IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of IQD020N10NM5CGATMA1 by Infineon and IQEH68NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ Active

Specification Comparison

Parameter IQD020N10NM5CGATMA1 IQEH68NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 100 V 25 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Operating Temperature Range -55°C to +175°C -55 °C to +175 °C (typical for OptiMOS 7)
Package PG-TTFN-9-U02 (PQFN 5x6 mm²) PG-TTFN-9-3 (surface mount)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating from datasheet] [DATA_NEEDED: MSL Level]
RoHS Status Compliant Compliant (per distributor listing)
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature — 175 °C
Packaging — Tape & Reel (per ATMA1 suffix)

Datasheets & Resources

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