IPP60R180P7XKSA1 vs IPL60R105P7AUMA1 比較
詳細な並列比較: IPP60R180P7XKSA1 メーカー: Infineon および IPL60R105P7AUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 生産中仕様比較
| パラメータ | IPP60R180P7XKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.30 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| 動作温度範囲 | -55 °C to +150 °C | -55C to +150C |
| パッケージ | PG-TO220-3 (through-hole) | PG-VSON-4 (4-pin SMD with exposed pad) |
| 実装タイプ | Through Hole | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSLレベル | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| ハロゲンフリー | — | Yes |