IPB027N10N3GATMA1 vs IPP100N12S305AKSA1 比較
詳細な並列比較: IPB027N10N3GATMA1 メーカー: Infineon および IPP100N12S305AKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ 生産中仕様比較
| パラメータ | IPB027N10N3GATMA1 | IPP100N12S305AKSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.62 | $2.05 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS trench |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| 動作温度範囲 | -55°C to +175°C (TJ) | — |
| パッケージ | PG-TO263-3 (D2PAK) | TO-220 (PG-TO220-3-1) |
| 実装タイプ | Surface Mount | Through Hole |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS ステータス | Compliant | — |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| パルスドレイン電流 | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| 動作接合温度 | — | -55 °C to +175 °C |
| ピン数 | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |