IRF5305STRLPBF vs IRFS4010TRLPBF 比較
詳細な並列比較: IRF5305STRLPBF メーカー: Infineon および IRFS4010TRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF5305STRLPBF | IRFS4010TRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $0.86 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | 180 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 143 nC |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| パッケージ | TO-263 / D2PAK (surface mount) | D2PAK (TO-263AB), surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | [DATA_NEEDED: Tj max / operating range] | — |
| Technology | HEXFET (fifth generation), IR MOSFET | IR MOSFET (HEXFET) |
| Packaging | Tape & Reel (TR), 800 pcs per reel | — |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | — | Plus or minus 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD) at TC=25C | — | 375 W |
| 動作接合温度 | — | -55C to +175C |
| Gate Drive Voltage | — | 10 V (normal level, optimized) |
| RoHS ステータス | — | Compliant |
| MSLレベル | — | 1 |
| Qualification | — | JEDEC standard |