IPT022N10NF2SATMA1 vs IRFS4227TRLPBF 比較
詳細な並列比較: IPT022N10NF2SATMA1 メーカー: Infineon および IRFS4227TRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPT022N10NF2SATMA1 | IRFS4227TRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.99 | $2.38 |
| Manufacturer | Infineon Technologies | — |
| Product Family | StrongIRFET 2 | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| パッケージ | PG-HSOF-8-10 (8 leads + tab) | D2PAK (TO-263), surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | HEXFET, IR MOSFET |
| 動作温度範囲 | -55C to +175C | -40C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 70 nC |
| RoHS ステータス | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) @ Tc = 25C | — | 62 A |
| Maximum Power Dissipation (PD) @ Tc = 25C | — | 330 W |
| On-Resistance RDS(on) max @ VGS = 10V | — | 26 mOhm |
| Gate-to-Source Voltage (VGS) max | — | ±30 V |
| Configuration | — | Single with built-in diode |
| Case Connection | — | DRAIN |
| MSLレベル | — | 1 (unlimited) |
| Key Application | — | PDP Sustain / Energy Recovery Switch |