IPT022N10NF2SATMA1 vs IRFS4227TRLPBF 对比
详细并排对比 IPT022N10NF2SATMA1 出自 Infineon 和 IRFS4227TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT022N10NF2SATMA1 | IRFS4227TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.99 | $2.38 |
| Manufacturer | Infineon Technologies | — |
| Product Family | StrongIRFET 2 | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| 封装 | PG-HSOF-8-10 (8 leads + tab) | D2PAK (TO-263), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | HEXFET, IR MOSFET |
| 工作温度范围 | -55C to +175C | -40C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 70 nC |
| RoHS 状态 | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) @ Tc = 25C | — | 62 A |
| Maximum Power Dissipation (PD) @ Tc = 25C | — | 330 W |
| On-Resistance RDS(on) max @ VGS = 10V | — | 26 mOhm |
| Gate-to-Source Voltage (VGS) max | — | ±30 V |
| Configuration | — | Single with built-in diode |
| Case Connection | — | DRAIN |
| MSL 等级 | — | 1 (unlimited) |
| Key Application | — | PDP Sustain / Energy Recovery Switch |