BSZ018NE2LSIATMA1 vs IAUC90N10S5N062ATMA1 비교
다음의 상세 나란히 비교: BSZ018NE2LSIATMA1 제조: Infineon 및 IAUC90N10S5N062ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ 활성사양 비교
| 파라미터 | BSZ018NE2LSIATMA1 | IAUC90N10S5N062ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.39 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 90 A |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| 동작 온도 범위 | -55 C to +150 C | — |
| 패키지 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-34 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | Trench MOSFET (OptiMOS 5, Generation 5) |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | Yes |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Maximum On-Resistance RDS(on) max at VGS=10V | — | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | — | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | — | 115 W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / Green Product | — | Yes (RoHS compliant, Green Product) |