IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 比較
詳細な並列比較: IQD020N10NM5CGATMA1 メーカー: Infineon および IQEH68NE2LM7UCGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQD020N10NM5CGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.28 | $1.35 |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| 動作温度範囲 | -55°C to +175°C | -55 °C to +175 °C (typical for OptiMOS 7) |
| パッケージ | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (surface mount) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL rating from datasheet] | [DATA_NEEDED: MSL Level] |
| RoHS ステータス | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |