IPP60R180P7XKSA1 vs IPL60R105P7AUMA1 비교
다음의 상세 나란히 비교: IPP60R180P7XKSA1 제조: Infineon 및 IPL60R105P7AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPP60R180P7XKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.30 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| 동작 온도 범위 | -55 °C to +150 °C | -55C to +150C |
| 패키지 | PG-TO220-3 (through-hole) | PG-VSON-4 (4-pin SMD with exposed pad) |
| 실장 유형 | Through Hole | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 레벨 | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| 할로겐 프리 | — | Yes |