness, and AEC-Q101 automotive qualification. The 4-pin SOT-223 package provides a thermal pad that doubles as the drain terminal, enabling direct PCB copper heatsinking. Technically, the BSP129 uses Infineon's vertical SIPMOS process, which delivers high breakdown voltage in a small die area. The depletion-mode construction is implemented through precise channel doping rather than gate-oxide engineering, giving the device its characteristic negative-VGS(off) threshold. Because the channel is present at zero bias, designers must consider that the device will conduct in a power-down state if used as a low-side switch. Typical applications include active loads and constant-current sources in linear power supplies, high-side startup bypass paths, automotive ECU bias circuits, e-fuse pre-charge stages, and bias generators for gate-driver ICs. The AEC-Q101 qualification broadens its use into automotive body and lighting modules. Designers should treat the thermal tab (pin 4) as the drain and tie it to a copper pour sized for the expected dissipation. When using the BSP129 as a constant-current source, place the source resistor close to the source pin and add a gate-source resistor to set the operating point; the negative threshold means a small positive VGS can fully enhance the channel and lower RDS(on). This page synthesizes distributor stock and pricing data, drop-in same-package alternatives, and practical bias-circuit design notes that go beyond the manufacturer datasheet narrative.
BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon
The Infineon BSP129H6906XTSA1 is an N-channel depletion-mode MOSFET rated at 240 V VDS, 350 mA continuous drain current (Ta), and 1.8 W power dissipation, packaged in a surface-mount PG-SOT223-4 (SOT-223-3 functional, 4-lead) outline. As a depletion-mode device, the channel is normally ON at VGS = 0 V and is pinched off by applying a sufficiently negative gate-source voltage, making it a true normally-on switch. The maximum on-resistance is 6 Ohms at the rated conditions. A depletion-mode MOSFET (also written depletion MOSFET or D-MOSFET) is a field-effect transistor whose conducting channel exists at zero gate-source bias. Unlike an enhancement-mode MOSFET — the workhorse of switching power supplies where the device must be turned ON by VGS > Vth — a depletion-mode part conducts at VGS = 0 V and is turned OFF by pulling VGS below its negative pinch-off voltage. This unusual characteristic places D-MOSFETs in the broader category of power MOSFETs, which descend from discrete transistors and are used in power management, protection, and analog signal-conditioning sub-circuits. Key features of the BSP129 include 240 V drain-source blocking voltage, 350 mA continuous drain current rating at 25 C ambient, 6 Ohm maximum on-resistance, a depletion-mode normally-on threshold, and integrated gate-source protection Zener diodes for ESD robustness. The PG-SOT223-4 (SOT-223) package provides a drain tab that doubles as a low thermal resistance path to PCB copper, supporting 1.8 W dissipation at TA = 25 C with proper layout. The depletion-mode architecture enables constant-current sources when biased with a source resistor, high-side switches that default to ON during power-up sequencing, and simple active loads. Infineon's vertical DMOS process delivers a robust 240 V rating in the small SOT-223 outline, which is rare for normally-on MOSFETs. Typical applications include power-supply startup power, over-voltage protection clamps, inrush-current limiters, off-line voltage references, constant-current sources, and fail-safe high-side switches. The normally-on behavior is intentionally exploited in these circuits. When designing with the BSP129, bias the gate at 0 V for full conduction, or pull it below the pinch-off voltage (about -2.5 V to -3.5 V typical) to turn the device off. A simple resistor divider from a low-voltage rail generates the negative gate bias in most reference designs. Thermal management requires a copper pour on the drain tab footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor listing.
BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon
The Infineon BSP135H6327XTSA1 is a single N-channel depletion-mode small-signal power MOSFET rated for 600 V drain-source voltage, 120 mA continuous drain current, and 1.8 W power dissipation, housed in the industry-standard PG-SOT223-4 surface-mount package with an integrated tab for thermal relief. As a depletion-mode device, the BSP135H6327XTSA1 is normally ON at zero gate-source voltage (VGS = 0 V), allowing it to pass current without a gate drive signal and conduct until a sufficiently negative VGS is applied to pinch off the channel. According to Infineon's product brief, VDS max is 600 V, RDS(on) max is 45 ohm at VGS = 0 V, and ID max is 0.12 A. The SIPMOS (Siemens/Infineon Power MOS) process technology used in the BSP135H6327XTSA1 delivers a robust vertical DMOS structure that handles high off-state blocking voltage in a small outline package. A depletion-mode MOSFET is a special class of field-effect transistor that, unlike the far more common enhancement-mode MOSFET, conducts drain current when VGS = 0 V because the conducting channel exists by default at fabrication. To turn the device OFF, the gate must be pulled below the source by a voltage more negative than the pinch-off voltage (VGS(off)). This behavior places depletion-mode MOSFETs in the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> active semiconductor. They are commonly used as constant-current sources, high-side pass elements in linear regulators, and high-voltage analog switches. Key features of the BSP135H6327XTSA1 include the 600 V VDS rating for offline and 230/400 V mains-coupled applications, a low typical on-resistance in the tens-of-ohms range suited to small-signal switching, and a built-in tab on the SOT-223 package that allows the PCB copper pour to act as a heatsink for the 1.8 W power budget. The depletion-mode normally-ON characteristic eliminates the need for a gate drive bootstrap supply during startup, simplifying high-voltage startup circuits and active discharge paths. The BSP135H6327XTSA1 utilizes Infineon's SIPMOS planar DMOS process with a vertical current flow structure. The die is rated for avalanche energy and is designed to survive the inductive switching transients typical of offline flyback and buck-derived power supplies. The large VDS safety margin (600 V for 230 VAC rectified 325 V buses) provides comfortable derating margin for industrial designs. Typical applications for the BSP135H6327XTSA1 include high-voltage startup circuits in AC-DC flyback converters, constant-current biasing for instrumentation, active discharge circuits in solar inverters, and overvoltage protection clamps. The depletion-mode behavior makes it uniquely suited to circuits that must remain ON until deliberately switched OFF. When designing with the BSP135H6327XTSA1, ensure the gate is biased to a defined potential at all times - an open-gate depletion-mode device will conduct. Use a pull-down resistor from gate to source to define the OFF state and prevent unwanted turn-on in noisy environments. This page synthesizes distributor stock, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon
The Infineon BSP135H6906XTSA1 is an N-channel depletion-mode power MOSFET rated at 600 V drain-to-source voltage and 120 mA continuous drain current, packaged in a 4-pin (3+tab) SOT-223 surface-mount outline with 1.8 W maximum power dissipation. It is one of the few depletion-mode MOSFETs still in volume production and uses Infineon's SIPMOS technology to deliver normally-on operation without a gate drive, simplifying high-side startup, constant-current biasing, and active clamp circuits. A depletion-mode MOSFET is a field-effect transistor that conducts at zero gate-source voltage because the channel is physically doped to be conductive by default. Applying a negative VGS (for an N-channel device) depletes carriers and pinches the channel off. This is the opposite polarity of the enhancement-mode MOSFETs (NMOS/PMOS) that dominate digital logic, where VGS must exceed a threshold to turn the device on. Depletion parts therefore need no driver, no charge pump, and no bootstrap, and they remain on during power supply startup before any controller IC is alive - which is precisely why they are used as bypass, startup, and reference elements. Key features include a maximum drain-source voltage (VDS) of 600 V, a continuous drain current (ID) of 120 mA at TA=25 C, a maximum on-resistance (RDS(on)) of 45 Ohm at VGS=0 V, and a 1.8 W power rating in the compact SOT-223 (PG-SOT223-4) package with a tab that acts as the drain. The depletion-mode behavior gives it a normally-on characteristic so it can be used as a constant-current source when combined with a source resistor, or as an automatic bypass switch that turns off only when gate bias is applied. The device is built on Infineon's planar SIPMOS process, which is optimized for high-voltage switching and analog depletion operation. Its RDS(on) versus VGS curve is monotonic, allowing analog regulation rather than the binary on/off behavior of standard enhancement MOSFETs. This makes the BSP135 well suited to circuits where predictable analog current is needed without closed-loop control. Typical applications include offline startup bypass in switched-mode power supplies, over-voltage protection clamps, in-rush current limiters, active dummy loads, and offline voltage references. Automotive-grade variants exist with AEC-Q101 qualification, supporting 12 V and 24 V body electronics as well as industrial auxiliary supplies. When designing with the BSP135, remember that it is normally-on: the circuit must tolerate continuous conduction when the system is unpowered, and the gate must be actively pulled below VGS(off) (about -1.5 V to -3.5 V for this part) to switch it off. A simple Zener-resistor network can derive the negative gate bias from the drain. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical depletion-mode design notes that the manufacturer datasheet alone does not provide.
BSP149H6327XTSA1 - 200V N-Ch Depletion-Mode MOSFET | Infineon
The Infineon BSP149H6327XTSA1 is an N-channel depletion-mode Power MOSFET rated at 200 V drain-source voltage and 660 mA continuous drain current in a PG-SOT223-4 surface-mount package. It uses Infineon's SIPMOS technology and is qualified to 1.8 W power dissipation at Ta = 25 C with an on-resistance (RDS(on)) of approximately 1 ohm at the rated gate bias. The depletion-mode characteristic means the device is normally ON at zero gate-source voltage and turns OFF when a sufficiently negative VGS is applied, which is the opposite convention from standard enhancement-mode MOSFETs. Key features include 200 V VDS rating, 660 mA ID continuous, 1.8 W power dissipation, low on-resistance of 1 ohm typical, and integrated gate protection. Because it is a depletion-mode device, it requires a negative gate bias to switch off; this makes it useful in constant-current sources, analog signal switches, and active loads where normally-off behavior cannot be assumed. Designers must apply a VGS of approximately -2.5 V or lower to fully turn the device off, while VGS = 0 V leaves the channel fully open with ID limited only by the load and the on-resistance. Architecturally, the BSP149H6327XTSA1 uses a vertical SIPMOS (Siemens Power MOS) structure with the source, gate, and drain brought out to separate pins, with the tab functioning as the drain connection to maximize thermal conduction to the PCB. The PG-SOT223-4 footprint is one of the most widely used SOT-223 outlines and allows straightforward replacement with both SOT-223-3 and SOT-223-4 variants as long as the pinout matches. Typical applications include constant-current sources, active loads, normally-on power switches, analog multiplexer and signal routing, automotive 12 V/24 V load management (where the depletion-mode behavior simplifies fail-safe circuit design), and solid-state relay front-ends. In audio circuits, depletion-mode devices are occasionally used in source-follower configurations for current sources where the gate can be biased to set ID. A key design consideration is gate-source bias: the gate cannot be left floating, or the device will remain ON. A pull-down or active bias network is required to guarantee a defined off-state. Designers should also respect the safe operating area (SOA) at higher VDS, especially during inductive load switching where avalanche energy must be considered. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that go beyond the datasheet, helping engineers select the right Infineon part for depletion-mode analog and switching applications.
BSP171IATMA1 - P-CH 60V 1.9A SOT-223 MOSFET | Infineon
The Infineon BSP171IATMA1 is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and 1.9 A continuous drain current (Ta), qualified for small-signal and general-purpose switching. The device is housed in a PG-SOT223-4-U01 surface-mount package (3 + tab pinout) and dissipates 1.8 W at TA=25 C, rising to 5 W with 25 C/W thermal management to the tab. The -60 V rating makes it suitable for 24 V industrial buses, USB power-path load switches, and reverse-polarity protection circuits. A P-channel MOSFET (P-FET) is a type of field-effect transistor in which the channel is doped to conduct via holes rather than electrons. P-FETs simplify high-side switching because the gate can be driven relative to ground (no charge pump needed for basic on/off), making them the standard choice for load switches and power-ORing in battery-powered and 12 V/24 V systems. Within the broader hierarchy, P-FETs sit under MOSFETs -> transistors -> discrete semiconductors -> active components. Key features include a low threshold voltage for direct 3.3 V/5 V logic-level gate drive, low on-state resistance per unit area for a SOT-223 footprint, and a thermally efficient tab pin that doubles as a heat-spreader for surface-mount assembly. The 4-pin SOT-223 (3 source/drain pins + tab tied to drain) provides a Kelvin-friendly land pattern with low parasitic source inductance. The BSP171IATMA1 uses Infineon's SIPMOS small-signal process, an industry-proven planar P-channel technology optimized for low gate charge and robust avalanche energy. The combination of -60 V VDS and modest gate charge Qg supports PWM frequencies above 100 kHz in compact DC-DC and motor-driver designs. Typical applications include load switching in USB Type-C power delivery, high-side switches for industrial sensor rails, reverse-battery protection in 12 V/24 V systems, motor-driver H-bridges, and battery management charge/discharge paths. Designers also use it for level shifting and power-ORing between redundant supplies. When designing with this device, gate-drive resistor selection (typ. 100 ohm) and gate-source pull-down (typ. 100 kohm) prevent unwanted turn-on during supply transients. The SOT-223 tab must be soldered to a copper pad of at least 50 mm^2 to stay within the 1.8 W Ta rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon
The Infineon BSP295H6327XTSA1 is an N-channel enhancement-mode power MOSFET rated at 60 V drain-source voltage and 1.8 A continuous drain current (Ta), housed in a surface-mount PG-SOT223-4 (3 leads + tab) package. It dissipates 1.8 W at Ta=25 °C on the recommended 40×40×1.5 mm FR4 test PCB and is qualified to AEC-Q101 for automotive use. The suffix "H6327" denotes a 7-inch tape-and-reel packing code; the underlying die is the BSP295 family small-signal/small-power MOSFET. What is a small-signal N-channel MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an insulated gate to modulate current flow between drain and source. Small-signal/small-power MOSFETs sit in the discrete semiconductor hierarchy between digital transistors (used for logic-level switching) and high-power MOSFETs (used in motor drives and converters). The N-channel variant conducts when the gate is pulled above the source by the threshold voltage, offering low on-resistance and fast switching for loads up to a few amps. Key features of the BSP295 include a maximum drain-source on-resistance RDS(on) of 300 mΩ, a logic-compatible gate threshold suitable for 4 V drive, and a single N-channel construction optimized for low-side switching. The SOT-223 package provides a drain-tab thermal pad that, when soldered to sufficient copper area, yields a junction-to-ambient thermal resistance suitable for the 1.8 W dissipation class. The device is built on Infineon's planar cell process and qualified to AEC-Q101, making it suitable for load switching, level shifting, and DC-DC conversion in 12 V and 24 V automotive environments. Compared to bipolar transistors, it requires only a small gate charge for switching, reducing driver losses in PWM applications. Typical applications include automotive relay replacement, LED driver low-side switches, high-side/Low-side buck converter switches in DC-DC modules, and general-purpose power management. The 60 V rating provides margin above 12 V and 24 V automotive transients. When designing with this part, observe the SOA curve at high drain currents, since the 300 mΩ RDS(on) produces roughly 1 W at 1.8 A. Provide at least 6 cm² of copper on the drain tab for the rated 1.8 W dissipation, and add a gate-series resistor of 10-100 Ω to damp ringing. This page synthesizes distributor pricing, drop-in equivalents in the same SOT-223 footprint, and practical design notes not assembled on any single distributor page.