IPT022N10NF2SATMA1 vs IRFS4227TRLPBF Comparison

Detailed side-by-side comparison of IPT022N10NF2SATMA1 by Infineon and IRFS4227TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT022N10NF2SATMA1 IRFS4227TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.99 $2.38
Manufacturer Infineon Technologies β€”
Product Family StrongIRFET 2 β€”
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Drain-Source Voltage (V(BR)DSS) 100 V β€”
Continuous Drain Current (Id) at Ta 29 A β€”
Continuous Drain Current (Id) at Tc 236 A β€”
Typical RDS(on) at VGS=10V 2.2 mΞ© β€”
Power Dissipation at Ta 3.8 W β€”
Power Dissipation at Tc 250 W β€”
Package PG-HSOF-8-10 (8 leads + tab) D2PAK (TO-263), surface mount
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET HEXFET, IR MOSFET
Operating Temperature Range -55C to +175C -40C to +150C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] 70 nC
RoHS Status Compliant Compliant
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) @ Tc = 25C β€” 62 A
Maximum Power Dissipation (PD) @ Tc = 25C β€” 330 W
On-Resistance RDS(on) max @ VGS = 10V β€” 26 mOhm
Gate-to-Source Voltage (VGS) max β€” Β±30 V
Configuration β€” Single with built-in diode
Case Connection β€” DRAIN
MSL Level β€” 1 (unlimited)
Key Application β€” PDP Sustain / Energy Recovery Switch

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