IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 비교
다음의 상세 나란히 비교: IQD020N10NM5CGATMA1 제조: Infineon 및 IQEH68NE2LM7UCGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IQD020N10NM5CGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.28 | $1.35 |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| 동작 온도 범위 | -55°C to +175°C | -55 °C to +175 °C (typical for OptiMOS 7) |
| 패키지 | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL rating from datasheet] | [DATA_NEEDED: MSL Level] |
| RoHS 상태 | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |