IPD35N10S3L26ATMA1 vs IPD35N10S3L26ATMA2 比較
詳細な並列比較: IPD35N10S3L26ATMA1 メーカー: Infineon および IPD35N10S3L26ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD35N10S3L26ATMA1 | IPD35N10S3L26ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.81 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | Trench MOSFET (OptiMOS-T) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| 動作接合温度 | -55°C to +175°C | — |
| パッケージ | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Product Family | — | OptiMOS-T |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| 動作温度範囲 | — | [DATA_NEEDED: Tj min/max] |
| ピン数 | — | 3 (Drain, Source, Gate + tab) |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |