IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 Comparison
Detailed side-by-side comparison of IQD020N10NM5CGATMA1 by Infineon and IQEH68NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD020N10NM5CGATMA1
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ ActiveInfineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQD020N10NM5CGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $1.35 |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| Operating Temperature Range | -55°C to +175°C | -55 °C to +175 °C (typical for OptiMOS 7) |
| Package | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating from datasheet] | [DATA_NEEDED: MSL Level] |
| RoHS Status | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |