BSZ018NE2LSIATMA1 vs IAUC90N10S5N062ATMA1 比較
詳細な並列比較: BSZ018NE2LSIATMA1 メーカー: Infineon および IAUC90N10S5N062ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ 生産中仕様比較
| パラメータ | BSZ018NE2LSIATMA1 | IAUC90N10S5N062ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.39 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 90 A |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| 動作温度範囲 | -55 C to +150 C | — |
| パッケージ | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-34 (TDSON-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | Trench MOSFET (OptiMOS 5, Generation 5) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | Yes |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Maximum On-Resistance RDS(on) max at VGS=10V | — | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | — | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | — | 115 W |
| 動作接合温度 | — | -55 C to +175 C |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / Green Product | — | Yes (RoHS compliant, Green Product) |